Memristor based on fiber substrate and preparation method of memristor

A fiber substrate and memristor technology, applied in electrical components and other directions, can solve the problems of high cost and inflexibility, and achieve the effects of low cost, easy extraction and light weight

Active Publication Date: 2015-12-16
CENT SOUTH UNIV
5 Cites 8 Cited by

AI-Extracted Technical Summary

Problems solved by technology

[0007] In view of the disadvantages of memristor devices in the prior art, such as inflexibility and high cost, which lead to limitations in its application, the ...
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Abstract

The invention discloses a memristor based on a fiber substrate and a preparation method of the memristor. The memristor sequentially comprises a flexible fiber substrate I, an isolation layer I, an upper electrode, a storage dielectric layer thin film, a lower electrode, an isolation layer II and a flexible fiber substrate II from top to bottom. The preparation method of the memristor comprises the following steps of sequentially depositing the isolation layer I and the upper electrode on the surface of the flexible fiber substrate I to denote as a part A; sequentially depositing the isolation layer II, the lower electrode and the storage dielectric layer thin film on the surface of the flexible fiber substrate II to denote as a part B; and allowing the part A and the part B to contact at an arbitrary angle, and forming the memristor at a contact position. The memristor has the characteristics of favorable flexibility and light weight, can be bent, and is beneficial for promoting light-weight development of an electronic product; and the preparation method is compatible with the traditional complementary metal oxide semiconductor transistor (CMOS) process, is simple, is low in cost and high in production efficiency and has industrial value, and the demand for production at a large scale is met.

Application Domain

Technology Topic

Oxide semiconductorFlexible fiber +6

Image

  • Memristor based on fiber substrate and preparation method of memristor
  • Memristor based on fiber substrate and preparation method of memristor
  • Memristor based on fiber substrate and preparation method of memristor

Examples

  • Experimental program(4)

Example Embodiment

[0049] The process steps of the preparation process of the memristor of the present invention are as follows:
[0050] Step 1: Use fiber 1 as flexible substrate I and fiber 4 as flexible substrate II;
[0051] Step 2: Sputter a layer of Ta on the substrate I first, because Ta absorbs the natural oxides at the part of the contact, reducing the contact resistance, thereby improving the adhesion to the electrode. Nitrogen was introduced while sputtering Ta, the process parameters were well controlled, and a TaN film with a thickness of about 100nm was generated;
[0052] Step 3: Take the same method as step 2 to generate a TaN film with a thickness of about 100 nm on the substrate II;
[0053] Step 4: Use any of epitaxy, chemical vapor deposition, electron beam evaporation, pulsed laser deposition, atomic layer deposition or magnetron sputtering on the TaN film (isolation layer I) of the substrate I on the isolation layer. A conductive film with a thickness of 50 nm to 800 nm is deposited on the upper electrode, and the upper electrode is formed after cleaning; the part A is obtained.
[0054] Step 5: Use any one of epitaxy, chemical vapor deposition, electron beam evaporation, pulsed laser deposition, atomic layer deposition or magnetron sputtering on the TaN film on the substrate II (isolation layer II) on the TaN film Deposit a thin film with a thickness of 50 nm to 800 nm, and form the bottom electrode after cleaning;
[0055] Step 6: Use any one of electroplating, epitaxy, electron beam evaporation, pulsed laser deposition, magnetron sputtering method or sol-gel method on the bottom electrode to deposit a thickness of 50nm~500nm on the bottom electrode The thin film, that is, the storage medium layer is formed, and the part B is obtained.
[0056] Step 7: Contact part A and part B at any angle to form a memristor at the contact.
[0057] Step 8: Except the two ends of the fiber substrate II, all other areas are coated with a layer of photoresist, and the storage medium layer at both ends of the fiber substrate II is etched through the corresponding photolithography technology, and then a specific solvent is used to The photoresist is dissolved away, making the lower electrode protrude as an electrode lead. This completes the basic structure of the entire device.

Example Embodiment

[0058] Example 1
[0059] Fiber 1 and fiber 4 are both carbon fibers; the upper electrode material is Pt with a thickness of 200 nm; the lower electrode material is an Ag film with a thickness of 400 nm; the storage medium layer is NiO with a thickness of 200 nm.

Example Embodiment

[0060] Example 2
[0061] Fiber 1 and fiber 4 are both glass fibers; the upper electrode material is Cu with a thickness of 800 nm; the lower electrode material is W with a thickness of 50 nm; the storage medium layer is Dy 2 O 3 , The thickness is 50nm;
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PUM

PropertyMeasurementUnit
Thickness20.0 ~ 800.0nm
Thickness60.0 ~ 800.0nm
Thickness10.0 ~ 1000.0nm
tensileMPa
Particle sizePa
strength10

Description & Claims & Application Information

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