Memristor based on fiber substrate and preparation method of memristor

The invention discloses a memristor based on a fiber substrate and a preparation method of the memristor. The memristor sequentially comprises a flexible fiber substrate I, an isolation layer I, an upper electrode, a storage dielectric layer thin film, a lower electrode, an isolation layer II and a flexible fiber substrate II from top to bottom. The preparation method of the memristor comprises the following steps of sequentially depositing the isolation layer I and the upper electrode on the surface of the flexible fiber substrate I to denote as a part A; sequentially depositing the isolation layer II, the lower electrode and the storage dielectric layer thin film on the surface of the flexible fiber substrate II to denote as a part B; and allowing the part A and the part B to contact at an arbitrary angle, and forming the memristor at a contact position. The memristor has the characteristics of favorable flexibility and light weight, can be bent, and is beneficial for promoting light-weight development of an electronic product; and the preparation method is compatible with the traditional complementary metal oxide semiconductor transistor (CMOS) process, is simple, is low in cost and high in production efficiency and has industrial value, and the demand for production at a large scale is met.