Memristor based on fiber substrate and preparation method of memristor
A fiber substrate and memristor technology, applied in electrical components and other directions, can solve the problems of high cost and inflexibility, and achieve the effects of low cost, easy extraction and light weight
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[0049] The process steps of the preparation process of the memristor of the present invention are as follows:
[0050] Step 1: Use fiber 1 as flexible substrate I and fiber 4 as flexible substrate II;
[0051] Step 2: Sputter a layer of Ta on the substrate I first, because Ta absorbs the natural oxides at the part of the contact, reducing the contact resistance, thereby improving the adhesion to the electrode. Nitrogen was introduced while sputtering Ta, the process parameters were well controlled, and a TaN film with a thickness of about 100nm was generated;
[0052] Step 3: Take the same method as step 2 to generate a TaN film with a thickness of about 100 nm on the substrate II;
[0053] Step 4: Use any of epitaxy, chemical vapor deposition, electron beam evaporation, pulsed laser deposition, atomic layer deposition or magnetron sputtering on the TaN film (isolation layer I) of the substrate I on the isolation layer. A conductive film with a thickness of 50 nm to 800 nm is deposit...
Example Embodiment
[0058] Example 1
[0059] Fiber 1 and fiber 4 are both carbon fibers; the upper electrode material is Pt with a thickness of 200 nm; the lower electrode material is an Ag film with a thickness of 400 nm; the storage medium layer is NiO with a thickness of 200 nm.
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[0060] Example 2
[0061] Fiber 1 and fiber 4 are both glass fibers; the upper electrode material is Cu with a thickness of 800 nm; the lower electrode material is W with a thickness of 50 nm; the storage medium layer is Dy 2 O 3 , The thickness is 50nm;
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