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Bismuth nanohole array thin film and preparation method thereof

A technology of hole array and bismuth nanometer, which is applied in the field of bismuth nanohole array film and its preparation, can solve the problems of failing to reach the Fermi wavelength of the material - 40nm range, the preparation method cannot obtain products, and cannot produce quantum size effects. Achieve the effects of low cost, reasonable membrane structure and simple preparation method

Active Publication Date: 2017-07-28
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, both the bismuth thin film and its preparation method have shortcomings. First, the thickness of the thin film is too thick, and the surface of the thin film does not have large fluctuations, so that the overall shape of the thin film is still macroscopic. It can reach the Fermi wavelength of the material - 40nm range, and then it cannot produce quantum size effect, which makes it difficult to further expand the optimized application in the field of infrared detection, pyroelectric effect and Hall device; secondly, the preparation method cannot obtain smaller size product

Method used

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  • Bismuth nanohole array thin film and preparation method thereof
  • Bismuth nanohole array thin film and preparation method thereof
  • Bismuth nanohole array thin film and preparation method thereof

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Embodiment 1

[0036] The specific steps of preparation are:

[0037] Step 1. Place the aluminum sheet in a 0.4mol / L oxalic acid solution at 3°C, and after anodizing at 30V DC voltage for 14 hours, place it in a phosphochromic acid solution at 58°C for 28 hours to obtain an aluminum oxide sheet . After the aluminum oxide sheet was placed again under the same conditions for anodization for 10 hours, the unoxidized aluminum on the back of the aluminum oxide sheet was removed with a tin chloride solution to obtain an aluminum oxide template. Among them, after each anodic oxidation, the alumina flakes were soaked in deionized water for 24 hours, and then rinsed and dried.

[0038] Step 2: Put the alumina template in deionized water for 12 hours, and then dry it. After that, the dried alumina template was first placed in a 6wt% phosphoric acid solution at 28°C to remove the barrier layer, and then placed again under the same conditions to expand the hole for 58 minutes to obtain an approximate figur...

Embodiment 2

[0041] The specific steps of preparation are:

[0042] Step 1. Place the aluminum sheet in a 0.35mol / L oxalic acid solution at 4°C. After anodizing for 13h at a DC voltage of 38V, place it in a phosphochromic acid solution at 59°C for 27h to obtain an alumina sheet . After the aluminum oxide sheet was again anodized under the same conditions for 11 hours, the unoxidized aluminum on the back of the aluminum oxide sheet was removed with a tin chloride solution to obtain an aluminum oxide template. Among them, after each anodic oxidation, the alumina flakes were soaked in deionized water for 24 hours, and then rinsed and dried.

[0043] Step 2: Put the alumina template in deionized water for 12 hours, and then dry it. After that, the dried alumina template was first placed in a 5.5wt% phosphoric acid solution at 29°C to remove the barrier layer, and then placed again under the same conditions to expand the hole for 59 minutes to obtain an approximate figure 1 The through-hole alumin...

Embodiment 3

[0046] The specific steps of preparation are:

[0047] Step 1. Place the aluminum sheet in a 0.3mol / L oxalic acid solution at 5°C, and after anodizing at a direct current of 45V for 12 hours, place it in a phosphochromic acid solution at 60°C for 26 hours to obtain an aluminum oxide sheet . After the aluminum oxide sheet was again anodized under the same conditions for 12 hours, the unoxidized aluminum on the back of the aluminum oxide sheet was removed with a tin chloride solution to obtain an aluminum oxide template. Among them, after each anodic oxidation, the alumina flakes were soaked in deionized water for 24 hours, and then rinsed and dried.

[0048] Step 2: Put the alumina template in deionized water for 12 hours, and then dry it. After that, the dried alumina template was placed in a 5 wt% phosphoric acid solution at 30°C to remove the barrier layer, and then placed again under the same conditions to expand the hole for 60 minutes to obtain figure 1 The through-hole alum...

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Abstract

The invention discloses a bismuth nanohole array film and a preparation method thereof. The thickness of the film is 25-50nm, on which there is an array of holes arranged in a hexagonal order, the diameter of the holes constituting the hole array is 30-100nm, the distance between the centers of the holes is 80-150nm, and the wall thickness of the holes is ≥10nm. The method is to first use the secondary anodic oxidation method on the aluminum sheet to remove the unoxidized aluminum on the back, remove the barrier layer and expand the holes to obtain a through-hole alumina template, and then place the through-hole alumina template in an electron beam evaporation equipment to evaporate Coating a bismuth film to obtain a through-hole alumina template with a bismuth nanohole array film attached to it. After that, the thermal release tape is first adhered to the bismuth nanohole array film of the through-hole alumina template, and the bismuth is separated by physical methods. The nanohole array film and the through-hole alumina template, and then the bismuth nanohole array film attached to the thermal release tape is placed at ≥80° C. for at least 2 minutes to obtain the target product. It can further expand the optimized application in the field of infrared detection, pyroelectric effect and Hall device.

Description

Technical field [0001] The invention relates to a bismuth film and a preparation method thereof, in particular to a bismuth nanohole array film and a preparation method thereof. Background technique [0002] Due to the small size of nanomaterials, it exhibits some special properties that are different from those of macroscopic materials; it has attracted much attention since it was prepared, and it has been widely used in magnetic recording, sensors, and so on. In nanomaterials, due to the size effect, their mechanical, thermal, electrical, magnetic, optical and chemical properties will undergo significant changes, which are mainly reflected in the surface and interface effects, volume effects, quantum size effects and macroscopic quantum tunnels. Effects and other aspects. [0003] Photoelectric materials have a wide range of applications, among which infrared photodetection materials have always been a hot research topic and have important applications. Bismuth (Bi) is a semi-m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/30C25D11/10
Inventor 宋豪杰张俊喜费广涛张立德
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI