Silicon graphene core-shell material with gaps and preparation and application of silicon graphene core-shell material
A graphene, graphene layer technology, applied in nanotechnology for materials and surface science, electrical components, electrochemical generators, etc., can solve problems such as insufficient stability and decreased cycle performance
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Embodiment 1
[0084] Preparation of silicon graphene core-shell material, the process is as follows figure 1 .
[0085]1 gram of silicon particle raw material with a diameter of about 100 nanometers is placed in a muffle furnace, the atmosphere is atmospheric, the pressure is 15 psi, and the flow rate is 70 sccm. The heating rate is 20°C / min, the holding temperature is 950°C, and the holding time is 1 minute. After the holding is over, it is naturally cooled to form a sacrificial template on the surface of the silicon particles.
[0086] Place the obtained silicon particles with a sacrificial template in a tube furnace, the heating atmosphere is argon, the pressure is 12.5 psi, the flow rate is 50 sccm, the heating rate is 100 degrees per minute, the holding temperature is 900 degrees, and the holding time is 5 minutes , the heat preservation atmosphere is methane, the pressure is 12.5psi, the flow rate is 100sccm, and then cooled with the furnace, the cooling atmosphere is argon, the pres...
Embodiment 2
[0092] Preparation of silicon material C2
[0093] Same as Example 1, the difference lies in: the holding temperature for forming the sacrificial template is 1100°C.
Embodiment 3
[0095] Preparation of silicon material C3
[0096] Same as Example 1, the difference is that the particle size of the silicon particle raw material is 40nm.
[0097] The materials obtained in Examples 1-3 and Comparative Example 1 were tested by XRD, thermogravimetric, SEM and TEM.
[0098] figure 2 is the XRD pattern of silicon material 1. From figure 2 It can be seen that the silicon material 1 has a high degree of crystallinity, which is 95%, and the main peaks are at 28.44° (111 plane), 47.31° (220 plane), 56.13° (311 plane), 69.14° (400 plane), 76.38° (331 plane), 88.04° (422 plane), basically no other impurity peaks appear. It can be seen that the preparation process of the silicon material 1 does not change the crystal structure of the silicon particle raw material.
[0099] image 3 It is the SEM picture of silicon material 1. It can be seen that the silicon material has a silicon core with a diameter of 100 nm. Outside the silicon core there is a graphene sh...
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