Copper-zinc-tin-sulfide film preparing method based on substrate heating co-sputtering method
A copper-zinc-tin-sulfur, co-sputtering technology, applied in the field of thin-film solar cells, can solve problems such as insufficient copper elements, and achieve the effect of promoting grain growth, large bonding force, and small roughness
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Embodiment 1
[0045] The grain distribution and crystalline quality of CuZnSnS thin films prepared by co-sputtering sequentially with CuZnSnS and Cu targets or Zn targets at a substrate temperature of 200 ℃ were observed.
[0046] (1) Deposit a copper-poor zinc-rich copper-zinc-tin-sulfur preset layer with a thickness of 100 nm on the white light glass substrate 1 treated by standard cleaning process by co-sputtering deposition method of copper-zinc-tin-sulfur target and zinc target The bottom layer 2, and then deposit a copper-zinc-tin-sulfur preset layer main layer 3 with a thickness of 600nm by co-sputtering a copper-zinc-tin-sulfur target and a copper target, and then co-sputter with a copper-zinc-tin-sulfur target and a zinc target The sputtering deposition method deposits a layer of copper-poor zinc-rich copper-zinc-tin-sulfur preset layer top layer 4 with a thickness of 100nm. The above-mentioned sputtering powers are respectively copper-zinc-tin-sulfur target radio frequency 50W, cop...
Embodiment 2
[0050] The effect of different substrate temperatures on the grain size and crystal quality of CuZnSnS thin films prepared by sulfidation after co-sputtering with CuZnSn and Cu targets or Zn targets was observed.
[0051] (1) Deposit a copper-poor zinc-rich copper-zinc-tin-sulfur preset layer with a thickness of 100 nm on the white light glass substrate 1 treated by standard cleaning process by co-sputtering deposition method of copper-zinc-tin-sulfur target and zinc target The bottom layer 2, and then deposit a copper-zinc-tin-sulfur preset layer main layer 3 with a thickness of 600nm by co-sputtering a copper-zinc-tin-sulfur target and a copper target, and then co-sputter with a copper-zinc-tin-sulfur target and a zinc target The top layer 4 of the copper-poor zinc-rich copper-zinc-tin-sulfur preset layer is deposited by sputtering deposition method with a thickness of 100nm. The background vacuum is 6.0×10 -4 Pa, the substrate temperature is maintained at 160° C., the Ar g...
Embodiment 3
[0055] The influence of room temperature and substrate temperature on the crystallization quality of CuZnSnS thin films prepared by sulfidation after co-sputtering with CuZnSnS and Cu targets or Zn targets was observed.
[0056] (1) Deposit a copper-poor zinc-rich copper-zinc-tin-sulfur preset layer with a thickness of 100 nm on the white light glass substrate 1 treated by standard cleaning process by co-sputtering deposition method of copper-zinc-tin-sulfur target and zinc target The bottom layer 2, and then deposit a copper-zinc-tin-sulfur preset layer main layer 3 with a thickness of 600nm by co-sputtering a copper-zinc-tin-sulfur target and a copper target, and then co-sputter with a copper-zinc-tin-sulfur target and a zinc target The top layer 4 of the copper-poor zinc-rich copper-zinc-tin-sulfur preset layer is deposited by sputtering deposition method with a thickness of 100nm. The background vacuum is 6.0×10 -4 Pa, the substrate temperature is room temperature, the Ar...
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