A method for preparing copper-zinc-tin-sulfur thin film by substrate heating co-sputtering method
A copper-zinc-tin-sulfur and co-sputtering technology, which is applied in the field of thin film solar cells, can solve problems such as insufficient copper elements, and achieve the effects of promoting grain growth, strong bonding force, and small roughness
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Embodiment 1
[0045] The grain distribution and crystalline quality of CuZnSnS thin films prepared by co-sputtering sequentially with CuZnSnS and Cu targets or Zn targets at a substrate temperature of 200 ℃ were observed.
[0046] (1) Deposit a copper-poor zinc-rich copper-zinc-tin-sulfur preset layer with a thickness of 100 nm on the white light glass substrate 1 treated by standard cleaning process by co-sputtering deposition method of copper-zinc-tin-sulfur target and zinc target The bottom layer 2, and then deposit a copper-zinc-tin-sulfur preset layer main layer 3 with a thickness of 600nm by co-sputtering a copper-zinc-tin-sulfur target and a copper target, and then co-sputter with a copper-zinc-tin-sulfur target and a zinc target The sputtering deposition method deposits a layer of copper-poor zinc-rich copper-zinc-tin-sulfur preset layer top layer 4 with a thickness of 100nm. The above-mentioned sputtering powers are respectively copper-zinc-tin-sulfur target radio frequency 50W, cop...
Embodiment 2
[0050] The effect of different substrate temperatures on the grain size and crystal quality of CuZnSnS thin films prepared by sulfidation after co-sputtering with CuZnSn and Cu targets or Zn targets was observed.
[0051] (1) Deposit a copper-poor zinc-rich copper-zinc-tin-sulfur preset layer with a thickness of 100 nm on the white light glass substrate 1 treated by standard cleaning process by co-sputtering deposition method of copper-zinc-tin-sulfur target and zinc target The bottom layer 2, and then deposit a copper-zinc-tin-sulfur preset layer main layer 3 with a thickness of 600nm by co-sputtering a copper-zinc-tin-sulfur target and a copper target, and then co-sputter with a copper-zinc-tin-sulfur target and a zinc target The top layer 4 of the copper-poor zinc-rich copper-zinc-tin-sulfur preset layer is deposited by sputtering deposition method with a thickness of 100nm. The background vacuum is 6.0×10 - 4 Pa, the substrate temperature is maintained at 160° C., the Ar...
Embodiment 3
[0055] The influence of room temperature and substrate temperature on the crystallization quality of CuZnSnS thin films prepared by sulfidation after co-sputtering with CuZnSnS and Cu targets or Zn targets was observed.
[0056] (1) Deposit a copper-poor zinc-rich copper-zinc-tin-sulfur preset layer with a thickness of 100 nm on the white light glass substrate 1 treated by standard cleaning process by co-sputtering deposition method of copper-zinc-tin-sulfur target and zinc target The bottom layer 2, and then deposit a copper-zinc-tin-sulfur preset layer main layer 3 with a thickness of 600nm by co-sputtering a copper-zinc-tin-sulfur target and a copper target, and then co-sputter with a copper-zinc-tin-sulfur target and a zinc target The top layer 4 of the copper-poor zinc-rich copper-zinc-tin-sulfur preset layer is deposited by sputtering deposition method with a thickness of 100nm. The background vacuum is 6.0×10 - 4 Pa, the substrate temperature is room temperature, the ...
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