A method for preparing copper-zinc-tin-sulfur thin film by substrate heating co-sputtering method

Abstract

The invention discloses a copper-zinc-tin-sulfide film preparing method based on a substrate heating co-sputtering method. The copper-zinc-tin-sulfide film preparing method comprises the steps that firstly, a pre-arranged three-layer copper-poor and zinc-rich / ideally proportioned / copper-poor and zinc-rich copper-zinc-tin-sulfide film body is deposited on a heated substrate through the co-sputtering method; and secondly, a copper-zinc-tin-sulfide absorption layer is obtained by conducting specific annealing treatment on the pre-arranged film body under the sulfur atmosphere. The copper-zinc-tin-sulfide film preparing method based on the substrate heating co-sputtering method has the advantages that raw materials are abundant and low in cost, the preparing technique is simple, and the components and thickness of the film can be controlled; compared with a traditional method for preparing the copper-zinc-tin-sulfide film through sulfuration after a pre-arranged layer is sputtered, the element distribution uniformity and the grain size uniformity are greatly improved, and the copper-zinc-tin-sulfide film preparing method has great application potential in the technical field of solar cell materials and devices.

Description

technical field [0001] The invention relates to a method for preparing a copper-zinc-tin-sulfur thin film by a co-sputtering method under heating of a substrate, which is applicable to the technical field of thin film solar cells. Background technique [0002] With the continuous depletion of fossil energy, the pursuit of green and renewable energy will be an important part of human life in the future. Solar energy is inexhaustible, inexhaustible, green and non-polluting. It is a representative of renewable energy and has been widely used. After years of development, solar cells can be divided into three generations. The first generation is crystalline silicon solar cells, which were first manufactured by Bell Laboratories in 1954, with an efficiency of about 6%. After years of development, the technology is relatively mature and the conversion efficiency is relatively high. However, due to its low light absorption coefficient, more materials are needed to absorb all sunlig...

AI Technical Summary

Problems solved by technology

[0007] The content of the present invention provides a method for preparing a copper-zinc-tin-sulfur thin film by co-sputtering under substrate heating. To solve the problem of insufficient copper elements in single-target sputtering, co-sputtering of zinc target and copper-zinc-tin-sulfur target is used as the bottom and top layers of the preset layer to control the longitudinal distribution of elements, and induce growth under the condition of substrate heating. The Cu-Zn-Sn-S preset layer with certain crystallinity can be prepared after a certain high-temperature vulcanization process to produce a CZTS film with standard element ratio, controlled element distribution, uniform particle size and no holes. A very promising technology for efficient preparation of excellent CZTS thin films

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