Preparation method of dendritic zinc oxide nanowire array

A technology of zinc oxide nanowires and zinc oxide seed layers is applied in the field of preparation of zinc oxide nanowire arrays, which can solve the problems of poor density of nanowires, poor uniformity of nanowires, damaged device structure, etc., and achieves good repeatability and good repeatability. The effect of uniformity, low preparation temperature

Active Publication Date: 2016-01-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Abstract
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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a method for preparing a dendritic zinc oxide nanowire array, which is used to solve the problem that excessive temperature may damage the device structure in the method for growing a zinc oxide nanowire array (such as metal wires, etc.), poor density of nanowires, poor uniformity of nanowires prepared on uneven surfaces, etc.

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  • Preparation method of dendritic zinc oxide nanowire array
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  • Preparation method of dendritic zinc oxide nanowire array

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[0066] The invention provides a method for preparing a dendritic zinc oxide nanowire array, comprising the following steps:

[0067] 1) cleaning the substrate surface;

[0068] 2) Depositing a zinc oxide seed layer on the surface of the substrate by atomic layer deposition;

[0069] 3) growing zinc oxide nanowire arrays on the substrate by hydrothermal method;

[0070] 4) After cleaning and drying the substrate after completing step 3), a rod-shaped zinc oxide nanowire array is formed;

[0071] 5) Depositing a zinc oxide seed layer on the surface of the substrate after step 4) by using an atomic layer deposition process;

[0072] 6) Steps 3)-4) are repeated to form dendritic zinc oxide nanowire arrays.

Embodiment 1

[0075] The present invention prepares a dendritic zinc oxide nanowire array, specifically comprising the following steps:

[0076] (1) The substrate was ultrasonically washed with acetone, ethanol, and deionized water for 5 minutes, respectively, and dried.

[0077] (2) Use the atomic layer deposition equipment model Kemin EPEALD-S150A, adopt the thermal atomic layer deposition process, and deposit a layer of zinc oxide seed layer with a thickness of 100nm on the substrate surface; the precursors used are diethyl zinc and Water, the substrate temperature during deposition is 150°C, the deposition thickness of each deposition cycle is 0.15nm, and the number of deposition cycles is 667 times.

[0078] (3) Immerse the substrate in the aqueous solution of the precursor of zinc oxide, seal it, and grow the array of zinc oxide nanowires using the hydrothermal method, control the temperature at 90° C., and grow at a constant temperature for 4 hours; The solution is calculated to con...

Embodiment 2

[0084] The present invention prepares a dendritic zinc oxide nanowire array, specifically comprising the following steps:

[0085] (1) Clean the substrate for 1-2 minutes using plasma with a power of 18W, an oxygen flow rate of 50ml / min, and a vacuum degree of 100Pa in the cavity of the plasma machine.

[0086] (2) Using the atomic layer deposition equipment model Kemin EPEALD-S150A, a plasma-enhanced deposition process is used to deposit a 150-nanometer-thick zinc oxide seed layer on the surface of the substrate; the precursors used are diethyl zinc and oxygen , the substrate temperature during deposition is 150°C, the deposition power is 150W, the deposition thickness of each deposition cycle is 0.15nm, and the number of deposition cycles is 1000 times.

[0087] (3) Immerse the substrate in the aqueous solution of the precursor of zinc oxide, seal it, and grow the array of zinc oxide nanowires using the hydrothermal method, control the temperature at 90° C., and grow at a co...

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Abstract

The invention provides a preparation method of a dendritic zinc oxide nanowire array. The preparation method comprises the following steps of (1) cleaning the surface of a substrate; (2) depositing a zinc oxide seed layer at the surface of the substrate by an atom layer depositing technology; (3) growing a zinc oxide nanowire array on the substrate by a hydration method; (4) cleaning the substrate, and drying, so as to form a bar-shaped zinc oxide nanowire array; (5) depositing one zinc oxide seed layer at the surface of the substrate by the atom layer depositing technology; (6) repeating the steps (3) to (4), so as to form the dendritic zinc oxide nanowire array. The preparation method of the dendritic zinc oxide nanowire array has the advantages that the preparation temperature is low, the nanometer dendritic structure has good uniformity and density, the preparation method is suitable for the substrate with a non-plane or complicated structure, and the preparation method is simple and feasible.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterials, and relates to a preparation method of a zinc oxide nanowire array, in particular to a preparation method of a dendritic zinc oxide nanowire array. Background technique [0002] Metal oxide nanomaterials have been extensively and in-depth researched due to their superior gas sensitivity, optical properties, and low cost, and their applications have entered many fields of human production and life, promoting the development of a large number of industries. Among all kinds of functional metal oxide nanomaterials, zinc oxide has been widely used in optoelectronic devices, solar cells, and field emission devices due to its good stability, high electron mobility, and rich nano-morphology. and chemical sensors. [0003] At present, most methods for forming ZnO nanowire arrays are based on a vapor-liquid-solid (VLS) reaction mechanism (Nanoletters, 2004, 4, 423-426). This method be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
Inventor 陈滢许鹏程李昕欣徐涛郑丹
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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