Preparation method of tungsten trioxide nano film

A nano-film, tungsten trioxide technology, applied in electrodes, electrolysis process, electrolysis components, etc., to achieve excellent photoelectric performance and high stability, alleviate the shortage of fossil fuels, and the process is flexible and easy to operate.

Inactive Publication Date: 2016-01-27
XIAN UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, none of the above existing methods can prepare tungsten trioxide nano-films with high photoelectric performance under the premise of low experimental cost, simple operation and high safety, and the tungsten trioxide nano-films prepared by the existing technology are used as photoanodes in During the photoelectrochemical water splitting system, the electrolyte used is mostly an

Method used

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  • Preparation method of tungsten trioxide nano film
  • Preparation method of tungsten trioxide nano film
  • Preparation method of tungsten trioxide nano film

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Experimental program
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Embodiment 1

[0027] This embodiment includes the following steps:

[0028] Step 1, dissolving tungsten hexachloride in absolute ethanol, and magnetic stirring for 15 minutes to obtain a precursor solution; the molar concentration of tungsten hexachloride in the precursor solution is 40mmol / L;

[0029] Step 2. Apply 10 μL of the precursor solution described in step 1 onto a surface area of ​​1 cm by the drop coating method. 2 The surface of the substrate, after the precursor solution is spread on the surface of the substrate, it is blown dry with nitrogen, and then the substrate is heat-treated at 100°C for 5 minutes and then cooled to room temperature; Preferably, a micropipette is used to absorb the precursor solution, and the substrate is preferably FTO conductive glass;

[0030] Step 3, repeat step 2 20 times to obtain a film layer on the surface of the substrate;

[0031] Step 4. Place the substrate on a heating plate, and then heat the film layer in step 3 to 450°C for 4 hours at a ...

Embodiment 2

[0034] This embodiment is the same as Embodiment 1, the difference being that in step three, step two is repeated five times to obtain a film layer on the surface of the substrate; film.

Embodiment 3

[0036] This embodiment is the same as Embodiment 1, the difference being that in step three, step two is repeated 10 times to obtain a film layer on the surface of the substrate; film.

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Abstract

The invention discloses a preparation method of a tungsten trioxide nano film. The method includes the steps that firstly, tungsten hexachloride is dissolved in anhydrous ethanol, and a precursor solution is obtained after uniform stirring; secondly, the surface of a substrate is dropwise coated with the precursor solution through a dropwise coating method and is blown dry, heat treatment is performed for 3-5 min under the condition that the temperature of the substrate is 80-150 DEG C, and a film layer is obtained on the surface of the substrate after the substrate is cooled to room temperature; thirdly, the second step is repeatedly executed till the film layer is obtained on the surface of the substrate; and fourthly, the film layer is heated to 400-550 DEG C, high-temperature calcination is performed for 2-6 h, and the tungsten trioxide nano film is obtained on the surface of the substrate after high-temperature calcination. The preparation method is low in requirement for experimental equipment, easy to operate, low in cost and high in safety performance, the prepared tungsten trioxide nano film serves a photo anode material to be applied to a photoelectric chemical decomposition seawater system, good photoelectric performance and high chemical stability are shown, and low-cost and high-efficiency application can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electrodes, and in particular relates to a preparation method of a tungsten trioxide nano film. Background technique [0002] Photoelectrochemical cells (PECs) split water to produce hydrogen and convert solar energy into chemical energy. It is considered to be one of the most important ways for human beings to obtain energy by replacing fossil energy, so it has attracted widespread attention. Finding and researching potential semiconductor materials through various methods is an important research direction in this field at present. Compared with traditional semiconductor materials such as titanium dioxide and iron oxide, tungsten trioxide has a suitable band gap (2.5eV-2.9eV), and the electrode potentials of the valence band and conduction band are 3.2eV and 0.4eV, respectively, which can oxidize water. Cheng O 2 , and has the advantages of low price, high stability in acidic and neutral...

Claims

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Application Information

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IPC IPC(8): C23C18/16C25B11/04
Inventor 李远刚冯娟李华静张卓杨淑丽史永宏魏小亮王荣荣
Owner XIAN UNIV OF SCI & TECH
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