Manufacturing method of quantum dot color film substrate

A technology of color film substrate and production method, which is applied in the field of quantum dot color film substrate production, can solve the problems of quantum dot layer patterning, low resolution of quantum dot graphics, and inability to mass-produce, etc., so as to improve color saturation Effects with color gamut, enhanced color performance, and simple production process

Active Publication Date: 2016-01-27
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF10 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the patent CN102944943A and the patent US20150002788A1 both proposed a technical solution to replace the color filter film (ColorFilter) with a patterned quantum dot layer to achieve the purpose of color display, but these patents did not carry out the method of patterning the quantum dot layer. illustrate
[0004] Patent CN103226260A provides a method of dispersing quantum dots in photoresist and patterning the quantum dot layer by photolithography, but quantum dots are dispersed in photoresist, because there is an initiator (initiation) in the photoresist , polymer monomer (monomer), polymer (polymer), additive (additive) and other polymer materials, the surface chemical environment of quantum dots is complex, which greatly affects the luminous efficiency of quantum dots
In addition to the above methods, quantum dot graphics can also be produced by transfer printing, screen printing, etc., but the resolution of the quantum dot graphics obtained by the transfer printing method is not high, the edges of the graphics are jagged, and the quantum dot layer and the matrix Adhesion needs to be improved; while the method of inkjet printing to form a patterned quantum dot layer has high requirements on inkjet printing equipment, how to ensure the stability of inkjet ink droplets and printing accuracy still has technical barriers, and it still cannot be mass-produced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of quantum dot color film substrate
  • Manufacturing method of quantum dot color film substrate
  • Manufacturing method of quantum dot color film substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0033] see figure 1 , the invention provides a method for manufacturing a quantum dot color film substrate, comprising the following steps:

[0034] Step 1. Provide a color filter substrate, the color filter substrate includes a base substrate 11, a black matrix 12 located on the base substrate 11, and a color filter layer 13, and the color filter layer 13 includes a red color resist Layer 131, green color resist layer 132, and transparent photoresist layer 133;

[0035] Specifically, the base substrate 11 is a glass substrate.

[0036] Step 2, providing a wettability change agent, which includes the following components: photocatalyst, organopolysiloxane, and solvent; as figure 2 As shown, a layer of wettability changing agent is coated o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a manufacturing method of a quantum dot color film substrate. On the basis of the characteristic that the wettability of a wettability changing layer with a photocatalyst changes better after the wettability changing layer is irradiated by ultraviolet light, a highly-fine quantum dot pattern is formed, the quantum dot manufacturing technology is simplified, and meanwhile the precision of the quantum dot pattern is improved; the manufacturing technology is simple, waste of quantum dot materials is reduced, the cost is reduced, and the obtained quantum dot color film substrate can effectively improve the saturation and color gamut of a display device and enhance the color expression ability of a display panel.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a quantum dot color film substrate. Background technique [0002] With the continuous development of display technology, people have higher and higher requirements for display quality of display devices. Quantum dots (Quantum Dots, referred to as QDs) are usually spherical or quasi-spherical semiconductor nanoparticles composed of II-VI or III-V group elements, and the particle size is generally between a few nanometers and tens of nanometers. Because the particle size of QDs is smaller than or close to the exciton Bohr radius of the corresponding bulk material, a quantum confinement effect will be generated, and its energy level structure will change from the quasi-continuous structure of the bulk material to the discrete structure of the quantum dot material, resulting in QDs showing special properties of stimulated emission of light. As the size o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1335G02F1/13357
CPCG02F1/133512G02F1/133514G02F1/133516G02F1/133614B29D11/00788B82Y30/00B82Y20/00G02F1/133617G02F2202/36G02F1/1335G02F1/133528G02F1/133621G02F1/1368G02F2202/10
Inventor 刘国和
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products