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Preparation method of Tb doped Ag2S diluted magnetic semiconductor micrometer particle

A technology of dilute magnetic semiconductors and micron particles, applied in chemical instruments and methods, silver compounds, silver compounds, etc., can solve problems such as poor process reproducibility, many control parameters, and low yield, and achieve high saturation magnetization and simple equipment , The effect that the process is easy to control

Inactive Publication Date: 2016-02-03
深圳市创建欣科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are generally many control parameters, especially atmosphere control and pH control. Once the atmosphere and pH parameters change, it will lead to low yield, or even failure, and poor process reproducibility.

Method used

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  • Preparation method of Tb doped Ag2S diluted magnetic semiconductor micrometer particle
  • Preparation method of Tb doped Ag2S diluted magnetic semiconductor micrometer particle
  • Preparation method of Tb doped Ag2S diluted magnetic semiconductor micrometer particle

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] (1) weigh 200g choline chloride (C) with electronic balance 5 h 14 ClNO) and 100g urea (H 2 NCONH 2 ), use a milling tank to mix and grind the two into a liquid state as a co-solvent.

[0016] (2) Weigh 0.2mol silver nitrate (AgNO 3 ), 0.2mol thiourea (CH 4 N 2 S), 0.02mol terbium nitrate (Tb(NO 3 ) 3 ), the three are added to the co-solvent and ground into a liquid state, and the excess thiourea can be used as a surfactant.

[0017] (3) Put the milled solution into an ultrasonic reaction kettle, put the ultrasonic reaction kettle into an electric blast drying oven at 150° C., and react under ultrasonic conditions for 3 hours.

[0018] (4) Take out the ultrasonic reactor, first wash the resulting product several times with absolute ethanol, then wash it several times with distilled water, and then put it into an electric blast drying oven to dry to obtain Tb-doped Ag 2 S dilute magnetic semiconductor microparticles.

[0019] Carry out XRD analysis to product, ...

Embodiment 2

[0021] (1) Weigh 100g choline chloride (C) with an electronic balance 5 h 14 ClNO) and 100g urea (H 2 NCONH 2 ), use a milling tank to mix and grind the two into a liquid state as a co-solvent.

[0022] (2) Weigh 0.3mol silver nitrate (AgNO 3 ), 0.1mol thiourea (CH 4 N 2 S), 0.02mol terbium nitrate (Tb(NO 3 ) 3 ), the three are added to the co-solvent and ground into a liquid state, and the excess thiourea can be used as a surfactant.

[0023] (3) Put the milled solution into an ultrasonic reactor, put the ultrasonic reactor into an electric blast drying oven at 180° C., and react under ultrasonic conditions for 6 hours.

[0024] (4) Take out the ultrasonic reactor, first wash the product several times with absolute ethanol, then wash it several times with distilled water, and then put it into an electric blast drying oven for drying. After characterization and analysis, it is shown that the needle-shaped Tb Doped with Ag 2 S dilute magnetic semiconductor micropartic...

Embodiment 3

[0026] (1) Weigh 100g choline chloride (C) with an electronic balance 5 h 14 ClNO) and 200g urea (H 2 NCONH 2 ), use a milling tank to mix and grind the two into a liquid state as a co-solvent.

[0027] (2) Weigh 0.1mol silver nitrate (AgNO 3 ), 0.2mol thiourea (CH 4 N 2 S), 0.02mol terbium nitrate (Tb(NO 3 ) 3 ), the three are added to the co-solvent and ground into a liquid state, and the excess thiourea can be used as a surfactant.

[0028] (3) Put the milled solution into an ultrasonic reaction kettle, put the ultrasonic reaction kettle into an electric blast drying oven at 130° C., and react under ultrasonic conditions for 5 hours.

[0029] (4) Take out the ultrasonic reactor, first wash the product several times with absolute ethanol, then wash it several times with distilled water, and then put it into an electric blast drying oven for drying. After characterization and analysis, it is shown that the needle-shaped Tb Doped with Ag 2 S dilute magnetic semicondu...

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Abstract

The invention discloses a preparation method of a Tb doped Ag2S diluted magnetic semiconductor micrometer particle. The preparation method comprises the following steps: (1) mixing choline chloride and urea, and grinding the mixture to obtain a liquid taken as a cosolvent; (2) weighing silver nitrate, thiourea, and terbium nitrate, wherein the mole ratio of silver nitrate to thiourea is 3:1 to 1:2, and the mole ratio of silver nitrate to terbium nitrate is 10:1 to 10:2, adding silver nitrate, thiourea, and terbium nitrate into the cosolvent in sequence, and grinding the components into liquid; (3) after grinding, filling the liquid into an ultrasonic reactor, and placing the ultrasonic reactor into an electrothermal blowing drying box to carry out reactions; (4) washing the reaction products by anhydrous ethanol for several times, then washing the reaction products by distilled water for several times, drying so as to obtain the Tb doped Ag2S diluted magnetic semiconductor micrometer particles. The provided method has the advantages that the operation is simple and is easy to control, the repeatability is good, the method is green and environment-friendly, and no surfactant or solvent is used.

Description

technical field [0001] The invention belongs to the technical field of preparation of dilute magnetic semiconductor granular materials, in particular to a method for preparing Tb-doped Ag 2 S Diluted Magnetic Semiconductor Microparticles Method. Background technique [0002] Diluted magnetic semiconductor refers to a magnetic semiconductor formed by substituting a small amount of transition metal elements or rare earth elements for some ions in nonmagnetic semiconductors. Because dilute magnetic semiconductors can combine the two degrees of freedom of electronic charge and spin in semiconductors, we can realize the functions of information processing and non-volatile storage. In dilute magnetic semiconductors, Ag 2 S semiconductor has high chemical temperature resistance, narrow energy band, good photoelectric and thermoelectric properties, and is widely used in photoelectric manufacturing. Introducing rare earth elements into Ag 2 In the S semiconductor, the doped syste...

Claims

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Application Information

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IPC IPC(8): C01G5/00
Inventor 吴滨
Owner 深圳市创建欣科技有限公司