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A sa-ligbt

An N-type, well region technology, applied in transistors, electrical components, electric solid state devices, etc., can solve the problems of reducing the resistance of the drift region, affecting the stability of the power electronic system, and the device cannot be turned on normally, so as to improve the turn-off characteristics. , The effect of suppressing the snapback phenomenon, improving the off-state characteristics and anti-latch ability

Active Publication Date: 2018-03-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the device enters the IGBT mode, due to the conductance modulation effect, the resistance of the drift region will be significantly reduced, and the forward voltage drop of the device will be greatly reduced, resulting in the snapback phenomenon.
The snapback phenomenon will be more obvious under low temperature conditions, which will cause the device to fail to turn on normally and seriously affect the stability of the power electronic system

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as image 3 As shown, this example includes an N-type substrate 1, a dielectric layer 2 located on the upper surface of the N-type substrate, and an N-type drift region 3 located on the upper surface of the dielectric layer 2; one end of the upper layer of the N-type drift region 3 has a P-type well Region 4, the other end of which has an N-type well region 5; the upper layer of the P-type well region 4 has a P+ body contact region 8 and an N+ cathode region 9, and the P+ body contact region 8 and N+ cathode region 9 are juxtaposed along the lateral direction of the device set, and the N+ cathode region 9 is located on the side close to the N-type well region 5; the upper surface of the P-type well region 4 between the N+ cathode region 9 and the N-type drift region 3 has a gate structure; the N-type The upper layer of the well region 5 has a P+ anode region 10 and an N+ anode region 11, the P+ anode region 10 and the N+ anode region 11 are arranged side by side al...

Embodiment 2

[0036] Such as Figure 4 As shown, the basic structure of this embodiment is the same as that of Embodiment 1, the difference is that the width of the P+ anode region 10 along the lateral direction of the device is greater than the width of the N+ anode region 11 along the lateral direction of the device, and a=b at the same time, in the P+ anode region and the N+ There is an N-type high-resistance area in the gap of the anode area. The N-type high-resistance region appearing in this example and the following embodiments means that a certain concentration of P-type impurities is compensated and injected into the original N-type well region to make it an N-type high-resistance region.

[0037] In addition to the beneficial effects described in Embodiment 1, this example can also significantly increase the distributed resistance of the electron current flowing on the PN junction formed by the P+ anode region and the N-type high-resistance region, thereby making it easier to supp...

Embodiment 3

[0039] Such as Figure 5 , the basic structure of this embodiment is the same as that of Embodiment 2, the difference is that the distance between the first P+ anode region and the second P+ anode region near the P-type well region 4 is a, and the distance between the N+ anode region 11 side The spacing is c (opening 13 in the figure), and a

[0040] This embodiment can also increase the distribution resistance of the electron current flowing on the PN junction formed by the P+ anode region and the N-type high resistance region, thereby suppressing the snapback phenomenon at the initial stage of device conduction.

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Abstract

The invention belongs to the technical field of semiconductors, and in particular relates to a SA‑LIGBT. The main scheme of the present invention is that the N-type well region in the present invention has a P+ anode region and an N+ anode region parallel to the lateral direction of the device, and the P+ anode region and the N+ anode region are segmented structures along the device longitudinal direction; at the same time , The P+ anode region and the N+ anode region are in contact with the P-type buried layer, so the formed anode has two electron blocking layers, namely the P-type buried layer and the P+ anode region. When the device is in the unipolar mode at the initial stage of forward conduction, the two electron blocking layers can prevent the electrons emitted from the cathode from being collected by the N+ anode region, thereby increasing the P+ anode region and the P-type first buried layer in the unipolar mode. The forward voltage drop of the PN junction formed by the N-type well region or the N-type high-resistance region enables the device to enter the bipolar mode under a small unipolar current, thereby suppressing the occurrence of the snapback phenomenon. The beneficial effect of the invention is that the snapback phenomenon can be effectively suppressed, and at the same time, the off-state characteristics of the device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and specifically relates to a SA-LIGBT (Short Anode IGBT, Short Anode-Lateral Insulated Gate Bipolar Transistor, short-circuited anode lateral insulated gate bipolar transistor). Background technique [0002] Since its invention in 1982, IGBT has been widely used in many fields such as transportation, motor control, and smart grid. Due to the conductance modulation effect of IGBT in the forward conduction process, compared with other types of power devices, IGBT has high withstand voltage, low power consumption and good high-frequency characteristics, so it has a wide range of applications in power ICs. application. But at the same time, because a large amount of plasma is stored in the drift region of the IGBT during the forward conduction process, the turn-off loss of the IGBT is very large. SA-IGBT provides a low-resistance discharge channel for excess electrons in the drift region, w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/082
CPCH01L27/0823
Inventor 罗小蓉阮新亮周坤邓高强魏杰马达孙涛张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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