Novel method for preparing perovskite thin film

A technology of perovskite and a new method, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve problems such as limiting the large-scale preparation of perovskite thin films, increasing the cost of perovskite, and limiting selection, etc., to achieve Good for separation and transmission, fewer defects, and high uniformity

Active Publication Date: 2016-02-17
QINGDAO INST OF BIOENERGY & BIOPROCESS TECH CHINESE ACADEMY OF SCI
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The perovskite film prepared by the vapor-assisted solution method combined with the evaporation method and the solution method has good crystallinity and film-forming properties, but this evaporation and high temperature process increase the cost of preparing perovskite, thus limiting Large-Scale Fabrication of Perovskite Thin Films
The post-treatment technology of methylamine lead iodine can realize the preparation of high-quality perovskite films relatively simply, and this method first prepares the initial perovskite film, and then further improves the quality of the perovskite film by further treatment with organic amines. Preparation of initial perovskite films also requires relatively high cost, which greatly limits the choice of initial raw materials

Method used

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  • Novel method for preparing perovskite thin film
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  • Novel method for preparing perovskite thin film

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Experimental program
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Embodiment 1

[0023] First, TiO was prepared by sol-gel method 2 Colloid, spin-coated on the cleaned FTO glass, then 500 o C heat treatment for 30min to obtain dense TiO 2 film. Spin-coating TiO on dense thin films 2 Slurry, TiO 2 particle size ~20nm, and then a further 500 o C heat treatment for 30min to obtain TiO 2 mesoporous film. Second, the HPbI 3 The crystals were prepared as a 50% solution by weight and then spin-coated on mesoporous TiO 2 film, heated to 100 o C, 10min, volatilize the solvent, then the prepared HPbI 3 The film was fumigated with methylamine gas for 4s to obtain a dense methylamine-lead-iodide perovskite film with good crystallinity. Finally, the hole transport layer spiro was spin-coated on the perovskite layer, and the silver electrode was vapor-deposited to assemble a solar cell device.

[0024] Characterize the perovskite film obtained in this embodiment and the solar cell prepared from this film, such as figure 1 pre-HPbI 3 membrane and treated CH3...

Embodiment 2

[0026] First, TiO was prepared by sol-gel method 2 Colloid, spin-coated on the cleaned FTO glass, then 500 o C heat treatment for 30min to obtain dense TiO 2 film. Spin-coating TiO on dense thin films 2 Slurry, TiO 2 particle size ~20nm, and then a further 500 o C heat treatment for 30min to obtain TiO 2 mesoporous film. Second, the HPbI 3 The crystals were prepared as a 50% solution by weight and then spin-coated on mesoporous TiO 2 film, heated to 100 o C, 10min, volatilize the solvent, then in the prepared HPbI 3 Drop 0.1mL of 1mol / L methylamine chlorobenzene solution on the film, and then rotate it at 3000r / min for 40s to obtain a dense methylamine lead iodide perovskite film with good crystallinity. Finally, the hole transport layer spiro was spin-coated on the perovskite layer, and the silver electrode was vapor-deposited to assemble a solar cell device. The resulting cell efficiency was 15.8%.

Embodiment 3

[0028] First, TiO was prepared by sol-gel method 2 Colloid, spin-coated on the cleaned FTO glass, then 500 o C heat treatment for 30min to obtain dense TiO 2 film. Second, the HPbI 3 The crystals were prepared as a 50% solution by weight and then spin-coated on dense TiO 2 film, heated to 100 o C, 10min, volatilize the solvent, then the prepared HPbI 3 The film was fumigated with ethylamine gas for 4s to obtain a dense yellow-phase ethylamine-lead-iodide perovskite film with good crystallinity. Finally, the hole transport layer spiro was spin-coated on the perovskite layer, and the silver electrode was vapor-deposited to assemble a solar cell device. The resulting cell efficiency was 2.1%.

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Abstract

The invention relates to a novel method for preparing a perovskite thin film. The novel method comprises a step of carrying out organic amine processing on a prepared perovskite precursor thin film, thereby preparing the perovskite thin film. According to the invention, the preparation technology is simple; cost is low; surface roughness of the thin film is low; crystallinity is high; and the novel method is applicable for preparing a large number of highly-efficient perovskite solar cells, light emitting diodes, light sensing elements and laser devices.

Description

technical field [0001] The invention belongs to a preparation method of a thin film material, in particular to a new method for preparing a perovskite thin film. Background technique [0002] Since the first application of organic-inorganic hybrid perovskite in solar cells in 2009, the percentage of perovskite solar cells has risen rapidly from 3.8% to the current 20.1%, which has attracted extensive attention from researchers around the world. Moreover, perovskite solar cells have also attracted widespread interest in the field of diodes and lasers. In these devices, the perovskite active material is the core part, and the quality of the perovskite film is a key factor affecting the performance of the device. Therefore, the research on the film-forming properties of perovskite is of great significance. [0003] The film-forming property of perovskite is closely related to the preparation process of perovskite. Generally speaking, the film-forming process of perovskite can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00
CPCH10K71/12H10K85/30Y02E10/549
Inventor 崔光磊逄淑平王在伟周忠敏徐红霞张波刘志宏
Owner QINGDAO INST OF BIOENERGY & BIOPROCESS TECH CHINESE ACADEMY OF SCI
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