Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A kind of nanoimprint photoresist and preparation method thereof

A technology of nanoimprinting and photoresist, which is applied in the field of material science and micro-nano processing, and can solve problems such as template damage, low surface energy, and pattern defects.

Active Publication Date: 2019-12-20
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

can end up with graphics defects and even damage to the stencil
[0006] Therefore, it is necessary to seek a nanoimprint photoresist with low surface energy to overcome the defects of pattern defects and even template damage caused by photoresists with high surface energy in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of nanoimprint photoresist and preparation method thereof
  • A kind of nanoimprint photoresist and preparation method thereof
  • A kind of nanoimprint photoresist and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Embodiment 1: Modified PMMA thermoplastic nanoimprint photoresist containing fluorinated graphite

[0075] The nanoimprint photoresist of this embodiment comprises the following components: 9.5 g of small organic molecule solvent, 0.5 g of thermoplastic resin, 0.0025 g of fluorinated graphite and 0.002 g of surfactant.

[0076] The preparation process of the nanoimprint photoresist in this embodiment is as follows: 0.5 g of PMMA was added to 9.5 g of toluene, mixed uniformly, and then ultrasonically treated for 10-20 min to obtain a stable solution. Add 0.0025g of fluorinated graphite and 0.002g of polyetheramine D230 dispersant to the solution filtered through a 0.45μm pore size filter, mix well, and then ultrasonically treat for 0.5h to 1h to obtain a stable fluorinated graphite. permanent PMMA nanoimprint photoresist.

[0077] figure 1 The substance in the reagent bottle indicated by the middle mark a is a photo of the modified PMMA thermoplastic nanoimprint photor...

Embodiment 2

[0078] Example 2: Modified UV-curable nanoimprint photoresist containing fluorinated graphite

[0079] The nanoimprint photoresist of this embodiment includes the following components: 8.5 g of small organic molecule solvent, 1.5 g of photocurable resin, 0.1 g of photoinitiator, 0.0025 g of fluorinated graphite and 0.002 g of surfactant.

[0080] The preparation process of the nanoimprint photoresist in this embodiment is as follows:

[0081] Weigh 8.5g of diacetone alcohol and 1.5g of acrylate, mix well, stir at 35°C for 30min to obtain a transparent solution, add 0.1g of 2-phenylbenzyl-2-dimethylamine-1-(4- The morpholine (benzylphenyl) butanone was stirred until dissolved. After filtering the solution with a pore size filter of 0.2 μm, add 0.0025 g of fluorinated graphite and 0.002 g of D230, mix evenly, and ultrasonically treat for 0.5 to 1 hour to obtain a stable modified UV-curable nano-imprint adhesive containing fluorinated graphite.

[0082] figure 1 The substance ...

Embodiment 3

[0083] Example 3 Modified PMMA thermoplastic nanoimprint photoresist containing oxidized graphite fluoride

[0084] The nanoimprint photoresist of this embodiment comprises the following components: 9.5 g of small organic molecule solvent, 1.5 g of thermoplastic resin, 0.0025 g of oxidized graphite fluoride and 0.002 g of surfactant.

[0085] The preparation process of the nanoimprint photoresist in this embodiment is as follows:

[0086] Add 0.5g PMMA to 9.5g toluene, mix well and then ultrasonically treat for 10-20min to obtain a stable solution. Add 0.0025g of oxidized graphite fluoride and 0.002g of polyetheramine D230 dispersant to the solution filtered through a 0.45μm pore size filter, mix well and then ultrasonically treat for 0.5-1h to obtain a stable oxidized fluorinated graphite Modified PMMA nanoimprint photoresist.

[0087] figure 1 The substance in the reagent bottle indicated by the middle mark b is a photo of the modified PMMA thermoplastic nanoimprint photo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A nanoimprinted photoresist and preparation method therefor. The nanoimprinted photoresist comprises the following components in percentage by weight: 65-97% of an organic small-molecular solvent, 1-30% of resin, 0.01-5% of graphite fluoride and a derivative thereof, 0.01-5% of a surfactant, and 0-1% of an additive. Graphite fluoride and a derivative thereof are added to the nanoimprinted photoresist, and because graphite fluoride and the derivative thereof have low surface energy, the problems such as pattern defects and mold damage during demolding caused by an excessive adhesive force between a traditional photoresist having high surface energy and the mold are resolved.

Description

technical field [0001] The invention relates to a nano-imprint photoresist, and also relates to a preparation method of the nano-imprint photoresist, belonging to the fields of material science and micro-nano processing. Background technique [0002] As a next-generation lithography technology, nanoimprint technology has the advantages of high resolution, high yield, and low cost. Different from traditional photolithography technology, nanoimprint technology directly adopts mechanical imprint method to transfer micro-nano pattern instead of using light to shape photoresist. According to different materials and processes, the commonly used nanoimprint technology can be divided into two types: hot embossing (HEL) and ultraviolet imprinting (UV-NIL). [0003] Thermoplastic nanoimprinting (ie hot embossing) specifically uses a thermoplastic material, and when the thermoplastic material is heated above the glass transition temperature, the pattern of the template is transferred ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/004
CPCG03F7/0002G03F7/004G03F7/0048G03F7/00
Inventor 万春旭张至程鑫孙大陟
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com