A control device for atomic layer deposition instrument

Abstract

The invention provides a control equipment for an atomic layer deposition instrument. The control equipment comprises a single-chip microcomputer control system, a temperature control module and a protection module, wherein the single-chip microcomputer control system comprises a single-chip microcomputer, a program input unit, a time control unit, a signal control unit, a performing unit and a display unit, the program input unit, the time control unit, the signal control unit and the display unit are respectively connected with the single-chip microcomputer, an output end of the signal control unit is connected with a performing element through the performing unit, the temperature control module is connected with the single-chip microcomputer and the performing element, and the protection module comprises a temperature protection unit connected with the single-chip microcomputer and a power-off protection unit. Through the control equipment, complexity in employing multistage indirect control performing units of a computer or an industrial control computer can be avoided, onsite control is realized by directly employing the single-chip microcomputer, the atomic layer deposition instrument taking the control equipment as core has functions of fixed-time controllable pumping of precursors in various types, system temperature, overheating and power-off protection and alarming, and thereby manufacturing cost is greatly reduced.

Description

technical field

[0001] The invention belongs to the field of atomic layer deposition control, in particular to a control device for an atomic layer deposition instrument. Background technique

[0002] Modern information and energy technologies rely heavily on thin-film devices and their preparation equipment and technologies. For example, nanoelectronic devices, thin-film solar cells, and photoelectric hydrogen production devices need to deposit various semiconductors, metals, buffer layers, and charge transport layers. Atomic Layer Deposition (ALD) technology, as a film preparation technology that can precisely control the deposition thickness, was invented by Finnish scientists in 1977 [Patent US 4058430]. Compared with chemical vapor deposition technology, atomic layer deposition technology can deposit substances layer by layer on the substrate in the form of a single layer of atoms. Moreover, the chemical adsorption reaction of a new layer of atomic film is selective, ...

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