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A control device for atomic layer deposition instrument

A technology for controlling equipment and deposition apparatus, applied in the field of atomic layer deposition control, can solve the problems that have not yet been developed, and achieve the effects of easy equipment maintenance, low production cost and powerful functions

Inactive Publication Date: 2018-07-17
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, the atomic layer deposition control system using single-chip microcomputer as the core has not yet been developed.

Method used

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  • A control device for atomic layer deposition instrument
  • A control device for atomic layer deposition instrument
  • A control device for atomic layer deposition instrument

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0052] Example 1. Such as Figure 7 As shown, a typical atomic layer deposition program flow is set as follows: the system contains 2 high-speed valves, 1 baffle valve, 5 heating channels and a pressure detector, and the program can control different set temperatures of the heating channels (from room temperature to to 300 degrees Celsius), flapper valve closing and waiting time, high-speed valve opening time. The flow of the program can set the pumping times of the precursors (n1 and n1’) respectively, set the total reaction cycle times (m1), and keep monitoring the pressure of the system.

example 2

[0053] Example 2. Set the control signals of the three channels of the field effect transistor (MOS transistor) execution unit through the microcontroller (such as Figure 8 As shown), each channel can control a gas path of a reaction precursor. For example, starting from 0 seconds, channel 1 sends out a pulse of 10 milliseconds every 10 seconds; starting from the third second, channel 2 sends out a pulse of 10 milliseconds every 10 seconds, and starting from the sixth second, channel 3 sends out a pulse of 10 milliseconds every 10 seconds The pulse voltage (such as 24 volts) can open the ALD high-speed valve to pump in the reaction precursor. After the pulse ends, the ALD high-speed valve is closed to stop pumping in the reaction precursor.

example 3

[0054] Example 3. Modulate the time when the baffle valve is opened, the baffle valve of the atomic layer deposition instrument is controlled by a single-chip computer to close d1 (such as 24) seconds, open d2 (such as 38) seconds, cycle operation, and keep nitrogen in the reactor during the same flow rate at 20 ml / sec. When the flapper valve is closed, the pressure of the system gradually rises, the closing time is 24 seconds, and the pressure rises to a very high value; when the flapper valve is opened, the residual gas in the system is sucked away by the vacuum system, the system pressure drops, and the opening time is 38 seconds , the pressure tends to be stable; when the cycle is in progress, the pressure of the system changes periodically (such as Figure 9 shown).

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Abstract

The invention provides a control equipment for an atomic layer deposition instrument. The control equipment comprises a single-chip microcomputer control system, a temperature control module and a protection module, wherein the single-chip microcomputer control system comprises a single-chip microcomputer, a program input unit, a time control unit, a signal control unit, a performing unit and a display unit, the program input unit, the time control unit, the signal control unit and the display unit are respectively connected with the single-chip microcomputer, an output end of the signal control unit is connected with a performing element through the performing unit, the temperature control module is connected with the single-chip microcomputer and the performing element, and the protection module comprises a temperature protection unit connected with the single-chip microcomputer and a power-off protection unit. Through the control equipment, complexity in employing multistage indirect control performing units of a computer or an industrial control computer can be avoided, onsite control is realized by directly employing the single-chip microcomputer, the atomic layer deposition instrument taking the control equipment as core has functions of fixed-time controllable pumping of precursors in various types, system temperature, overheating and power-off protection and alarming, and thereby manufacturing cost is greatly reduced.

Description

technical field [0001] The invention belongs to the field of atomic layer deposition control, in particular to a control device for an atomic layer deposition instrument. Background technique [0002] Modern information and energy technologies rely heavily on thin-film devices and their preparation equipment and technologies. For example, nanoelectronic devices, thin-film solar cells, and photoelectric hydrogen production devices need to deposit various semiconductors, metals, buffer layers, and charge transport layers. Atomic Layer Deposition (ALD) technology, as a film preparation technology that can precisely control the deposition thickness, was invented by Finnish scientists in 1977 [Patent US 4058430]. Compared with chemical vapor deposition technology, atomic layer deposition technology can deposit substances layer by layer on the substrate in the form of a single layer of atoms. Moreover, the chemical adsorption reaction of a new layer of atomic film is selective, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05B19/042G05D27/02
CPCG05B19/0428G05B2219/2609G05D27/02
Inventor 杨晓刚雷岩胡金刚张艳鸽李品将石玉英郑直
Owner XUCHANG UNIV
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