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Sputtering target material and CIGS-based thin film solar cell manufactured by sputtering target material

A technology for solar cells and sputtering targets, used in sputtering plating, circuits, photovoltaic power generation, etc., can solve the problems of difficult battery recycling, poor film thickness uniformity, and excessive waste water, and achieve large-scale continuous cleaning. Production, large-area uniform film formation, and the effect of reducing manufacturing costs

Active Publication Date: 2016-02-24
厦门神科太阳能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the wet chemical method to deposit the CdS film has the following disadvantages: 1) the chemical water bath process cannot be well adapted to the production process of large-scale CIGS-based thin-film solar cells, and the uniformity of the deposited film thickness is relatively poor; 2) Cd in the CdS film layer is a heavy metal element. The treatment of cadmium-containing wastewater in the battery production process will increase the manufacturing cost of the battery. During the use of thin-film batteries, cadmium may leak to the environment due to natural conditions and other factors. The danger of being removed will lead to the destruction of the ecological environment. At the same time, due to the existence of cadmium, the recycling of this battery is also difficult.
However, it is difficult to achieve good deposition under large-area conditions by using the chemical water bath method to deposit films, and the production efficiency is low, and the production will also cause more wastewater discharge, which will increase the manufacturing cost of the battery

Method used

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  • Sputtering target material and CIGS-based thin film solar cell manufactured by sputtering target material
  • Sputtering target material and CIGS-based thin film solar cell manufactured by sputtering target material
  • Sputtering target material and CIGS-based thin film solar cell manufactured by sputtering target material

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Deposit a 500nm molybdenum electrode layer by magnetron sputtering on the surface of a soda-lime glass; then form a 1.9um p-type copper indium gallium selenide light absorption layer on the molybdenum electrode layer; then form a p-type copper indium gallium selenide light absorption layer on the molybdenum electrode layer Form a 50nm n-type copper indium gallium selenide film layer on the n-type copper indium gallium selenide film layer; then use an Al-doped zinc selenide target on the n-type copper indium gallium selenide film layer, and use DC magnetron sputtering to deposit a 50nm doped zinc selenide film layer, the content of Al in the doped zinc selenide film layer is 500ppm; then adopt magnetron sputtering to deposit 800nm ​​AZO (Al-doped ZnO) film layer on the doped zinc selenide film layer as a transparent conductive layer. The structure of the thin film battery of this embodiment is as figure 1 shown.

Embodiment 2

[0037] A 550nm molybdenum electrode layer was deposited by magnetron sputtering on the surface of a soda-lime glass; then a 1.8um p-type copper indium gallium selenide light absorption layer was formed on the molybdenum electrode layer; then a p-type copper indium gallium selenide light absorption layer was formed Form a 45nm n-type copper indium gallium selenide film layer on the n-type copper indium gallium selenide film layer; then use an Al-doped zinc selenide target material on the n-type copper indium gallium selenide film layer, and use AC magnetron sputtering to deposit a 40nm doped zinc selenide film layer, the content of Al in the doped zinc selenide film layer is 800ppm; then adopt magnetron sputtering to deposit 40nm doped zinc oxide film layer on the doped zinc selenide film layer, the resistivity of the doped zinc oxide film layer is 45Ωcm; then, a 600nm AZO (Al-doped ZnO) film layer is deposited as a transparent conductive layer on the doped zinc oxide film layer...

Embodiment 3

[0039] A metal molybdenum electrode layer of 500nm is deposited on the surface of a soda lime glass by magnetron sputtering; then a 1.9um p-type copper indium gallium selenide light absorption layer is formed on the molybdenum electrode layer; then a p-type copper indium gallium selenide light absorption layer is formed A 35nm n-type copper indium gallium selenide film layer is formed on the n-type copper indium gallium selenide film layer; then an Al-doped zinc selenide target is used on the n-type copper indium gallium selenide film layer, and a 50nm doped zinc selenide is deposited by DC magnetron sputtering film layer, the content of Al in the doped zinc selenide film layer is 1300ppm; then on the doped zinc selenide film layer, adopt magnetron sputtering to deposit the intrinsic ZnO film layer of 40nm; then use the intrinsic ZnO film layer on the intrinsic ZnO film layer Magnetron sputtering is used to deposit 800nm ​​AZO (Al-doped ZnO) film layer as a transparent conducti...

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Abstract

The invention provides a sputtering target material and a CIGS-based thin film solar cell manufactured by the sputtering target material. A certain amount of B, Al, Ga or In elements are introduced to a zinc selenide material to prepare a zinc selenide sputtering target material; and the zinc selenide sputtering target material is used to manufacture THE thin film solar cell without cadmium. The zinc selenide sputtering target material can adopt DC sputtering deposition or AC sputtering deposition, so that a complicated RF sputtering device is not required for depositing a zinc selenide film layer, therefore, the manufacturing cost of the thin film cell can be reduced.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, and more specifically, the invention provides a sputtering target and the production of CIGS-based thin-film solar cells by using the sputtering target. Background technique [0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a direct bandgap P-type semiconductor material with an absorption coefficient as high as 10 5 / cm, 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0749C23C14/34C23C14/06
CPCC23C14/0629C23C14/3407H01L31/0322H01L31/0749Y02E10/541Y02P70/50
Inventor 李艺明邓国云
Owner 厦门神科太阳能有限公司