Inductively heated rutile single crystal growth furnace and method for preparing rutile by using same

An induction heating and growth furnace technology, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of large axial temperature gradient, easy existence of large stress, and impact on the growth interface, and achieve accurate temperature changes , Reduce the mass of the furnace body and reduce the impact of airflow

Active Publication Date: 2016-03-02
沈阳鑫谱晶体科技有限公司
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The crystal dislocation density grown by the optical floating zone method is low, but since the radial temperature distribution of the growth interface is always low in the center and high outside, the growth interface is in an unstable state, and it is difficult to grow large-sized crystals
Although the traditional flame fusion method can grow large-sized single crystals, due to the use of hydrogen-oxygen flame as the heat source, the quality of rutile single crystals grown by this method is still defective. The main reason is that the temperature distribution of the hydrogen-oxygen flame is difficult to control accurately, and the growth interface The impact of the airflow seriously affects the quality of the crystal; the axial temperature gradient below the crystal growth interface is large, and there is a large stress in the crystal; the dislocation density of the crystal is generally high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inductively heated rutile single crystal growth furnace and method for preparing rutile by using same
  • Inductively heated rutile single crystal growth furnace and method for preparing rutile by using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0033] See figure 1 , An induction heating rutile single crystal growth furnace, comprising: a stainless steel furnace shell, the furnace shell 1 is separated by an upper cavity 11 and a lower cavity 12 by a ceramic plate, the top of the furnace shell 1 is provided with a feed inlet 7, on the shell A ceramic cover 2 is provided; the first heating device includes a conductive ceramic tube 8 placed in the upper cavity 11 as a heating section, the conductive ceramic tube 8 is the feed channel between the feed port 7 and the lower cavity 12, and the conductive ceramic tube 8 The quartz tube 3 is sheathed, the quartz tube 3 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

The present invention relates to an inductively heated rutile single crystal growth furnace and a method for preparing rutile by using the same, and belongs to the field of single crystal growth, so as to solve the problem that temperature distribution is difficult to be controlled accurately, an axial temperature gradient below a crystal growth interface is large, and high stress is prone to occur in the crystal. The growth furnace comprises: a furnace housing divided into an upper cavity and a lower cavity; a first heating apparatus, comprising a conductive ceramic tube that is disposed in the upper cavity and that serves as a heating section, wherein the conductive ceramic tube is a feed channel of a feed inlet and the lower cavity, the conductive ceramic tube is externally sleeved with a quartz tube, and a first electromagnetic induction coil is wound around the quartz tube; a growth chamber disposed in the lower cavity, wherein a growth region of the growth chamber is disposed below the first heating apparatus; and a second heating apparatus, comprising a second electromagnetic induction coil that is disposed in an insulation layer of the growth chamber under a crystal growth region, and forming a temperature keeping section. According to the growth furnace and the method provided by the present invention, temperature can be changed more accurately, and a temperature gradient of crystal growth can be adjusted according to needs at any time.

Description

Technical field [0001] The invention relates to an optical crystal growth furnace, in particular to an induction heating rutile single crystal growth furnace and a method for preparing rutile, belonging to the field of single crystal growth. Background technique [0002] Rutile single crystal has attracted much attention due to its excellent physical and chemical properties. Mainly manifested in high refractive index and birefringence, good transmittance in the visible-infrared band, it is widely used in the preparation of optical isolators, optical circulators and other devices in optical communication systems, as well as refractors and polarizers of electronic computers , Nicolae prisms, polarizers, photometers, rotatory sugar meters, interference laser imagers, colorimeters for chemical analysis, etc. in polarizing microscopes are indispensable materials for modern national defense, aerospace and scientific research. [0003] The current methods for growing rutile single crysta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/16
Inventor 唐坚刘旭东张瑞青毕孝国孙旭东
Owner 沈阳鑫谱晶体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products