Induction heating rutile single crystal growth furnace and method for preparing rutile

A technology of induction heating and growth furnace, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of large axial temperature gradient, growth interface impact, difficult to grow large-sized crystals, etc., to achieve accurate temperature changes , The effect of reducing airflow impact and reducing the number of defects

Active Publication Date: 2017-10-31
沈阳鑫谱晶体科技有限公司
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Problems solved by technology

The crystal dislocation density grown by the optical floating zone method is low, but since the radial temperature distribution of the growth interface is always low in the center and high outside, the growth interface is in an unstable state, and it is difficult to grow large-sized crystals
Although the traditional flame fusion method can grow large-sized single crystals, due to the use of hydrogen-oxygen flame as the heat source, the quality of rutile single crystals grown by this method is still defective. The main reason is that the temperature distribution of the hydrogen-oxygen flame is difficult to control accurately, and the growth interface The impact of the airflow seriously affects the quality of the crystal; the axial temperature gradient below the crystal growth interface is large, and there is a large stress in the crystal; the dislocation density of the crystal is generally high

Method used

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  • Induction heating rutile single crystal growth furnace and method for preparing rutile
  • Induction heating rutile single crystal growth furnace and method for preparing rutile

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0033] see figure 1 , an induction heating rutile single crystal growth furnace, comprising: a stainless steel furnace shell, an upper cavity 11 and a lower cavity 12 separated by a ceramic plate in the furnace shell 1, a feed inlet 7 is arranged on the top of the furnace shell 1, and a A ceramic cover 2 is provided; the first heating device includes a conductive ceramic tube 8 placed in the upper cavity 11 as a heating section, the conductive ceramic tube 8 is a feed channel between the feed port 7 and the lower cavity 12, and the conductive ceramic tube 8 A quartz tube 3 is arranged on the outside, the first electromagne...

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Abstract

The present invention relates to an inductively heated rutile single crystal growth furnace and a method for preparing rutile by using the same, and belongs to the field of single crystal growth, so as to solve the problem that temperature distribution is difficult to be controlled accurately, an axial temperature gradient below a crystal growth interface is large, and high stress is prone to occur in the crystal. The growth furnace comprises: a furnace housing divided into an upper cavity and a lower cavity; a first heating apparatus, comprising a conductive ceramic tube that is disposed in the upper cavity and that serves as a heating section, wherein the conductive ceramic tube is a feed channel of a feed inlet and the lower cavity, the conductive ceramic tube is externally sleeved with a quartz tube, and a first electromagnetic induction coil is wound around the quartz tube; a growth chamber disposed in the lower cavity, wherein a growth region of the growth chamber is disposed below the first heating apparatus; and a second heating apparatus, comprising a second electromagnetic induction coil that is disposed in an insulation layer of the growth chamber under a crystal growth region, and forming a temperature keeping section. According to the growth furnace and the method provided by the present invention, temperature can be changed more accurately, and a temperature gradient of crystal growth can be adjusted according to needs at any time.

Description

technical field [0001] The invention relates to an optical crystal growth furnace, in particular to an induction heating rutile single crystal growth furnace and a method for preparing rutile, belonging to the field of single crystal growth. Background technique [0002] Rutile single crystals have attracted much attention due to their excellent physical and chemical properties. It is mainly manifested in high refractive index and birefringence, and good transmittance in the visible-infrared band. It is widely used in the preparation of optical isolators, optical ring devices and other devices in optical communication systems, as well as refraction and polarizers of electronic computers. , Nicolor prisms in polarizing microscopes, polarimeters, photometers, polarimeters, interferometric laser resolvers, colorimeters for chemical analysis, etc., are indispensable materials for modern national defense, aerospace and scientific research. [0003] At present, the methods for gr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/16
Inventor 唐坚刘旭东张瑞青毕孝国孙旭东牛微董颖男
Owner 沈阳鑫谱晶体科技有限公司
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