Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

N-type double-side battery and manufacturing method thereof

A double-sided battery and a manufacturing method technology, applied in the field of solar cells

Inactive Publication Date: 2016-03-16
SHANGHAI HANS NEW ENERGY TECH
View PDF6 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide an N-type double-sided battery and its manufacturing method for the problem of how to make doped and heavily doped while not damaging the N-type silicon wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type double-side battery and manufacturing method thereof
  • N-type double-side battery and manufacturing method thereof
  • N-type double-side battery and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Put the N-type silicon chip 110 into the texturizing additive for reaction, control the reaction temperature to 80°C, and the reaction time to 20 minutes, so that the first surface and the second surface of the N-type silicon chip 110 both have a pyramid-shaped textured structure, making The velvet additive is: the mass ratio of alkali, isopropanol, additive and water is 2.5:10:0.5:87;

[0061] Spin-coat 0.5 g of boron-containing silicon oxide solution on the first surface of the N-type silicon wafer 110, and dry it. After drying, the entire surface of the first surface is scanned by laser. The laser scanning condition is: 532nm green light pulse Laser, 18W power, 1.2m / s scanning speed and 50 micron spot diameter, form a p+ doped layer on the first surface, the sheet resistance of the p+ doped layer is 50Ω / □, and the thickness of the p+ doped layer is 0.4 micron, Next, the specific area on the first surface is repeatedly scanned by laser. The conditions for repeated las...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an N-type double-side battery and a manufacturing method thereof. The method includes: texturing processing of a first surface and a second surface of an N-type silicon chip is performed; a boron-doped source layer is formed on the first surface of the N-type silicon chip, a first laser parameter is employed to perform laser processing of the first surface, a p+ doping region is formed on the first surface, a second laser parameter is employed to perform laser processing of the first surface, and a p++ heavily-doped region is formed on the first surface; a phosphorus-doped source is coated on the second surface of the N-type silicon chip, a third laser parameter is employed to perform laser processing of the second surface, an n+ doping region is formed on the second surface, a fourth laser parameter is employed to perform laser processing of the second surface, and an n++ heavily-doped region is formed on the second surface; and passivation antireflection film layers and electrodes are prepared on the first surface in sequence. According to the N-type double-side battery and the manufacturing method thereof, the heat damage to the N-type silicon chip is reduced, and the conversion rate of the battery can be increased.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an N-type double-sided cell and a manufacturing method thereof. Background technique [0002] Solar cells are photoelectric semiconductor sheets that use sunlight to generate electricity directly. Among them, N-type solar cells have the advantages of long life, no light decay and high conversion efficiency, and the process flow of N-type solar cells is relatively simple, which is conducive to large-scale industrialization. . In addition, both sides of the N-type double-sided battery can receive sunlight, and the power generation capacity is relatively strong. [0003] Generally, in order to improve the battery conversion rate of N-type double-sided batteries, N-type double-sided batteries use high-temperature diffusion to prepare PN junctions, N+ high-low junctions, n++ heavily doped and p++ heavily doped, etc., which need to be processed twice. Tubular high temperature the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168Y02P70/50
Inventor 张松王培然刘超夏世伟季海晨
Owner SHANGHAI HANS NEW ENERGY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com