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N-type double-side battery and manufacturing method thereof

A double-sided battery and a manufacturing method technology, applied in the field of solar cells

Inactive Publication Date: 2016-03-16
SHANGHAI HANS NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide an N-type double-sided battery and its manufacturing method for the problem of how to make doped and heavily doped while not damaging the N-type silicon wafer.

Method used

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  • N-type double-side battery and manufacturing method thereof
  • N-type double-side battery and manufacturing method thereof
  • N-type double-side battery and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0060] Put the N-type silicon chip 110 into the texturizing additive for reaction, control the reaction temperature to 80°C, and the reaction time to 20 minutes, so that the first surface and the second surface of the N-type silicon chip 110 both have a pyramid-shaped textured structure, making The velvet additive is: the mass ratio of alkali, isopropanol, additive and water is 2.5:10:0.5:87;

[0061] Spin-coat 0.5 g of boron-containing silicon oxide solution on the first surface of the N-type silicon wafer 110, and dry it. After drying, the entire surface of the first surface is scanned by laser. The laser scanning condition is: 532nm green light pulse Laser, 18W power, 1.2m / s scanning speed and 50 micron spot diameter, form a p+ doped layer on the first surface, the sheet resistance of the p+ doped layer is 50Ω / □, and the thickness of the p+ doped layer is 0.4 micron, Next, the specific area on the first surface is repeatedly scanned by laser. The conditions for repeated las...

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Abstract

The invention relates to an N-type double-side battery and a manufacturing method thereof. The method includes: texturing processing of a first surface and a second surface of an N-type silicon chip is performed; a boron-doped source layer is formed on the first surface of the N-type silicon chip, a first laser parameter is employed to perform laser processing of the first surface, a p+ doping region is formed on the first surface, a second laser parameter is employed to perform laser processing of the first surface, and a p++ heavily-doped region is formed on the first surface; a phosphorus-doped source is coated on the second surface of the N-type silicon chip, a third laser parameter is employed to perform laser processing of the second surface, an n+ doping region is formed on the second surface, a fourth laser parameter is employed to perform laser processing of the second surface, and an n++ heavily-doped region is formed on the second surface; and passivation antireflection film layers and electrodes are prepared on the first surface in sequence. According to the N-type double-side battery and the manufacturing method thereof, the heat damage to the N-type silicon chip is reduced, and the conversion rate of the battery can be increased.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an N-type double-sided cell and a manufacturing method thereof. Background technique [0002] Solar cells are photoelectric semiconductor sheets that use sunlight to generate electricity directly. Among them, N-type solar cells have the advantages of long life, no light decay and high conversion efficiency, and the process flow of N-type solar cells is relatively simple, which is conducive to large-scale industrialization. . In addition, both sides of the N-type double-sided battery can receive sunlight, and the power generation capacity is relatively strong. [0003] Generally, in order to improve the battery conversion rate of N-type double-sided batteries, N-type double-sided batteries use high-temperature diffusion to prepare PN junctions, N+ high-low junctions, n++ heavily doped and p++ heavily doped, etc., which need to be processed twice. Tubular high temperature the...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168Y02P70/50
Inventor 张松王培然刘超夏世伟季海晨
Owner SHANGHAI HANS NEW ENERGY TECH
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