Method of producing a colored crystalline silicon cell
A technology of crystalline silicon cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of low conversion efficiency, inability to achieve ohmic contact, poor welding performance, etc., to achieve reliability satisfaction, improve Photoelectric conversion efficiency, the effect of improving solderability
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Embodiment 1
[0018] The manufacturing method of the colored crystalline silicon battery is to process the P-type polycrystalline silicon wafer (25pcs) after texturing, diffusion and etching according to the following process:
[0019] 1. PECVDSiH 4 : NH 3 The flow ratio is 1:3, and the surface of the silicon wafer is coated with a purple-red anti-reflection film with a thickness of 239nm;
[0020] 2. Use the commercially available grade MERCK12# to carry out chemical etching treatment, and the anti-reflection film in the printing area is etched to 60nm;
[0021] 3. Clean the colored silicon wafer with chemical corrosion in ultrasonic to remove the chemical corrosion and dry the silicon wafer;
[0022] 4. Regularly print the front and back electrodes and the back electric field, and use a screen with 85 sub-grid lines to print the front electrodes. After sintering, a group of purple colored cells is obtained.
[0023] Under the condition of AM1.5, 25°C, the electrical performance data of...
Embodiment 2
[0028] The manufacturing method of the colored crystalline silicon battery is to process the P-type polycrystalline silicon wafer (25pcs) after texturing, diffusion and etching according to the following process:
[0029] 1. PECVDSiH 4 : NH 3 The flow ratio is 1:4, and the surface of the silicon wafer is coated with a green anti-reflection film with a thickness of 273nm;
[0030] 2. Use the commercially available grade MERCK12# to carry out chemical etching treatment, and the anti-reflection film in the printing area is etched to 70nm;
[0031] 3. Clean the colored silicon wafer with chemical corrosion in ultrasonic to remove the chemical corrosion and dry the silicon wafer;
[0032] 4. Regularly print the front and back electrodes and the back electric field, and use a screen with 85 sub-grid lines to print the front electrodes. After sintering, a group of green colored cells is obtained.
[0033] Under the condition of AM1.5, 25°C, the electrical performance data of the t...
Embodiment 3
[0038] A method for manufacturing a colored crystalline silicon battery, using the following steps:
[0039] (1) Place the silicon wafer that has been processed by texturing, diffusion, and etching in the PECVD coating equipment, and adjust the SiH 4 : NH 3 The flow ratio of the flow rate is 1:2, and a color anti-reflection film with a thickness of 150nm is deposited on the silicon wafer at one time;
[0040] (2) The silicon wafer coated with the color anti-reflection film is chemically etched to accurately remove the color anti-reflection film in a specific area to a thickness of 100nm. The etchant covers a specific area of the silicon wafer and etches the silicon nitride in the area, accurately removes the color anti-reflection film in the specific area to a thickness of 100nm, and the screen line width of the printed chemical etchant is greater than that of the printed battery The grid line width of the front electrode is 5um, so as to ensure the accuracy of the etched ...
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