Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing zinc sulfide photoelectric film from zinc chloride

A photoelectric thin film and zinc sulfide technology, which is applied in the manufacture of circuits, electrical components, and final products, to achieve the effects of easy operation, low-cost large-scale industrial production, and low production costs

Inactive Publication Date: 2016-03-16
SHANDONG JIANZHU UNIV
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] In order to solve the existing problems in the preparation of zinc sulfide photoelectric thin films, the present invention has invented a method for preparing zinc sulfide photoelectric thin films with zinc chloride

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] a. Cleaning of the tin dioxide conductive glass substrate: clean the glass substrate as described above, and the size of the substrate is 20mm×20mm.

[0028] b. Divide 1.0 parts of C 6 h 5 Na 3 o 7 2H 2 O, 3.5 parts of ZnCl 2 , 65.0 parts of Na 2 S 2 o 3 ·5H 2 O was put into 2700.0 parts of distilled water to dissolve the substances in the solution.

[0029] c. Pour the above electrodeposition solution into a three-electrode device, use a saturated calomel electrode as a reference electrode, a platinum electrode as an auxiliary electrode, and tin dioxide conductive glass as a research electrode, and use a transistor potentiostat at a deposition potential of 2V Thin films were deposited at room temperature, and the deposition time was 30 min to obtain precursor thin film samples.

[0030]d. Place the precursor thin film sample on the support, add sublimated sulfur powder into the hydrazine hydrate, the precursor thin film sample is not in contact with the hydra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a zinc sulfide photoelectric film from zinc chloride, and belongs to the technical field of solar cell films. The method comprises the following steps: firstly, cleaning a tin dioxide conductive glass substrate; secondly, putting C6H5Na3O7.2H2O, ZnCl2 and Na2S2O3.5H2O into distilled water, obtaining a precursor film on the conductive glass substrate with an electrodeposition method, naturally drying, putting the dried precursor film into a tubular furnace in which hydrazine hydrate is added, enabling a precursor film sample not to be in contact with hydrazine hydrate, and performing heating in the sealed tubular furnace to vulcanize the precursor film, wherein sublimed sulfur powder is added in hydrazine hydrate; and finally, taking out the sample and performing drying to obtain the zinc sulfide film. The method does not need a high-vacuum condition and is low in instrument and equipment requirement, low in production cost, high in production efficiency and easy in operation. The obtained zinc sulfide film has relatively good continuity and uniformity, a main phase is a ZnS phase, and low-cost and large-scale industrial production can be realized.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation for solar cells, and in particular relates to a method for preparing zinc sulfide photoelectric thin films by using zinc chloride. Background technique [0002] With the development of society and economy, the total energy consumption in our country has increased sharply, the energy crisis and the pollution caused by traditional energy to the environment are becoming more and more serious. Therefore, the development and utilization of clean and environmentally friendly energy has become a major issue facing mankind. In order to make full use of solar energy, a clean, safe and environmentally friendly renewable resource, the research and development of solar cell materials have been paid more and more attention in recent years. [0003] In thin-film photovoltaic materials, ZnS is a group II-VI compound semiconductor with a zinc blende crystal structure and a direct transition energy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/0216H01L31/0224
CPCH01L31/0216H01L31/0224H01L31/18Y02P70/50
Inventor 刘科高徐勇许超
Owner SHANDONG JIANZHU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products