Semiconductor structure and method of forming same, method of processing semiconductor structure

Abstract

A semiconductor structure and a method for forming the semiconductor structure, and a method for processing the semiconductor structure, the method for forming the semiconductor structure includes: providing a wafer, the wafer has a first surface and a second surface opposite to the first surface; The device thin film is formed on the first surface of the wafer; the wafer is thinned from the second surface of the wafer, and the thinned wafer includes a first region and a second region, and the first region is along the length The axis of symmetry of the direction is the diameter of the wafer, and the length of the first region is the diameter of the wafer, and the second region is located on both sides of the first region; an image is formed on the second surface of the thinned wafer A mask layer, the patterned mask layer covers the first region and exposes part of the surface of the second region; using the patterned mask layer as a mask, the wafer is etched, and the second Several grooves are formed in the region, and part of the device thin film is exposed at the bottom of the grooves. The above method can reduce the chipping of the wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure, a forming method and a processing method thereof. Background technique [0002] As an interdisciplinary advanced manufacturing technology originated in the 1990s, micro-electromechanical systems (MEMS) are widely used to improve people's quality of life, improve people's living standards and enhance national strength. MEMS is a technology that uses the micro-processing technology of semiconductor integrated circuits to integrate sensors, brakes, and control circuits on tiny chips, also known as micro-nano technology. At present, it has been widely used in communication, automobile, optics, biology and other fields. In MEMS devices, quite a few components exist in the form of thin films with a thickness of several microns to hundreds of microns. [0003] Silicon-based MEMS technology is compatible with the manufacturing technology of modern inte...

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Problems solved by technology

[0004] In some special MEMS devices, MEMS devices need to be formed on thinner wafers. Generally, after the MEMS film is formed on the surface of ordinary silicon wafers, the wafers are thinned. After thinning, the wafers are easily deformed under external forces. even rupture, resulting in fragments

Moreover, some MEMS devices also need to be etched on the thinned wafer to form vias or grooves, making the wafer softer and easier to break

Especially in the subsequent wet process, under the action of the flow of the solution, the wafer is subjected to the impact of the flow of the solution, causing problems such as dumping, which is particularly easy to form fragments, resulting in the scrapping of the formed MEMS device, resulting in a decrease in yield and cost loss

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