Ultraviolet photovoltaic detector with ZnO nanorod and phenanthrene nano heterogeneous composite structure

A composite structure and ultraviolet light technology, applied in the field of preparation of ultraviolet photovoltaic detectors, can solve the problems of serious carrier recombination, low detection performance and sensitivity, and achieve good stability, improved detection performance and sensitivity, and efficient luminescence performance. Effect

Active Publication Date: 2016-03-23
KUNMING INST OF PHYSICS
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  • Description
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  • Application Information

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Problems solved by technology

However, there are a large number of vacancy trap states on the surface of ZnO nanorods, and the diffusion of electron-hole pairs generated when excited by ultraviolet light is affected by the surface depletion layer, and the carrier recombination is serious, resulting in the failure of ZnO nanorod-based ultraviolet photovoltaic detectors. Low detection performance and sensitivity

Method used

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  • Ultraviolet photovoltaic detector with ZnO nanorod and phenanthrene nano heterogeneous composite structure
  • Ultraviolet photovoltaic detector with ZnO nanorod and phenanthrene nano heterogeneous composite structure
  • Ultraviolet photovoltaic detector with ZnO nanorod and phenanthrene nano heterogeneous composite structure

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Embodiment 1

[0034] Embodiment 1: An ultraviolet photovoltaic detector with a heterogeneous composite structure of ZnO nanorods and phenanthrene nanometers, the base 2 is a glass sheet substrate; a 180nm thick high-performance material ITO is deposited on the glass sheet substrate as the positive electrode layer 3; the positive electrode The electrode layer 3 is spin-coated with a 200nm ZnO seed layer 4, and the ZnO nanorod array 5 with a diameter of 50-200nm and a length of 2-3 μm is epitaxially grown on the ZnO seed layer 4 by a hydrothermal method; The ethanol solution of the organic phenanthrene is placed on the ZnO nanorod array 5, and the substrate is dried to volatilize the ethanol to form the ZnO nanorod and the phenanthrene functional layer 6; Gold wires 8 are used to lead out the electrodes on the layer 6 to form the ultraviolet photovoltaic detector structure of the present invention.

[0035] The ultraviolet photovoltaic detector of the present invention is prepared by the foll...

Embodiment 2

[0045] Example 2: (1) Spin-coat ZnO seed solution on ITO with a homogenizer to obtain a uniform ZnO seed layer, and then anneal in an air atmosphere to obtain a ZnO seed layer with a thickness of about 200 nm; On the crystal layer, the oriented ZnO nanorod array is epitaxially grown by hydrothermal method to form a uniform ZnO nanorod array. The nanorods are 50-200nm in diameter and 2-3μm in length. Other steps are with embodiment 1.

Embodiment 3

[0046] Example 3: Spin-coat the ethanol solution of phenanthrene by spin coating with a homogenizer, drop 50 μL of the ethanol solution of phenanthrene to cover the substrate, adjust the speed of the homogenizer to 1000 rpm and rotate for 30 seconds, so that the ethanol solution of phenanthrene fully penetrates Put the substrate into the ZnO nanorod array, and then place the substrate on a heating plate at 80°C for 30 minutes, so that the ethanol solution will completely evaporate, and the phenanthrene will be coated on the surface of the ZnO nanorods, and a nano-heterogeneous composite structure of ZnO nanorods and phenanthrenes will be obtained.

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Abstract

The invention discloses an ultraviolet photovoltaic detector with a ZnO nanorod and phenanthrene nano heterogeneous composite structure, belongs to the field of semiconductor and nano photoelectronic devices, and especially relates to a preparation method for the ultraviolet photovoltaic detector with the ZnO nanorod and nano heterogeneous composite structure. The substrate material of the bottom layer of the detector is glass. ITO serves as one electrode, and completely covers a substrate. After conductive slurry is dropped, the electrode is led out through a wire. The remaining part, which does not serve as an electrode, of the ITO is covered by a ZnO seed crystal layer. The thickness of the ZnO seed crystal layer is about 200 nm. The ZnO seed crystal layer is an epitaxial growth ZnO nano rod array, and the surface of the ZnO nano rod array is wrapped by organic phenanthrene. The detector provided by the invention is low in cost, is easy to implement, is high in efficiency, is good in stability, and has great application potential in the field of army and for civil use.

Description

technical field [0001] The invention belongs to the field of semiconductors and nano-optoelectronic devices, and in particular relates to a method for preparing an ultraviolet photovoltaic detector with a heterogeneous composite structure of ZnO nanorods and phenanthrene nanometers. Background technique [0002] A photodetector is a device that converts optical radiation signals into electrical signals, and uses this feature to sense changes in the external environment. Ultraviolet light cannot be directly observed by human eyes, and has strong radiation ability. In order to prevent people from being directly irradiated by ultraviolet light, it is necessary to convert this ultraviolet light into a physical quantity that is easy to detect. An ultraviolet photovoltaic detector is a device that converts an invisible ultraviolet incident radiation signal into a detectable electrical signal. UV photovoltaic detectors have been widely used in the military for UV alarm and guidan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/60H10K30/152H10K2102/00Y02E10/549
Inventor 唐利斌姬荣斌项金钟程文涛
Owner KUNMING INST OF PHYSICS
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