Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound

一种抗蚀剂下层、化合物的技术，应用在形成该防反射膜的组合物领域，能够解决活性光线驻波的影响大问题等问题，达到广焦点深度裕量的效果

Active Publication Date: 2016-03-23
NISSAN CHEM CORP
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Along with this, the diffuse reflection of active light from the substrate and the influence of standing waves are major problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound
  • Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound
  • Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0078]The weight-average molecular weight shown in the following synthesis examples is the result of measurement by gel permeation chromatography (hereinafter abbreviated as GPC). For the measurement, a GPC apparatus manufactured by Toray Co., Ltd. was used, and the measurement conditions and the like are as follows. In addition, the degree of dispersion shown in the following synthesis examples was calculated from the measured weight average molecular weight and number average molecular weight.

[0079] GPC column: Shodex [registered trademark] Asahipak [registered trademark] (manufactured by Showa Denko Co., Ltd.)

[0080] Column temperature: 40°C

[0081] Solvent: N,N-Dimethylformamide (DMF)

[0082] Flow rate: 0.6ml / min

[0083] Standard sample: standard polystyrene sample (manufactured by Toray Co., Ltd.)

[0084] Detector: RI detector (manufactured by Toray Corporation, RI-8020)

Synthetic example 1

[0086] In a reaction vessel, 3 g of 1,3-diglycidyl-5,5-dimethylhydantoin, 0.71 g of resorcinol diglycidyl ether, 1.82 g of fumaric acid, ethyl triphenyl Bromination 0.29 g and 0.008 g of hydroquinone were added to 13.6 g of propylene glycol monomethyl ether and dissolved. After replacing the reaction vessel with nitrogen, the reaction was performed at 135° C. for 4 hours to obtain a polymer solution. The polymer solution did not become cloudy even when it was cooled to room temperature, and its solubility in propylene glycol monomethyl ether was good. As a result of GPC analysis, the obtained polymer corresponded to the formula (3-1), and the weight average molecular weight in terms of standard polystyrene was 6,730.

Synthetic example 2

[0088] In a reaction vessel, 3 g of 1,3-diglycidyl-5,5-dimethylhydantoin, 0.41 g of isophthalic acid, 1.16 g of fumaric acid, ethyl triphenyl bromide 0.23 g and 0.007 g of hydroquinone were added to 11.6 g of propylene glycol monomethyl ether and dissolved. After replacing the reaction vessel with nitrogen, the reaction was performed at 135° C. for 4 hours to obtain a polymer solution. The polymer solution did not become cloudy even when it was cooled to room temperature, and its solubility in propylene glycol monomethyl ether was good. As a result of GPC analysis, the obtained polymer corresponded to the formula (3-2), and the weight average molecular weight in terms of standard polystyrene was 8537.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
aperture sizeaaaaaaaaaa
reflectivityaaaaaaaaaa
Login to View More

Abstract

[Problem] To provide a resist underlayer film which has a wide focus position range within which a good resist shape can be achieved. [Solution] A resist underlayer film forming composition for lithography, which contains a linear polymer that is obtained by a reaction between a diepoxy group-containing compound (A) and a dicarboxyl group-containing compound (B). The linear polymer has structures represented by formulae (1), (2) and (3), said structures being derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B). It is preferable that the resist underlayer film forming composition for lithography contains a polymer that is obtained by a reaction between two diepoxy group-containing compounds (A) that respectively have structures of formula (1) and formula (2) and a dicarboxyl group-containing compound (B) that has a structure of formula (3), or a polymer that is obtained by a reaction between a diepoxy group-containing compound (A) that has a structure of formula (1) and two dicarboxyl group-containing compounds (B) that respectively have structures of formula (2) and formula (3).

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film. In detail, it relates to an anti-reflection film capable of reducing the reflection of light from a semiconductor substrate from exposure to a photoresist layer coated on a semiconductor substrate in a photolithography process for manufacturing a semiconductor device, and an antireflection film for forming the antireflection film. Composition of reflective film. Specifically, it relates to an antireflection film used in a photolithography process for manufacturing a semiconductor device by exposing and irradiating light with a wavelength of 193 nm or the like, and a composition for forming the antireflection film. Moreover, it is related with the formation method of the photoresist pattern using this antireflection film. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G59/42H01L21/027
CPCG03F7/091C08G59/1438C08G59/226C08G59/26C08G59/4207C08G63/58C08G63/6858C09D163/00C08L63/00C09D5/006C09D167/06H01L21/0276C08G59/42
Inventor 大西龙慈水落龙太西田登喜雄境田康志坂本力丸
Owner NISSAN CHEM CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com