Extreme ultraviolet recessed surface reflector coated film uniformity assessing method

Abstract

The invention discloses an extreme ultraviolet recessed surface reflector coated film uniformity assessing method belonging to the extreme ultraviolet optical technology application field. The method is characterized in that a film coating die, the shape of which is the same as the shape of the recessed surface reflector, can be processed, and by taking one point of the outer edge of the film coating die as the starting point, the points can be selected and the holes can be punched in the film coating die sequentially according to the helix shape, and the last intersection point between the helix and the radius of the starting point can be used as the terminal point, and then the points can be numbered according to the coordinate positions; the points can be selected and the holes can be punched in the radial straight line between the starting point and the terminal point, and then the points can be numbered according to the coordinate positions; quartz glass testing sample wafers are selected, and the ultrasonic cleaning, the slow-pulling and the dehydrating, and the alcohol drying of the testing sample wafers can be carried out, and then the testing sample wafers can be divided into two groups and are numbered respectively according to the helix sequence and the radial straight line sequence, and then can be attached to the hole positions; the extreme ultraviolet single-layer film can be disposed on the testing sample wafer; the XRD test of the testing sample wafers can be carried out sequentially according to the above mentioned sequences, and then the thickness of the extreme ultraviolet single-layer film can be analyzed under the same model parameter.

Description

technical field [0001] The invention relates to the application field of extreme ultraviolet optical technology, in particular to a method for evaluating coating uniformity of an extreme ultraviolet concave reflector. technical background [0002] Extreme Ultraviolet Lithography (EUVL) technology is a micro-nano processing technology that uses the EUV band, mainly the 13.5nm band, for photolithography. At present, EUVL technology has been able to realize the etching process of 7nm line width, and has the possibility of further reducing the etching line width. This is of great significance in the field of large-scale integrated circuit manufacturing, which can achieve greater density of component integration and lower energy consumption. The research on extreme ultraviolet optics related technologies has great social and economic value. [0003] Extreme ultraviolet lithography uses a light source with a wavelength of 10-14nm for illumination. Since almost all known optical m...

AI Technical Summary

Problems solved by technology

[0004] The general method for evaluating the coating uniformity of extreme ultraviolet mirrors is to place a large-sized mirror substrate directly below the magnetron sputtering target to coat at a certain height, and then test the film thickness distribution on the mirror substrate to obtain a multilayer film Thickness distribution; although this method is simple and direct, it is risky and inefficient in actual operation, and the coating substrate in the extreme ultraviolet band is very expensive, which will lead to high experimental costs

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