Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene LED chip and preparation method thereof

An LED chip and graphene technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor light transmittance and conductivity, and the inability to make GaN electrodes, and achieves low absorption, thin overall thickness, and high emission. rate effect

Active Publication Date: 2016-03-30
白德旭
View PDF5 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the GaN electrode of this patent cannot be made with a thinner thickness, so the light transmittance and conductivity are poor due to the excessive thickness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene LED chip and preparation method thereof
  • Graphene LED chip and preparation method thereof
  • Graphene LED chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Such as figure 1 As shown, the present invention provides a graphene LED chip, comprising a substrate 10, a graphene transparent lower electrode 21, a graphene layer 30 with a superlattice structure, a P-type semiconductor layer 31, an N-type semiconductor layer 32, and graphene transparent The upper electrode 22.

[0050] The graphene layer 30 with a superlattice structure is disposed between the graphene transparent lower electrode 21 and the P-type semiconductor layer 31 . The N-type semiconductor layer 32 is disposed on the P-type semiconductor layer 31 . The graphene transparent upper electrode 22 is disposed above the N-type semiconductor layer 32 . That is, the N-type semiconductor layer 32 is disposed between the P-type semiconductor layer 31 and the graphene transparent upper electrode 22 .

[0051] The substrate 10 is a glass substrate, a quartz substrate, a silicon substrate, a plastic substrate, and a substrate composed of a combination of materials such ...

Embodiment 2

[0059] This embodiment provides a method for preparing a graphene LED chip.

[0060] Firstly, a graphene film is prepared. A high-purity graphite powder layer is coated on a quartz sheet, and the quartz sheet coated with the graphite powder layer is placed in a tubular boiler. The vacuum degree of the boiler is about 10 -5 Thor. The quartz sheet coated with the graphite powder layer is heat-treated at a temperature of 1200° C., so that the graphite powder layer forms a graphene layer. After the boiler is slowly cooled, the graphene layer coated on the quartz sheet can be torn off from the cooled quartz sheet to obtain a graphene layer containing stacked multilayer graphene films.

[0061] Then prepare the graphene LED chip. Such as Figure 7 Shown, the step of preparing graphene LED chip is:

[0062] S11: immersing the graphene layer containing the stacked multi-layer graphene film in an aqueous sulfuric acid solution to separate layers of the stacked graphene film to ob...

Embodiment 3

[0080] This embodiment is a further improvement on any of the foregoing embodiments, and only the improved part will be described.

[0081] According to a preferred embodiment, the graphene layer with superlattice structure comprises at least one graphene nanoribbon. The graphene layer with the superlattice structure is connected with the graphene transparent upper electrode and the P-type semiconductor layer and has a band shape.

[0082] The graphene nanoribbon layer 30a has at least one graphene nanoribbon. Opposite edges of the graphene nanoribbons may have a zigzag shape. The graphene nanoribbons have periodically varying widths along the longitudinal direction. figure 2 Three nanoribbons 301a, 302a and 303a in graphene nanoribbon layer 30a are shown. Opposite edges of the graphene nanoribbon 301a each have a zigzag shape. The graphene nanoribbons 301a have periodically varying widths along the longitudinal direction.

[0083] The present invention is not limited th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a graphene LED chip. The method comprises the following steps: drying a graphene film which is soaked by a sulfuric acid aqueous solution and coats a substrate, and then forming a lower graphene transparent electrode; manufacturing a graphene layer which comprises at least one graphene nanoribbon and has a superlattice structure by an atomic force microscope, or preparing the graphene layer which is formed by graphene quantum dots and has the superlattice structure in oxidation-reduction and dialysis manners, and putting the graphene layer on the lower graphene transparent electrode; sequentially arranging a P-type semiconductor layer and an N-type semiconductor layer on the graphene layer; and arranging a graphene transparent electrode on the N-type semiconductor layer as an upper graphene transparent electrode, and arranging the N-type semiconductor layer between the P-type semiconductor layer and the upper graphene transparent electrode formed by the graphene transparent electrode. With graphene with the superlattice structure as a luminous layer, a ray is not easily absorbed, and the graphene LED chip has relatively high emissivity.

Description

technical field [0001] The invention relates to the technical field of LED chips, in particular to a graphene LED chip and a preparation method thereof. Background technique [0002] LEDs emit light by spontaneous radiative recombination of carriers injected into the active region. LED has the advantages of safety and reliability, energy saving and environmental protection, long life, fast response, small size, and rich color gamut, so LED has been widely used in solid-state lighting, display screens, traffic lights and other fields. The existing LED chips are mainly made by MOCVD method, epitaxial growth on sapphire or silicon carbide substrates. With the continuous increase of LED power, the problem of heat dissipation becomes more and more prominent. Traditional LEDs are non-conductive due to sapphire. Therefore, the electrodes can only be made on the same side, which causes the current congestion effect and reduces the life of the LED. Moreover, due to the poor thermal ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/36H01L33/40H01L33/04H01L33/02H01L33/00
CPCH01L33/005H01L33/02H01L33/04H01L33/36H01L33/40H01L33/42
Inventor 白德旭
Owner 白德旭
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com