Graphene LED chip and preparation method thereof

An LED chip and graphene technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor light transmittance and conductivity, and the inability to make GaN electrodes, and achieves low absorption, thin overall thickness, and high emission. rate effect

Active Publication Date: 2016-03-30
白德旭
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the GaN electrode of this patent cannot be made with a thinner thickness,

Method used

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  • Graphene LED chip and preparation method thereof
  • Graphene LED chip and preparation method thereof
  • Graphene LED chip and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0048] Example one

[0049] Such as figure 1 As shown, the present invention provides a graphene LED chip, including a substrate 10, a graphene transparent bottom electrode 21, a graphene layer 30 having a superlattice structure, a P-type semiconductor layer 31, an N-type semiconductor layer 32, and graphene transparent Upper electrode 22.

[0050] The graphene layer 30 having a superlattice structure is disposed between the graphene transparent lower electrode 21 and the P-type semiconductor layer 31. The N-type semiconductor layer 32 is disposed on the P-type semiconductor layer 31. The graphene transparent upper electrode 22 is disposed above the N-type semiconductor layer 32. That is, the N-type semiconductor layer 32 is provided between the P-type semiconductor layer 31 and the graphene transparent upper electrode 22.

[0051] The substrate 10 is a glass substrate, a quartz substrate, a silicon substrate, a plastic substrate, and a substrate formed by combining materials such...

Example Embodiment

[0058] Example two

[0059] This embodiment provides a method for preparing an ink-based LED chip.

[0060] First, the graphene film is prepared. A high-purity graphite powder layer is formed by coating on a quartz plate, and the quartz plate coated with the graphite powder layer is placed in a tubular boiler. The vacuum of the boiler is about 10 -5 Tor. The quartz sheet coated with the graphite powder layer is heat-treated at a temperature of 1200° C. to make the graphite powder layer form a graphene layer. After the boiler is slowly cooled, the graphene layer coated on the quartz plate can be peeled off from the cooled quartz plate to obtain a graphene layer containing laminated multilayer graphene films.

[0061] Then the graphene LED chip is prepared. Such as Figure 7 As shown, the steps for preparing a graphene LED chip are:

[0062] S11: Immerse the graphene layer containing the laminated graphene film in an aqueous sulfuric acid solution to separate the layers of the lamin...

Example Embodiment

[0079] Example three

[0080] This embodiment is a further improvement of any of the foregoing embodiments, and only the improved part is described.

[0081] According to a preferred embodiment, the graphene layer having a superlattice structure includes at least one graphene nanoribbon. The graphene layer having a superlattice structure is connected to the graphene transparent upper electrode and the P-type semiconductor layer and has a band shape.

[0082] The graphene nanoribbon layer 30a has at least one graphene nanoribbon. The opposite edges of the graphene nanoribbons can all have a zigzag shape. The graphene nanoribbons have a periodically varying width in the longitudinal direction. figure 2 Three nanoribbons 301a, 302a, and 303a in the graphene nanoribbon layer 30a are shown. The opposite edges of the graphene nanoribbons 301a all have a zigzag shape. The graphene nanoribbons 301a have a periodically varying width in the longitudinal direction.

[0083] The present inve...

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Abstract

The invention relates to a preparation method of a graphene LED chip. The method comprises the following steps: drying a graphene film which is soaked by a sulfuric acid aqueous solution and coats a substrate, and then forming a lower graphene transparent electrode; manufacturing a graphene layer which comprises at least one graphene nanoribbon and has a superlattice structure by an atomic force microscope, or preparing the graphene layer which is formed by graphene quantum dots and has the superlattice structure in oxidation-reduction and dialysis manners, and putting the graphene layer on the lower graphene transparent electrode; sequentially arranging a P-type semiconductor layer and an N-type semiconductor layer on the graphene layer; and arranging a graphene transparent electrode on the N-type semiconductor layer as an upper graphene transparent electrode, and arranging the N-type semiconductor layer between the P-type semiconductor layer and the upper graphene transparent electrode formed by the graphene transparent electrode. With graphene with the superlattice structure as a luminous layer, a ray is not easily absorbed, and the graphene LED chip has relatively high emissivity.

Description

technical field [0001] The invention relates to the technical field of LED chips, in particular to a graphene LED chip and a preparation method thereof. Background technique [0002] LEDs emit light by spontaneous radiative recombination of carriers injected into the active region. LED has the advantages of safety and reliability, energy saving and environmental protection, long life, fast response, small size, and rich color gamut, so LED has been widely used in solid-state lighting, display screens, traffic lights and other fields. The existing LED chips are mainly made by MOCVD method, epitaxial growth on sapphire or silicon carbide substrates. With the continuous increase of LED power, the problem of heat dissipation becomes more and more prominent. Traditional LEDs are non-conductive due to sapphire. Therefore, the electrodes can only be made on the same side, which causes the current congestion effect and reduces the life of the LED. Moreover, due to the poor thermal ...

Claims

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Application Information

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IPC IPC(8): H01L33/36H01L33/40H01L33/04H01L33/02H01L33/00
CPCH01L33/005H01L33/02H01L33/04H01L33/36H01L33/40H01L33/42
Inventor 白德旭
Owner 白德旭
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