Three-dimensional nanometer pitch sample plate and preparation method thereof

Abstract

The invention relates to a three-dimensional nanometer pitch sample plate and a preparation method thereof, and belongs to the technical field of nanometer metering. The three-dimensional nanometer pitch sample plate is characterized in that Si (100) single-crystal structure substrate materials and high-purity film forming Cr materials (with the purity larger than 99%) are selected, a molecular beam epitaxy technology is adopted for achieving stratified structure growth of Cr atoms on a Si (100) substrate, a corresponding nanometer pitch structure is obtained through an etching technology, then, epitaxial growth is carried out again, and research of the pitch sample plate is achieved. The problems that an existing nanometer pitch sample plate preparation method is not easy to control, and the preparation method is poor in reproducibility are solved at the atomic level. In addition, due to the fact that the film forming atoms grow in a stratified structure mode, the etched surface interface structure can be preserved, the etched structure depth can also be kept, the influences of etching on the lateral pitch structure are eliminated, the problem that the Z-direction etching is uncontrollable is solved, nanoscale control of the research process over the sample plate three-dimensional pitch is achieved, and a feasible research method is provided for nanometer pitch standard sample plates in China.

Description

technical field [0001] The invention relates to a three-dimensional nano-pitch template and a preparation method thereof, belonging to the technical field of nanometer measurement. Background technique [0002] Nano-scale standard template is an important transfer medium to realize the transfer of nano-size from national standard devices to actual production and manufacturing, while nano-pitch standard template is used for the measurement and control of nano-scale line width, pitch and step height, and related Calibration and traceability of nanometer measuring instruments, etc. Due to the lack of standard physical design and preparation technology research, my country has not yet developed a nano-pitch standard template that can be used for value transfer, which has seriously affected my country's integrated circuits, ultra-finishing, nano-machines and MEMS technologies. With the development of related technologies and industries of nanotechnology and international competit...

AI Technical Summary

Problems solved by technology

The nano-pitch template prepared by micro-nano processing technology has great randomness in the control of the Z direction, poor reproducibility, and strict environmental requirements and harsh processing conditions; Its mean pitch is very accurate (with a relative uncertainty of 10 -5 ), which can be directly traced back to the absolute atomic transition frequency, but the deposition line is relatively thick, and a single measurement on a single line pair may produce great uncertainty; while silicon wafers deposited with multi-layer films are bonded by dicing The pitch sample obtained by the method, the two diced silicon wafers cannot achieve atomic-level sealing, and the surface morphology of the pitch sample cannot be controlled, which cannot meet the needs of the value transfer of the pitch sample

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