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A high-yield quaternary chalcogenide semiconductor material and its preparation method and application

A technology of chalcogenides and semiconductors, applied in antimony compounds, semiconductor devices, selenium/tellurium compounds, etc., to achieve the effects of high yield, low cost of raw materials, and mild reaction conditions

Inactive Publication Date: 2017-11-03
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although hydrazine has been repeatedly used in the control of binary and ternary chalcogenides, its use as a solvent to grow quaternary chalcogenides is still a relatively blank field.

Method used

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  • A high-yield quaternary chalcogenide semiconductor material and its preparation method and application
  • A high-yield quaternary chalcogenide semiconductor material and its preparation method and application
  • A high-yield quaternary chalcogenide semiconductor material and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0031] BaCuSbS 3 crystals. Weigh the initial raw material Ba(CH 3 COO) 2 1.5mmol (0.383g), Cu 1.0mmol (0.064g), Sb 2 S 3Put 0.5mmol (0.170g) and S 3.0mmol (0.064g) into a hydrothermal kettle, then add hydrazine hydrate 3mL, and place the hydrothermal kettle at 160°C for 7 days. The product was washed twice with distilled water and absolute ethanol respectively to obtain red blocky crystals with a yield of 10%. EDX elemental analysis shows that the crystals only contain four elements: Ba, Cu, Sb, and S, and the content ratio of each element is about 1:1:1:3.

Embodiment 2

[0033] BaCuSbS 3 crystals. Weigh the initial raw material Ba(CH 3 COO) 2 1.0mmol (0.255g), KOH 1.0mmol (0.056g), Cu 1.0mmol (0.064g), Sb 2 S 3 Put 0.5mmol (0.170g) and S 2.0mmol (0.064g) into a hydrothermal kettle, then add hydrazine hydrate 4mL, and place the hydrothermal kettle at 160°C for 7 days. The product was washed twice with distilled water and absolute ethanol to obtain pure red blocky crystals. EDX elemental analysis shows that the crystal contains only four elements: Ba, Cu, Sb, and S, and the content ratio of each element is about 1:1:1:3 (see image 3 ). According to single crystal X-ray diffraction analysis, the crystal composition formula is BaCuSbS 3 , consistent with the EDX elemental analysis results, belonging to orthorhombic crystal system, Pbam space group, unit cell parameters α=90°, β=90°, γ=90°, Z=8,D c =4.590g / cm 3 , the crystal structure as Figure 5 shown. Carry out XRD test to crystal powder, the result is as follows Image 6 show...

Embodiment 3

[0035] BaCuSbS 3 crystals. Weigh the initial raw material Ba(CH 3 COO) 2 1.0mmol (0.255g), KOH 1.0mmol (0.056g), Cu 1.0mmol (0.064g), Sb 2 S 3 Put 0.5mmol (0.170g) and S 2.0mmol (0.064g) into a hydrothermal kettle, then add hydrazine hydrate 4mL, and place the hydrothermal kettle at 160°C for 2 days. The product was washed twice with distilled water and absolute ethanol to obtain pure red blocky crystals. EDX elemental analysis shows that the crystals only contain four elements: Ba, Cu, Sb, and S, and the content ratio of each element is about 1:1:1:3.

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Abstract

The invention discloses a high-yield quaternary chalcogenide semiconductor material and its preparation method and use. A barium salt, copper, a binary solid solution Sb2Q3(Q=S, Se) and simple substance Q as raw materials in hydrazine hydrate as a solvent undergo a reaction in an oven at a temperature of 160 DEG C for 2-7 days to produce the quaternary chalcogenide semiconductor material. The high-yield quaternary chalcogenide semiconductor material has a chemical formula of BaCuSbS3 or BaCuSbSe3. The preparation method has the advantages of high synthesis yield, simple processes, simple raw materials, low cost, mild reaction conditions and low synthesis temperature. The preparation method can produce the pure quaternary chalcogenide semiconductor material BaCuSbS3, has a BaCuSbSe3 yield of less than or equal to 70%, realizes high chemical purity and can be used for preparation of an optical semiconductor device or a solar cell transition layer material.

Description

technical field [0001] The invention belongs to the field of inorganic semiconductor materials, and in particular relates to a high-yield quaternary chalcogen compound semiconductor material and its preparation method and application. Background technique [0002] The physical and chemical properties of materials depend on their composition and structure. Due to their rich structural features, chalcogenides have great application prospects in the fields of ion exchange, photocatalysis, and nonlinear optics. Among many chalcogenides, antimony chalcogenides have very rich structure types. Its basic building block SbQ x (x=3,4,5) have unique structural chemistry due to the presence of the active 5s lone pair of electrons. The stereochemical effects of the lone pair of electrons and the different coordination numbers of the sulfur atom of Sb(III) can produce a variety of different structural compositions. Using different cations as structure-directing agents, [Sb(III)Q] 3- ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/26C01G30/00C01B19/00
CPCC01B19/002C01G30/002C01P2002/30C01P2002/72C01P2002/77C01P2002/84C01P2002/85C01P2004/03C01P2004/30
Inventor 刘毅刘畅侯佩佩郑雪绒沈亚英
Owner ZHEJIANG UNIV