Silicon-on-insulator (SOI) dual-port static random access memory (SRAM) unit and fabrication method thereof

Abstract

The invention provides a silicon-on-insulator (SOR) dual-port static random access memory (SRAM) unit and a fabrication method thereof. The unit comprises a first phase inverter, a second phase inverter and an acquisition tube, wherein the first phase inverter comprises a first P-channel metal oxide semiconductor (PMOS) transistor and a first N-channel metal oxide semiconductor (NMOS) transistor, the second phase inverter comprises a second PMOS transistor and a second NMOS transistor, and the acquisition tube comprises a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor and a sixth NMOS transistor. In the SRAM unit provided by the invention, the four transistors forming the first phase inverter and the second phase inverter all adopt L-shaped gates, and heavy doping body contact regions are arranged on outside regions of bending angles of the L-shaped gates. By the SRAM unit, power consumption leakage caused by a floating body effect in a PD SOI device and a parasitic triode effect and the threshold voltage drift of the transistor can be effectively prevented on the condition of sacrificing relatively small unit area, and the noise resistant ability of the unit is improved; according to the fabrication process, an extra mask is not introduced, and the fabrication process is completely compatible with a conventional logic process; and the interior of the unit adopts a central symmetrical structure, the matching of the size, the threshold voltage and the like of the MOS transistors are promoted, an array is further favorably formed, and a fully-customized SRAM chip is convenient.

Description

technical field [0001] The invention belongs to the field of memory design and production, and relates to an SOI dual-port SRAM unit and a production method thereof. Background technique [0002] Since the invention of SOI technology in the 1980s, it has small parasitic capacitance, low power consumption, fast speed and natural anti-Single-Event-Latchup (SEL) ability compared with ordinary bulk silicon technology, making SOI The technology is very suitable for working in System-on-Chips (SoC), low power consumption and radiation resistance; in addition, Static Random Access Memory (SRAM) is widely used in consumer electronics, automotive electronics, processor level Cache and L2 cache; therefore, applying SOI technology to SRAM design has certain advantages. [0003] According to the degree of depletion of the MOS tube body region, SOI can be further divided into fully depleted (Full-Depleted, FD) SOI and partially depleted (Partially-Depleted, FD) SOI. For partially deple...

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of SOI dual-port SRAM unit and manufacturing method thereof, be used to solve SOI dual-port SRAM unit occupying a large area, poor stability, power leakage in the prior art The problem of high power consumption and weak anti-noise ability

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