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A resistive variable memory based on multi-element metal oxide film and its preparation method

A technology of oxide film and multiple metals, applied in the field of memory, can solve the problems of high cost and low switching voltage, and achieve the effect of improving performance, low switching voltage and reducing cost

Inactive Publication Date: 2017-10-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a resistive variable memory based on a multi-element metal oxide film and a preparation method thereof. The resistive variable memory of the present invention has a high switching ratio, a low switching voltage, stable retention characteristics and anti-fatigue characteristics; It can effectively solve the problem of high cost of the current process preparation, and can completely realize mass production

Method used

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  • A resistive variable memory based on multi-element metal oxide film and its preparation method
  • A resistive variable memory based on multi-element metal oxide film and its preparation method

Examples

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Effect test

Embodiment 1

[0023] 1. Clean the substrate: select polyimide (PI) as the substrate, scrub the substrate with alcohol to remove organic impurities, rinse the substrate with deionized water several times, and then dry it with ordinary nitrogen, repeat the above steps The steps are repeated until the substrate is clean and ready for use.

[0024] 2. Preparation of resistive memory based on CuGaZnO

[0025] 1) Prepare the bottom electrode: in the chamber of the RF magnetron sputtering coating system, select ZnO doped with 2at% Al as the target material, install it on the target stage, and place the quartz substrate on the substrate stage; The chamber is evacuated to 3.3 x 10 -3 Pa, and then flow argon gas with a flow rate of 80 sccm, set the substrate temperature at 300° C., and sputter for 2 hours at a power of 50 W to form a bottom electrode.

[0026] 2) Preparation of the resistive switch layer: take out the prepared bottom electrode substrate, and paste a mask on one side of the substrat...

Embodiment 2

[0029] 1. Clean the substrate: select polyimide (PI) as the substrate, scrub the substrate with alcohol to remove organic impurities, rinse the substrate with deionized water several times, and then dry it with ordinary nitrogen, repeat the above steps The steps are repeated until the substrate is clean and ready for use.

[0030] 2. Preparation of resistive memory based on CuGaZnO

[0031] 1) Prepare the bottom electrode: in the chamber of the RF magnetron sputtering coating system, select ZnO doped with 2at% Al as the target material, install it on the target stage, and place the quartz substrate on the substrate stage; The chamber is evacuated to 3.3 x 10 -3 Pa, and then flow argon gas with a flow rate of 80 sccm, set the substrate temperature at 100° C., and sputter for 2 hours at a power of 50 W to form a bottom electrode.

[0032] 2) Preparation of the resistive switch layer: take out the prepared bottom electrode substrate, and paste a mask on one side of the substrat...

Embodiment 3

[0035] Clean the substrate: select polyimide (PI) as the substrate, scrub the substrate with alcohol to remove organic impurities, rinse the substrate with deionized water several times, and then dry it with ordinary nitrogen, repeat the above steps for more Repeat until the substrate is clean before use.

[0036] 2. Preparation of resistive memory based on CuGaZnO

[0037] 1) Prepare the bottom electrode: in the chamber of the RF magnetron sputtering coating system, select ZnO doped with 2at% Al as the target material, install it on the target stage, and place the quartz substrate on the substrate stage; The chamber is evacuated to 3.3 x 10 -3 Pa, and then flow argon gas with a flow rate of 80 sccm, set the substrate temperature at 200° C., and sputter for 2 hours at a power of 50 W to form a bottom electrode.

[0038] 2) Preparation of the resistive switch layer: take out the prepared bottom electrode substrate, and paste a mask on one side of the substrate with aluminum f...

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Abstract

The invention discloses a resistive variable memory based on a multi-element metal oxide thin film and a preparation method thereof, belonging to the field of memory technology. The present invention is a structure in which a bottom electrode layer, a resistive layer and a top electrode layer are sequentially integrated on the substrate, the material of the bottom electrode is ZnO doped with 2at% Al, the material of the resistive layer is CuGaZnO, and the top electrode The material is Cu. The preparation method of the present invention comprises the following steps: first adopting the radio frequency magnetron sputtering method to prepare a bottom electrode on the substrate, placing a metal mask on the bottom electrode layer, and then preparing a CuGaZnO thin film on it to form a resistive variable layer; finally A vacuum coating technique is adopted to prepare a Cu top electrode on the CuGaZnO thin film, thereby forming a structure of bottom electrode-resistive layer-top electrode. The resistive variable memory of the present invention has high switching ratio, low switching voltage, stable retention characteristics and anti-fatigue characteristics; effectively solves the problem of high cost of resistive variable layer materials in the preparation process; the preparation process has strong portability, and has It is beneficial to realize fully transparent devices.

Description

technical field [0001] The invention belongs to the technical field of storage devices, and in particular relates to a resistive storage device based on a multi-element metal oxide thin film and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of semiconductor technology, the size of semiconductor memory is getting smaller and smaller, and the storage capacity is getting bigger and bigger. However, with the improvement of device integration, traditional Flash memory encounters more stringent physical limitations, so people have been looking for new non-volatile memory to replace traditional Flash memory. New types of non-volatile memories such as phase change memory, resistive change memory, ferroelectric memory and magnetic random access memory have attracted extensive research. Among them, resistive memory has become a research hotspot due to its advantages. [0003] An important component of a resistive memory (RRAM...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/883H10N70/026H10N70/826
Inventor 韦敏邓意峰邓宏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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