Methylbenzene gas sensor based on alpha-Fe2O3/SnO2 heterostructure nanowire array and preparation method of methylbenzene gas sensor

A nanowire array and gas sensor technology, applied in the direction of material resistance, can solve the problem of high working temperature of gas sensitive materials

Active Publication Date: 2016-05-04
JILIN UNIV
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Problems solved by technology

As an N-type oxide semiconductor, SnO 2 and α-Fe 2 o 3 Has excellent chemical and electrical properties, but the operating temperature of the two semiconductor gas-sensing materials is generally high

Method used

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  • Methylbenzene gas sensor based on alpha-Fe2O3/SnO2 heterostructure nanowire array and preparation method of methylbenzene gas sensor
  • Methylbenzene gas sensor based on alpha-Fe2O3/SnO2 heterostructure nanowire array and preparation method of methylbenzene gas sensor
  • Methylbenzene gas sensor based on alpha-Fe2O3/SnO2 heterostructure nanowire array and preparation method of methylbenzene gas sensor

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Embodiment 1

[0033] Preparation of SnO with Fe:Sn molar ratio of 1:125 2 Nanowire Arrays and α-Fe 2 o 3 The toluene gas sensor of nanorod composite N-N junction heterojunction structure nanomaterials, the specific manufacturing process is as follows:

[0034] 1. First, 1.75g ​​of SnCl 4 ·5H 2 O. 100 μL of hydrochloric acid with a concentration of 0.2M was added to 15 mL of deionized water in turn, and stirred for 15 min until it was completely dissolved;

[0035] 2. Pour the solution of step 1 into an ultrasonic spray reaction container, and then place a Pt-coated silicon wafer (Pt-plated on a silicon wafer by vacuum evaporation technology) in a quartz tube. Using an ultrasonic atomization system, the solution in step 1 is dispersed into mist-like droplets of small molecules by ultrasonic waves, and then nitrogen is used as a carrier gas, and the atomized small molecules are brought into the quartz tube of the high-temperature reaction furnace by the carrier gas, at 350 Ultrasonic spr...

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Abstract

The invention discloses a methylbenzene gas sensor based on an alpha-Fe2O3/SnO2 heterostructure nanowire array and a preparation method of the methylbenzene gas sensor, and belongs to the technical field of gas sensors. The device is of a flat plate structure, and is composed of two separated copper-gold alloy probes (serving as test electrodes), a sensitive material thin film growing on a Pt-plated silicon wafer, and a mini-type high-temperature ceramic heating piece on the back face of the silicon wafer. The sensor has the advantages of being high in integration level, simple in structure, low in price, small in size, firm, durable and capable of being produced on a large scale. In addition, the test result of the gas-sensitive characteristic shows that the sensor can detect methylbenzene at low working temperature and has extremely-good long-term stability, and therefore the methylbenzene gas sensor can have important application prospects on the aspects of methylbenzene leakage detecting and alarming in industrial production.

Description

technical field [0001] The invention belongs to the technical field of oxide semiconductor gas sensors, in particular to a sensor based on SnO 2 Nanowire Arrays and α-Fe 2 o 3 Nanorod composite N-N heterojunction nanomaterial toluene gas sensor and preparation method thereof. Background technique [0002] With the development of information technology in the future, sensors, as a means of obtaining information, will be at the forefront of information technology development and will receive extensive attention and commercial applications. In recent years, the aggravation of atmospheric environmental pollution, frequent occurrence of industrial / family safety accidents, poor quality of food / drugs, and urgent needs in the fields of medical care, social welfare, fossil energy, military industry, and aviation / aerospace. Although great progress has been made in the research of oxide semiconductor gas sensors, in order to meet their application requirements in various detection f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04
CPCG01N27/04
Inventor 卢革宇王天双孙鹏刘凤敏梁喜双孙彦峰
Owner JILIN UNIV
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