A kind of soi single-port sram unit and its manufacturing method

Abstract

The present invention provides an SOI single-port SRAM unit and a manufacturing method thereof. The unit comprises: a first inverter, composed of a first PMOS transistor and a first NMOS transistor; a second inverter, composed of a second PMOS transistor and a second PMOS transistor. The second NMOS transistor is composed of; the acquisition transistor is composed of the third and fourth NMOS transistors. In the SRAM unit of the present invention, the four transistors constituting the first inverter and the second inverter all use L-shaped gates, and the area outside the bending angle of the L-shaped gates is provided with heavily doped body contact regions. The invention can effectively suppress the floating body effect in the PD SOI device and the leakage power caused by the parasitic triode effect and the transistor threshold voltage drift under the condition of sacrificing a small unit area, and improve the anti-noise ability of the unit. Moreover, the manufacturing process of the present invention does not introduce additional masks, and is fully compatible with existing logic processes. The unit adopts a centrosymmetric structure, which not only facilitates the matching of the size and threshold voltage of the MOS transistor, but also facilitates the formation of an array, which is convenient for fully customized SRAM. chip.

Description

technical field [0001] The invention belongs to the field of memory design and production, and relates to an SOI single-port SRAM unit and a production method thereof. Background technique [0002] Since the invention of SOI technology in the 1980s, it has small parasitic capacitance, low power consumption, fast speed and natural anti-Single-Event-Latchup (SEL) ability compared with ordinary bulk silicon technology, making SOI The technology is very suitable for working in System-on-Chips (SoC), low power consumption and radiation resistance; in addition, Static Random Access Memory (SRAM) is widely used in consumer electronics, automotive electronics, processing Therefore, applying SOI technology to SRAM design has certain advantages. [0003] According to the degree of depletion of the MOS tube body region, SOI can be further divided into fully depleted (Full-Depleted, FD) SOI and partially depleted (Partially-Depleted, FD) SOI. For partially depleted SOI technology, bec...

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of SOI single-port SRAM unit and manufacturing method thereof, be used to solve SOI single-port SRAM unit occupying a large area, poor stability, power leakage in the prior art The problem of high power consumption and weak anti-noise ability

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