Preparation method for solar cell and solar cell prepared by same
A technology of solar cells and silicon wafers, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low photoelectric conversion efficiency of solar cells and the development of solar cells with low photoelectric conversion rates, and achieves easy industrial production, good effect, and method simple effect
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[0025] The invention provides a method for preparing a solar cell. The method comprises: putting a boron-doped silicon wafer into a solution of rare earth halides and performing an impregnation reaction at a temperature of 150-300 degrees Celsius for 12-120 hours in an airtight environment to obtain silicon doped with boron and rare earths. The silicon wafer doped with boron and rare earth is subjected to phosphorous diffusion to obtain a PN junction silicon wafer doped with rare earth; the solar cell is formed by combining the PN junction silicon wafer doped with rare earth with a positive electrode and a negative electrode.
[0026] The photoelectric conversion efficiency, that is, the incident monochromatic photon-electron conversion efficiency, is defined as the ratio of the number Ne of electrons generated in the external circuit per unit time to the number Np of incident monochromatic photons per unit time. The performance of the solar cell is mainly determined by the pho...
Embodiment 1
[0036] According to the mass ratio of 1:0.5, put the boron-doped silicon chip into the solution of lanthanum chloride with a mass fraction of 1%, and carry out the impregnation reaction at 150 degrees Celsius for 12 hours in a closed reaction kettle to obtain boron-doped rare earth silicon slice; the silicon slice doped with boron and rare earth is carried out phosphorus diffusion at 650 degrees Celsius for 1 hour to obtain a PN junction silicon slice doped with rare earth; the positive electrode and silver electrode of the PN junction silicon slice doped with rare earth are connected The negative electrode constitutes the back contact solar cell 1, and the photoelectric conversion efficiency of the solar cell 1 is 16%.
Embodiment 2
[0038]According to the mass ratio of 1:10, put the boron-doped silicon chip into the solution of cerium chloride with a mass fraction of 5%, and carry out the impregnation reaction at 300 degrees Celsius for 120 hours in a closed reaction kettle to obtain boron-doped rare earth silicon slice; the boron-doped and rare earth-doped silicon slice was subjected to phosphorus diffusion at 850 degrees Celsius for 12 hours to obtain a rare-earth-doped PN junction silicon slice; The negative electrode constitutes the back contact solar cell 2, and the photoelectric conversion efficiency of the solar cell 2 is 21%.
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