A kind of normal temperature dearsenic agent and its preparation method and application
A technology of arsenic removal and surfactant, which is applied in the direction of chemical instruments and methods, physical/chemical process catalysts, heterogeneous catalyst chemical elements, etc. It can solve the problems of unstable outlet accuracy, low arsenic capacity, and short life of normal temperature arsenic removal agents. and other problems, to achieve excellent catalytic performance, high arsenic capacity, and long service life
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0050] Embodiment 1, preparation novel normal temperature arsenic removal agent:
[0051] A preparation method of a novel normal temperature arsenic removal agent, comprising the steps of:
[0052] 1) Pretreatment of the carrier: Under the environment of nitrogen protection, 100g of titanium-aluminum carrier (wherein the mass fraction of titanium oxide is 30%) is treated under the following conditions: firstly, the heating rate is 2°C / min from 70°C to Raise the temperature to 400°C, and keep it at a constant temperature of 400°C for 40 minutes; then raise the temperature to 550°C at a heating rate of 3°C / min, and roast at 550°C for 3 hours, and cool to room temperature to obtain a pretreated carrier; after detection by an automatic adsorption instrument, It is known that the specific surface area of the pretreatment carrier is 350m 2 / g, the pore size is 5nm;
[0053] 2) Immerse the pretreated carrier in step 1) in an aqueous solution of nickel nitrate with a molar concent...
Embodiment 2
[0057] Embodiment 2, preparation novel normal temperature arsenic removal agent:
[0058] A preparation method of a novel normal temperature arsenic removal agent, comprising the steps of:
[0059] 1) Pretreatment of the carrier: under the environment of nitrogen protection, the specific surface area of 1g is 300m 2 / g, pore diameter of 5nm titanium aluminum carrier (wherein the mass fraction of titanium oxide is 40%) is processed under the following conditions: first, the temperature is raised to 400°C with a heating rate of 2°C / min, and kept at a constant temperature of 400°C 40min; then heated up to 550°C at a heating rate of 5°C / min, and roasted at 550°C for 3h, cooled to room temperature to obtain a pretreated carrier; through an automatic adsorption instrument, it was known that the specific surface area of the pretreated carrier was 300m 2 / g, the pore size is 6nm;
[0060] 2) Immerse the carrier pretreated in step 1) in an aqueous solution of nickel nitrate with ...
Embodiment 3
[0064] Embodiment 3, preparation novel normal temperature arsenic removal agent:
[0065] A preparation method of a novel normal temperature arsenic removal agent, comprising the steps of:
[0066] 1) The specific surface area of 50g is 500m 2 / g, the alumina carrier with a pore diameter of 4nm is impregnated in the aqueous solution of nickel nitrate with a molar concentration of 1mol / L. 60°C for 1 hour; after filtering, dry the retentate at 120°C for 12 hours, and finally bake it in a muffle furnace at 450°C for 3 hours to obtain a NiO-loaded carrier, so that the NiO loading amount accounts for the alumina carrier 0.5% of mass;
[0067] 2) Immerse the NiO-loaded carrier in step 1) in an aqueous solution of copper nitrate with a molar concentration of 4mol / L, and add surfactant PEG2000 accounting for 0.1% of the mass of copper nitrate to the aqueous solution of copper nitrate until completely dissolved, The impregnation conditions are as follows: use ultrasonic impregnati...
PUM
Property | Measurement | Unit |
---|---|---|
pore size | aaaaa | aaaaa |
specific surface area | aaaaa | aaaaa |
pore size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com