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A kind of preparation method of narrow stripe ridge Gaas-based laser and Gaas-based laser

A laser and ridge-shaped technology, applied in the direction of lasers, semiconductor lasers, laser components, etc., can solve problems such as material damage, achieve convenient operation, simplify process steps, improve luminous efficiency and output optical power

Active Publication Date: 2018-09-25
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If other chemicals are spin-coated on the epitaxial wafer that removes the unnecessary material layer to form the required pattern, it will cause certain damage to the material without photoresist protection.

Method used

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  • A kind of preparation method of narrow stripe ridge Gaas-based laser and Gaas-based laser
  • A kind of preparation method of narrow stripe ridge Gaas-based laser and Gaas-based laser
  • A kind of preparation method of narrow stripe ridge Gaas-based laser and Gaas-based laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A preparation method of a narrow strip ridge GaAs-based laser, comprising the following steps:

[0049] (1) Spin-on photoresist

[0050] The thickness of the spin coating on the epitaxial wafer surface is Positive photoresist forms a photoresist layer; bake to remove the solvent in the photoresist, and bake in an oven at 100°C for 20min;

[0051] (2) One-time lithography pattern

[0052] exposing the photoresist layer by using the first photolithography mask;

[0053] The first photolithography mask is provided with a plurality of first graphic scales parallel to each other and aligned at one end;

[0054] Then remove the photoresist of the exposed part by developing and photoetching the required pattern photoresist and the first pattern scale on the epitaxial wafer;

[0055] (3) Second photolithography pattern

[0056] exposing the photoresist layer by using a second photolithography mask;

[0057] The second photolithographic mask is provided with a plurality o...

Embodiment 2

[0074] A GaAs-based laser prepared by the method described in Example 1, comprising an epitaxial wafer grown with an epitaxial material layer, a narrow strip ridge structure is etched on the surface of the epitaxial wafer, and a current blocking layer covers the narrow strip ridge structure On both sides, a current injection window is provided on the top of the narrow ridge structure, and the width of the narrow ridge structure is 3 μm.

Embodiment 3

[0076] The preparation method of a kind of narrow strip ridge GaAs-based laser as described in embodiment 1, its difference is, in described step (1), in epitaxial wafer surface spin coating thickness is The positive photoresist forms a photoresist layer; bake to remove the solvent in the photoresist, and bake on a hot plate at 98°C for 2min.

[0077] Step (3) utilizing the second photolithography mask to expose the photoresist layer;

[0078] The second photolithographic mask is provided with a plurality of second graphic scales parallel to each other and aligned at one end; the second graphic scales are arranged symmetrically with the first graphic scales;

[0079] According to the needs, the line width of the narrow strip ridge is 5 μm, and the first graphic scale 5 μm prepared by the first photolithography is found on the epitaxial wafer, and the second graphic scale 5 μm is found on the second photolithography mask. , then align the second graphic scale 5 μm with the fi...

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PUM

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Abstract

The invention relates to a manufacturing method for a narrow ridge GaAs-based laser device. The method comprises steps that a first photolithographic mask is utilized at a surface of an epitaxial wafer to obtain a graph photoresist with certain thickness through photolithography, a certain graph scale is formed on a specific area on the surface of the epitaxial wafer through photolithography, then a second photolithographic mask is utilized, the graph scale on the specific area of the photolithographic mask and the surface of the epitaxial wafer are utilized to manufacture a graph through photolithography, the graph satisfies dimension requirements, through corrosion, a growth electrode, thinning, alloy and packaging, the laser device is formed. Through the method, on one hand, photolithography of graphs in small dimensions can be realized without expensive equipment, the mask photoresist can be further taken as a masking film used for carrying out corrosion of a graph of the epitaxial wafer, on the other hand, a current blocking layer can be made to cover a side face of a ridge graph without employing an overlay mode, improving light emitting efficiency and the output light power is facilitated, and performance of the laser device can be effectively improved.

Description

technical field [0001] The invention relates to a preparation method of a narrow ridge-shaped GaAs-based laser and the GaAs-based laser, belonging to the technical field of semiconductors. Background technique [0002] Since the advent of semiconductor lasers, as a new type of light source, they have been favored in the fields of optical storage, optical communications, national defense, and medical treatment due to their small size, high power, long life, and convenient use. In the manufacturing process of semiconductor lasers, the requirements for the width of laser ridges are getting smaller and smaller, and the requirements for photolithography technology are higher. The photolithography process uses photoresist through exposure, development, etc. The pattern is transferred to the epitaxial wafer, so that the epitaxial wafer has the photoresist pattern of the device to be made, and then the pattern structure is transferred to the epitaxial wafer by chemical or physical m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00H01S5/22G03F7/20H01L21/027
CPCG03F7/20H01L21/027H01S5/00H01S5/22
Inventor 王金翠苏建徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.