Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor array and image display device

A technology of thin film transistors and arrays, applied in the field of thin film transistor arrays and image display devices, capable of solving problems such as production volume or cost

Active Publication Date: 2016-05-11
TOPPAN PRINTING CO LTD
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among these methods, since photolithography is used in via hole formation, throughput or cost becomes a problem for attempts to manufacture thin-film transistor arrays by printing methods aimed at low cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor array and image display device
  • Thin film transistor array and image display device
  • Thin film transistor array and image display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] figure 2 A pattern layout plan view and a cross-sectional structure showing a schematic configuration of the thin film transistor array 51 composed of the bottom-gate bottom-contact type flexible thin film transistor array of the first embodiment are shown. Refer to the following figure 2 The manufacturing method will be described. The size of one element of the thin film transistor array 51 is 300 μm×300 μm, and there are 240×320 elements.

[0049] A polyethylene naphthalate (PEN) film was used as the plastic substrate 10 . After forming a film of 100 nm of aluminum on the PEN film by sputtering, photolithography and etching were performed using a positive resist, and then the resist was peeled off to form gate electrode 11 and capacitor electrode 19 .

[0050] Next, after coating a coating-type photosensitive insulating material (AH series, manufactured by Hitachi Chemical Co., Ltd.) as a gate insulating material by spin coating, the terminal portion of the gate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

Provided is a thin film transistor array which does not employ photolithography for the formation of an interlayer insulating film and has few defects in the interlayer insulating film. This thin film transistor array is provided at least with an insulating substrate (10), a gate electrode (11), a gate insulating film (12), a source electrode (13B), a drain electrode (14), a semiconductor layer (15), a protection layer (16) that covers the semiconductor layer (15), a pixel electrode (18), and an interlayer insulating film (17) that is formed between the drain electrode (14) and the pixel electrode (18). The interlayer insulating film (17) is an organic film or an organic-inorganic mixed film, and in order to connect the pixel electrode (18) to the drain electrode (14), the interlayer insulating film (17) has a via hole (40) in a part of the portion where the drain electrode (14) is formed. The drain electrode (14) has an opening portion that is positioned within the via hole (40) and is obtained by forming an opening in the electrode material, and a thiol group or a disulfide group is present on the drain electrode (14) within the via hole (40).

Description

technical field [0001] The invention relates to a thin film transistor array and an image display device. Background technique [0002] In recent years, from the viewpoint of flexibility, weight reduction, and cost reduction, research on thin-film transistors using organic semiconductors that can be produced by printing methods has been actively conducted, and it is expected to be used in drive circuits such as organic EL or electronic paper, or electronic labels. etc. applications. [0003] A thin film transistor is formed by stacking conductors, insulators, semiconductors, and the like. The thin film transistor array is provided with an interlayer insulating film according to its structure or application, and the upper conductor and the lower conductor are electrically connected through via holes provided in the interlayer insulating film. [0004] In order to form an interlayer insulating film, the following method is widely used: use plasma CVD to form a film of silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L21/28H01L21/288H01L29/786H01L51/05
CPCH01L27/1248H01L27/1292Y02E10/549H10K59/123H10K71/13H10K10/88H10K10/466H10K19/10H10K77/10H10K85/10H10K85/60H10K85/111H10K85/40H10K85/623G02F1/1368
Inventor 熊谷稔池田典昭
Owner TOPPAN PRINTING CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com