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Nanostructured amorphous oxide semiconductor film and production method thereof

An amorphous oxide and nanostructure technology, applied in the field of amorphous oxide semiconductor thin film and its preparation, can solve the problems of limiting the application of amorphous oxide semiconductor thin film, small specific surface area, etc., and achieve easy integration and increase in size Specific surface area, easy miniaturization effect

Active Publication Date: 2016-05-25
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a bottleneck in the development of amorphous oxide semiconductor thin films in the sensing field at present, that is, the grown amorphous oxide semiconductor thin films (such as InGaZnO, ZnAlSnO, etc.) are usually thin film materials with very flat surfaces, and the specific surface area Not large, which greatly limits the application of amorphous oxide semiconductor thin films in the field of sensing

Method used

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  • Nanostructured amorphous oxide semiconductor film and production method thereof
  • Nanostructured amorphous oxide semiconductor film and production method thereof
  • Nanostructured amorphous oxide semiconductor film and production method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] First prepare the precursor solution: the Sn precursor SnCl 2 2H 2 Precursor C of O and Ti 12 h 28 o 4 Ti and NH respectively 4 NO 3 Mixed with Sn source and Ti source, where NH 4 NO 3 The molar ratio with Sn and Ti is 1:1; then the configured Sn source, Ti source and Zn precursor Zn(NO 3 ) 2 ·6H 2 O, the three were dissolved in dimethoxyethanol solvent respectively, and after the dissolution was completed, acetylacetone and ammonia water were added respectively; the amount of acetylacetone added was 210 μl, 80 μl, and 120 μl respectively; the concentration of ammonia water was 14.5M, and the amount added was 60 μl respectively , 40 μl, and 69 μl; each of them was prepared as a precursor solution of Sn, Ti and Zn with a concentration of 0.2M. Stir at room temperature for 24 hours and then filter; finally, ultrasonically mix uniformly according to the molar ratio of Zn:Sn:Ti=0.36:0.63:0.01, and then age for 24 hours to obtain the sol required for spin coating. ...

Embodiment 2

[0037] First prepare the precursor solution: the Sn precursor SnCl 2 2H 2 Precursor C of O and Ti 12 h 28 o 4 Ti and NH respectively 4 NO 3 Mixed with Sn source and Ti source, where NH 4 NO 3 The molar ratio with Sn and Ti is 1:1; then the configured Sn source, Ti source and Zn precursor Zn(NO 3 ) 2 ·6H 2 O, the three were dissolved in dimethoxyethanol solvent respectively, and after the dissolution was complete, acetylacetone and ammonia water were added respectively, wherein the amount of acetylacetone added was 210 μl, 80 μl, and 120 μl respectively, and the concentration of ammonia water was 14.5M, and the amount added was 60 μl respectively , 40 μl, 69 μl, each made into a precursor solution with a concentration of 0.2M, stirred at 60°C for 12 hours and then filtered; finally, according to the molar ratio of Zn:Sn:Ti=0.34:0.60:0.06, ultrasonically mixed evenly, and then aged for 12 hours Prepare the sol required for spin coating.

[0038] Film formation: The so...

Embodiment 3

[0043] First prepare the precursor solution: the Sn precursor SnCl 2 2H 2 Precursor C of O and Ti 12 h 28 o 4 Ti and NH respectively 4 NO 3 Mixed with Sn source and Ti source, where NH 4 NO 3 The molar ratio of Zn and Ti is 1:1; then the configured Sn source, Ti source and Zn precursor Zn(NO 3 ) 2 ·6H 2 O The three were dissolved in dimethoxyethanol solvent respectively. After the dissolution was complete, acetylacetone and ammonia water were added respectively, wherein the amount of acetylacetone added was 210 μl, 80 μl, and 120 μl respectively, and the concentration of ammonia water was 14.5M, and the amount added was 60 μl respectively. , 40 μl, 69 μl, each made into a precursor solution with a concentration of 0.2M, stirred at 40°C for 18 hours and then filtered; finally, according to the molar ratio of Zn:Sn:Ti=0.4:0.51:0.09, ultrasonically mixed evenly, and then aged for 18 hours Prepare the sol required for spin coating.

[0044] Film formation: The sol prepa...

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Abstract

The invention discloses a nanostructured amorphous oxide semiconductor film. The film comprises a continuous film layer and a nanostructure layer, the continuous film layer directly grows on a substrate; and the nanostructure layer is vertical natural extension of the continuous film layer, and has convex peaks and concave pits distributed at intervals. The film is an amorphous oxide semiconductor ZnTiSnO film. The invention also discloses a production method of the film. The method comprises the following steps: respectively dissolving Zn(NO3)2.6H2O, SnCl2.2H2O + NH4NO3 and Cl2H28O4Ti + NH4NO3 in a dimethoxy ethanol solvent, respectively adding acetylacetone and an ammonia water solution to prepare a precursor solution, preparing sol, spin-coating the substrate with the sol, and annealing the obtained substrate. The amorphous oxide semiconductor film has a nanostructure and large specific surface area, and is hopeful to be applied in the fields of biologic sensing, gas sensing and ultraviolet detection.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film and a preparation method thereof, in particular to an amorphous oxide semiconductor thin film with a nanometer structure and a preparation method thereof. Background technique [0002] Amorphous oxide semiconductor (AOS) is a new type of functional oxide material. In 2004, the Japanese Kenji Nomura research group published a paper in Nature, discovered InGaZnO amorphous oxide semiconductor thin film, and prepared a thin film transistor as a channel layer. Since then, amorphous oxide semiconductors have attracted widespread attention, and research reports related to amorphous oxide semiconductor thin films have increased rapidly. At present, the target application fields of amorphous oxide semiconductor thin films are mainly new generation display technologies, such as large-area high-definition display, flat panel display, transparent display, etc. Therefore, the amorphous oxide semic...

Claims

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Application Information

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IPC IPC(8): C03C17/25C04B41/50
Inventor 吕建国冯丽莎江庆军叶志镇
Owner ZHEJIANG UNIV