Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same

A manufacturing method and laminated body technology, applied in semiconductor/solid-state device manufacturing, electrical components, chemical instruments and methods, etc., can solve problems such as reduced adhesion, melting of solder bumps, inability to peel off, etc., and achieve the effect of improving productivity

Inactive Publication Date: 2016-05-25
TORAY IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, temporary adhesives that are peeled off by heat treatment have the following problems: t

Method used

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  • Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same
  • Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same
  • Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same

Examples

Experimental program
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Example Embodiment

[0082] Example

[0083] The following examples are given to illustrate the present invention, but the present invention is not limited by these examples. The evaluation methods of the glass transition temperature, weight loss rate, and adhesion will be described.

[0084] (1) Measurement of glass transition temperature

[0085] Using a bar coater, apply the heat-resistant resin solution (B1 to B9, A1 to A6) described in the following production examples 1 to 15 to the glossy surface of the 18 μm thick electrolytic copper foil so that the thickness becomes 20 μm Then, it was dried at 80°C for 10 minutes, at 150°C for 10 minutes, and then heated at 250°C for 10 minutes in a nitrogen atmosphere to convert it into polyimide to obtain a resin-laminated copper foil. Next, the entire surface of the copper foil in the obtained resin-laminated copper foil was etched with a ferric chloride solution to obtain a single film of heat-resistant resin.

[0086] About 10 mg of the obtained single fi...

Example Embodiment

[0119] Production example 1 (polymerization of heat-resistant resin B solution)

[0120] Into a reactor equipped with a thermometer, a dry nitrogen inlet, a heating and cooling device using warm water and cooling water, and a stirring device, together with 2264g of NMP, 75.7g (0.7mol) of PDA and 60.1g (0.3 mol) DAE, after dissolving, add 176.5g (0.6mol) BPDA and 87.2g (0.4mol) PMDA, react at room temperature for 1 hour, and then at 60°C for 5 hours to obtain 15% by weight polyamic acid resin solution (B-1).

Example

[0121] Production examples 2-7 (polymerization of heat-resistant resin B solution)

[0122] Except changing the type and amount of acid dianhydride and diamine as shown in Table 1, the same operation as in Production Example 1 was performed to obtain a 15% by weight polyamic acid resin solution (B-2~ 7).

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Abstract

To provide an element-processing layered structure in which there is no generation of volatile compounds or occurrence of cracking in a substrate due to separation or the like during the steps for polishing the back surface and forming the back-surface circuits of a semiconductor circuit formation substrate, separation being possible in mild conditions at room temperature, and essentially no temporary adhesive remaining on the semiconductor circuit formation substrate side after separation. An element-processing layered structure in which an element-processing substrate is layered on a support substrate with temporary adhesive layers interposed therebetween, wherein the element-processing layered structure is characterized in that: the temporary adhesive layers are layered in the order of heat-resistant resin layer (A), heat-resistant resin layer (B), from the support substrate side; and the adhesive force between the heat-resistant resin layer (B) and the element-processing substrate is lower than the adhesive force between the heat-resistant resin layer (A) and the support substrate, and the adhesive force between the heat-resistant resin layer (B) and the heat-resistant resin layer (A).

Description

technical field [0001] The present invention relates to an adhesive for temporary bonding, a laminate for device processing using the same for a temporary adhesive layer, a method for manufacturing a laminate for device processing, and a thin device using the laminate for device processing In the production method, the adhesive for temporary bonding has excellent heat resistance, does not change in adhesive force even through the production process of semiconductor devices, image display devices, etc., and can be peeled off under mild conditions at room temperature. Background technique [0002] In recent years, the reduction in weight and thickness of semiconductor devices and image display devices has been progressing. In particular, in semiconductor devices, in order to achieve higher integration and higher density of semiconductor elements, a technology of connecting and stacking semiconductor chips through through silicon vias (TSV: Through Silicon Via) has been develop...

Claims

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Application Information

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IPC IPC(8): H01L21/02B32B7/04C08G73/10H01L21/304
CPCB32B7/12B32B27/08B32B2307/306B32B2457/20C08G73/1042C08G73/105C08G73/106C08G73/1082C09J179/08H01L21/6835H01L2221/68327H01L2221/6834H01L2221/68386
Inventor 渡边拓生李忠善富川真佐夫竹田清佳
Owner TORAY IND INC
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