Wave-cut remaining edge type thin-film capacitor

A technology for film capacitors and capacitors, which is applied to film/thick film capacitors, multilayer capacitors, fixed capacitor electrodes, etc., can solve the problem of low adhesion between the gold spray layer and the core, low mechanical strength of the gold spray layer, and effective contact Small area and other problems, to achieve the effect of increasing the effective contact area, high mechanical strength, and cost-effective

Inactive Publication Date: 2016-06-01
FOSHAN CITY XINYUAN ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The effective contact area between the gold-sprayed layer and the core metal film of ordinary capacitors is small, so that the adhesion between the gold-sprayed layer and the core is small, resulting in low mechanical strength and weak current resistance of the gold-sprayed layer of film capacitors. Affect the life of the capacitor

Method used

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  • Wave-cut remaining edge type thin-film capacitor
  • Wave-cut remaining edge type thin-film capacitor

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Embodiment Construction

[0012] The present invention is specifically described below in conjunction with accompanying drawing, as Figure 1-2 As shown, a wave-cut edge-cut film capacitor includes a capacitor core 1 and a capacitor body 2, and the capacitor core 1 is composed of two layers of film dielectrics 3 arranged in parallel and metal plating electrodes 4 on the film dielectric 3 1. The gold-sprayed layer sprayed on the surface of the metal-plated electrode 4 and the lead wire 5 welded on the gold-sprayed layer are composed of four parts. The right edge of the metal-plated electrode 4 and the right edge of the film medium 3 are cut in the form of waves Formed wavy structure, the right edge of the metal plating electrode 4 and the right edge of the film medium 3 are provided with a margin 6; the film medium 3 is a polypropylene film; the left edge of the metal plating electrode 4 and the The left edge of the thin film medium 3 is a straight cut structure formed by straight cutting, and the left ...

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Abstract

The invention discloses a wave-cut remaining edge type thin-film capacitor, which comprises a capacitor core 1 and a capacitor body 2. The capacitor core 1 is composed of four parts which are two layers of parallel thin-film dielectric 3, a metal coating electrode 4 located on the thin-film dielectric 3, a metal spraying layer on the surface of the metal coating electrode 4 and a lead 5 welded on the metal spraying layer. The right side of the metal coating electrode 4 and the right side of the thin-film dielectric 3 are both of a wave-shaped structure formed in a wave-cut manner. A remaining edge 6 is disposed between the right side of the metal coating electrode 4 and the right side of the thin-film dielectric 3. The invention has the beneficial effects of enhanced current resistance, low loss, safety and environmental protection, simple structure and high practicality.

Description

technical field [0001] The invention relates to the improvement of capacitors, in particular to a wave-cut and edge-cut film capacitor. Background technique [0002] The effective contact area between the gold-sprayed layer and the core metal film of ordinary capacitors is small, so that the adhesion between the gold-sprayed layer and the core is small, resulting in low mechanical strength and weak current resistance of the gold-sprayed layer of film capacitors. affect the life of the capacitor. Contents of the invention [0003] The object of the present invention is to solve the above-mentioned problems and design a wave-cut and edge-cut film capacitor. [0004] The technical solution of the present invention to achieve the above object is a wave-cut edge-cut film capacitor, comprising a capacitor core 1 and a capacitor body 2, the capacitor core 1 is composed of two layers of film media 3 arranged in parallel, located The metal-plated electrode 4 on the metal-plated e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/14H01G4/005
Inventor 谢志懋王占东
Owner FOSHAN CITY XINYUAN ELECTRONICS CO LTD
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