Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of flash memory device

A manufacturing method and technology for flash memory devices, which are applied in the field of flash memory device manufacturing, can solve the problem that the yield rate of flash memory devices needs to be improved, etc., and achieve the effect of small difference in morphology and good morphology.

Active Publication Date: 2018-07-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the yield rate of flash memory devices in the prior art needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of flash memory device
  • Manufacturing method of flash memory device
  • Manufacturing method of flash memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] It can be seen from the background art that the yield rate of flash memory devices formed in the prior art needs to be improved.

[0024] Figure 1 to Figure 5 It is a schematic cross-sectional structure diagram of a process of forming a flash memory device.

[0025] refer to figure 1 , providing a substrate 11, a coupling oxide (Coupling Oxide) layer 12 on the substrate 11, a floating gate layer 13 on the coupling oxide layer 12, and a hard mask layer 14 on the floating gate 13;

[0026] refer to figure 2 , patterning the hard mask layer 14 to form an opening 15 penetrating through the hard mask layer 14 .

[0027] refer to image 3 , using the patterned hard mask layer 14 as a mask, using a first etching process to etch and remove the floating gate layer 13 with a first thickness along the opening 15 .

[0028] The semiconductor process is usually carried out with a lot as a unit. During the process of etching and removing the floating gate layer 13 of the first...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for manufacturing a flash memory device, comprising: patterning a hard mask layer to form an opening through the thickness of the hard mask layer; using a first etching process to etch and remove a floating gate layer of a first thickness located below the opening , wherein, according to the initial thickness of the floating gate layer under the opening before performing the first etching process, the etching duration of the first etching process is determined, so that the floating gate after the first etching process is completed The thickness of the layer is a fixed value; after performing the first etching process, the second etching process is used to etch and remove the floating gate layer with a second thickness, and also etch and remove part of the floating gate layer located under the hard mask layer layer, forming a floating gate tip region under the hard mask layer, wherein the etching duration of the second etching process is a fixed duration. The invention improves the shape stability of the tip of the formed floating gate, so that the yield rate of the manufactured flash memory device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a flash memory device. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits, and digital / analog hybrid circuits. Among them, memory devices are an important type of digital circuits. Among storage devices, the development of flash memory (flash memory, referred to as flash memory) is particularly rapid this year. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast storage speed, easy erasure and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. Wide range of applications. [0003] Flash memory devices mainly include stack gate (Stack Gate) structure and split...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H01L29/788H01L29/423H10B41/30
CPCH01L29/42324H01L29/788H10B41/30
Inventor 徐涛曹子贵王卉陈宏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com