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Manufacturing method of flash memory device

A manufacturing method and technology for flash memory devices, which are applied in the field of flash memory device manufacturing, can solve the problem that the yield rate of flash memory devices needs to be improved, etc., and achieve the effect of small difference in morphology and good morphology.

Active Publication Date: 2018-07-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the yield rate of flash memory devices in the prior art needs to be improved

Method used

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  • Manufacturing method of flash memory device
  • Manufacturing method of flash memory device
  • Manufacturing method of flash memory device

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Experimental program
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Effect test

Embodiment Construction

[0023] It can be seen from the background art that the yield rate of flash memory devices formed in the prior art needs to be improved.

[0024] Figure 1 to Figure 5 It is a schematic cross-sectional structure diagram of a process of forming a flash memory device.

[0025] refer to figure 1 , providing a substrate 11, a coupling oxide (Coupling Oxide) layer 12 on the substrate 11, a floating gate layer 13 on the coupling oxide layer 12, and a hard mask layer 14 on the floating gate 13;

[0026] refer to figure 2 , patterning the hard mask layer 14 to form an opening 15 penetrating through the hard mask layer 14 .

[0027] refer to image 3 , using the patterned hard mask layer 14 as a mask, using a first etching process to etch and remove the floating gate layer 13 with a first thickness along the opening 15 .

[0028] The semiconductor process is usually carried out with a lot as a unit. During the process of etching and removing the floating gate layer 13 of the first...

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Abstract

A method for manufacturing a flash memory device, comprising: patterning a hard mask layer to form an opening through the thickness of the hard mask layer; using a first etching process to etch and remove a floating gate layer of a first thickness located below the opening , wherein, according to the initial thickness of the floating gate layer under the opening before performing the first etching process, the etching duration of the first etching process is determined, so that the floating gate after the first etching process is completed The thickness of the layer is a fixed value; after performing the first etching process, the second etching process is used to etch and remove the floating gate layer with a second thickness, and also etch and remove part of the floating gate layer located under the hard mask layer layer, forming a floating gate tip region under the hard mask layer, wherein the etching duration of the second etching process is a fixed duration. The invention improves the shape stability of the tip of the formed floating gate, so that the yield rate of the manufactured flash memory device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a flash memory device. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits, and digital / analog hybrid circuits. Among them, memory devices are an important type of digital circuits. Among storage devices, the development of flash memory (flash memory, referred to as flash memory) is particularly rapid this year. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast storage speed, easy erasure and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. Wide range of applications. [0003] Flash memory devices mainly include stack gate (Stack Gate) structure and split...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H01L29/788H01L29/423
CPCH01L29/42324H01L29/788H10B41/30
Inventor 徐涛曹子贵王卉陈宏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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