Direct-conversion radio frequency receiving front-end circuit device

Abstract

The embodiment of the invention provides a direct-conversion radio frequency receiving front-end circuit device. The device comprises a driving stage circuit, a switch pair circuit and a load circuit; the driving stage circuit converts a small signal voltage vRF into small signal current iRF, and folds the small signal current iRF to make the small signal current iRFflow into a source electrode of a PMOS tube in the switch pair circuit through an NMOS tube; the switch pair circuit carries out frequency conversion processing on the small signal current iRF through the PMOS tube to obtain medium frequency small signal current and transmits the medium frequency small signal current to the load circuit; and the load circuit converts the medium frequency small signal current into a medium frequency small signal voltage and outputs the medium frequency small signal voltage. The direct-conversion radio frequency receiving front-end circuit device provided by the embodiment of the invention reduces the noise in a similar current injection mode to improve the overall performance of the circuit. A folded structure is employed to increase an additional branch from the power supply to the ground, in other words, the optimization degree of freedom of bias current is correspondingly increased. The bias current of a switch pair is reduced to improve the flicker noise performance, and meanwhile, the direct-conversion radio frequency receiving front-end circuit device has excellent gain performance.

Description

technical field [0001] The invention relates to the technical field of radio frequency reception, in particular to a front-end circuit device for direct frequency conversion radio frequency reception. Background technique [0002] In the past ten years, the important research directions of the RF receiving front-end mainly include low-voltage and low-power implementation technology, low-noise implementation technology, high-linearity implementation technology, ultra-wideband implementation method, ultra-high-frequency application implementation, and system monolithic integration. In addition to using ever-shrinking process sizes and high characteristic frequency three-five-point semiconductor devices to obtain good circuit high-frequency performance, there are various technical methods such as current multiplexing, capacitive cross-coupling common-gate input, Derivative superposition, filter termination to obtain good electrical performance. The direct conversion receiving ...

AI Technical Summary

Problems solved by technology

[0004] The shortcoming of the radio frequency receiving front end of the above-mentioned prior art direct conversion is: in the low noise amplifier, the cascaded structure of the mixer, because the gain of the passive CMOS mixer is small, the gain of the system for the front stage low noise amplifier more demanding

On the other hand, the high noise of Gilbert type active mixer, especially the flicker noise leakage of the switch pair will seriously deteriorate the receiving performance of the direct conversion system

Noise is higher in the fusion structure of LNA and mixer

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