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A method for improving the turn-off performance of an insulated gate bipolar transistor

A bipolar transistor and insulated gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of slow hole extraction speed, small turn-off energy loss, high turn-off energy loss, etc., to improve turn-off loss , low turn-off loss, and improved conduction voltage drop

Active Publication Date: 2018-07-20
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Insulated gate bipolar transistors need lower turn-on voltage drop and smaller turn-off energy loss in power supply, induction heating, electric traction and other power switching applications. For this reason, several innovative methods have been proposed in recent years Insulated gate bipolar transistor structure, for example, literature (1) [Y.Onozawa, "Development of the next generation 1700Vtrench-gate FS-IGBT", Proceedings of the 23 rd International Symposium on PowerSemiconductor Devices and ICs, San Diego, CA, May.2011, P52-55] proposed the traditional structure in this patent, which can obtain a very low conduction voltage drop, but when it is turned off, due to the accumulated void The extraction speed of the hole is slow, and the off time is long, resulting in a high turn-off energy loss

Method used

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  • A method for improving the turn-off performance of an insulated gate bipolar transistor
  • A method for improving the turn-off performance of an insulated gate bipolar transistor
  • A method for improving the turn-off performance of an insulated gate bipolar transistor

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Embodiment 1

[0029] An insulated gate bipolar transistor comprising: a heavily doped P-type collector region 2, a collector metal 1 is provided on the back of the heavily doped P-type collector region 2, and a lightly doped N-type buffer is provided on the front side Layer 3, the lightly doped N-type buffer layer 3 is provided with a lightly doped N-type base region 4, and the lightly doped N-type base region 4 is provided with a lightly doped N-type carrier storage layer 5. The doped N-type carrier storage layer 5 is provided with trench gates parallel to each other. The trench gates are composed of a first type gate oxide layer 6 and a first polysilicon gate 7. The layer 6 is located between the first polysilicon gate 7 and the lightly doped N-type carrier storage layer 5. The trench gate has a deep depth into the lightly doped N-type base region 4, and the trench gate is lightly doped with N Type carrier storage layer 5 is divided into strips, the strip lightly doped N-type carrier stora...

Embodiment 2

[0036] A method for manufacturing an insulated gate bipolar transistor with improved turn-off performance includes:

[0037] Step 1: First select N-type silicon material as the substrate and epitaxially grow a shallow doped N-type epitaxial layer;

[0038] The second step: ion implantation of N-type impurities and annealing to form lightly doped N-type carrier storage layer 5;

[0039] The third step: etching the trench, and forming the first type gate oxide layer 6 and the second type gate oxide layer 14;

[0040] The fourth step: deposit polysilicon, and etch to form the first polysilicon gate 7;

[0041] The fifth step: selective ion implantation of P-type impurities, and annealing to form a lightly doped P-type body region 8;

[0042] The sixth step: ion implantation of P-type impurities, and annealing to form a lightly doped shallow P well 11;

[0043] The seventh step: deposit polysilicon to form a second polysilicon gate 15;

[0044] Step 8: Selectively etch the light second polysil...

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Abstract

An insulated gate bipolar transistor structure comprises collector metal, a P-type collector region and an N-type base region. The surface of the N-type base region is provided with an N-type carrier storage layer and a groove gates. The groove gates divide the N-type carrier storage layer into strips. The surface of the strip-shaped N-type carrier storage layer is uniformly provided with block-shaped P-type body regions. The block-shaped carrier storage layer is provided with a second-type gate oxide layer connected to a first-type gate oxide layer. The second-type gate oxide layer is provided with a second polysilicon gate connected to a first polysilicon gate. The surfaces of the block-shaped P-type body regions are provided with P-type source regions and N-type source regions and are connected to emitter metal. The structure is characterized in that the surface of the block-shaped carrier storage layer is provided with light-doped shallow P-wells connected to the block-shaped P-type body regions. When the device in conduction, a grid electrode applies a positive grid voltage which is completely exhausted by the light-doped shallow P-wells to realize an injection efficiency enhance effect and enable the device to have a relatively small conduction pressure drop. When the device is turned off, the light-doped shallow P-wells are not completely exhausted, and conductive channels form to accelerate the device turn-off speed.

Description

Technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, in particular to a low-loss insulated gate bipolar transistor structure and a preparation method thereof, and is particularly suitable for power supply, induction heating, electric traction and the like. Background technique [0002] Insulated gate bipolar transistors require lower turn-on voltage drop and lower turn-off energy loss in power switch applications such as power supply, induction heating, and electric traction. For this reason, several innovations have been proposed in recent years Insulated gate bipolar transistor structure, for example, literature (1) [Y. Onozawa, "Development of the next generation 1700Vtrench-gate FS-IGBT", Proceedings of the 23 rd International Symposium on PowerSemiconductor Devices and ICs, San Diego, CA, May. 2011, P52-55] proposed the traditional structure in this patent, which can obtain a very low turn-on voltage drop, but when it is t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/0603H01L29/7393
Inventor 祝靖周锦程杨卓孙伟锋宋慧滨陆生礼时龙兴
Owner SOUTHEAST UNIV
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