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Laser-enhanced hydrogen passivation method and application of highly efficient passivation of low-price silicon material defects and impurities

A silicon material and low price technology, applied in the field of laser-enhanced hydrogen passivation for efficient passivation of low-price silicon material defects and impurities, can solve problems such as poor stability, achieve high stability, improve efficiency, and moderate equipment prices

Active Publication Date: 2018-02-06
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Third, the traditional hydrogen passivation method has relatively poor stability. If the silicon wafer is subjected to heat treatment exceeding 200°C again, the hydrogen passivation effect will disappear.

Method used

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  • Laser-enhanced hydrogen passivation method and application of highly efficient passivation of low-price silicon material defects and impurities
  • Laser-enhanced hydrogen passivation method and application of highly efficient passivation of low-price silicon material defects and impurities
  • Laser-enhanced hydrogen passivation method and application of highly efficient passivation of low-price silicon material defects and impurities

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) Pretreatment of low-priced silicon materials: clean the cast-mono silicon materials with RCA solution and 5% HF solution by volume fraction to remove impurities on the surface.

[0034] (2) Use screen printing technology to make low-price silicon cells from pretreated silicon wafers.

[0035] Diffusion of phosphorus element into the pretreated silicon material in step (1), so that the resistivity on the surface of the silicon material reaches 40-100Ω / □, and an n+ emission layer is formed on the upper surface of the silicon material; using plasma enhanced chemical vapor deposition (PECVD ) grow a layer of 75nm SiNx:H passivation layer on the upper surface of the n+ emission layer of silicon material, and the SiN on the upper surface of the n+ emission layer x The :H passivation layer also acts as an anti-reflection layer; x: The upper surface of the H passivation layer and the lower surface of the silicon material are respectively laid with a silver metal grid and a...

Embodiment 2

[0038] (1) Pretreatment of low-priced silicon materials: the polysilicon materials are cleaned with RCA solution and 5% HF solution by volume fraction to remove impurities on the surface.

[0039] (2) Use screen printing technology to make low-price silicon cells from pretreated silicon wafers.

[0040] Diffusion of phosphorus element into the pretreated silicon material in step (1), so that the resistivity on the surface of the silicon material reaches 40-100Ω / □, and an n+ emission layer is formed on the upper surface of the silicon material; using plasma enhanced chemical vapor deposition (PECVD ) grow a layer of 85nm SiNx on the upper surface of the silicon material n+ emission layer: H passivation layer, the SiN on the n+ emission layer upper surface x The :H passivation layer also acts as an anti-reflection layer; x : The upper surface of the H passivation layer and the lower surface of the silicon material are respectively laid with a silver metal mesh and an aluminum m...

Embodiment 3

[0043] (1) Pretreatment of low-priced silicon materials: UMG silicon materials are cleaned with RCA reagent and 5% HF solution by volume fraction to remove impurities and oxide layers on the surface of low-priced silicon materials;

[0044] (2) Using PERC battery manufacturing technology (see step (2) of the content of the invention for details) to make silicon wafers pretreated in step (1) into low-price silicon batteries:

[0045] Diffusion of phosphorus element into the pretreated silicon material in step (1), so that the resistivity of the silicon material surface reaches 60-100Ω / □, and an n+ emission layer is formed on the upper surface of the silicon material; using plasma enhanced chemical vapor deposition (PECVD ) growing a 75-80nm SiNx:H passivation layer on the upper surface of the n+ emitting layer and the lower surface of the silicon material respectively. SiN on the upper surface of the n+ emitter layer x The :H passivation layer also acts as an anti-reflection l...

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Abstract

The invention discloses a laser enhancement hydrogen passivation method for defects and impurities of high-efficiency passivation low-price silicon materials and application of the method. According to the method, impurities and an oxidation layer on the surface of low-price silicon materials are removed to manufacture a silicon cell of silicon materials, of which the upper surface is with an SiNx:H passivation layer; and selective scanning is carried out on a highly-composite region of the silicon cell through utilization of laser so as to improve electrical properties of the highly-composite region. The above method can directly process a silicon solar cell. The low-price silicon cell after passivation in the invention has very high stability, and general heat treatment at a temperature of below 250 DEG will not influence laser enhancement hydrogen passivation effects. The invention can be directly applied to the last step in manufacturing solar cells so as to avoid problems that hydrogen passivation is not compatible with other solar cell manufacturing steps.

Description

technical field [0001] The invention belongs to the technical field of battery materials, and in particular relates to a laser-enhanced hydrogen passivation method and application for efficiently passivating defects and impurities of low-priced silicon materials. Background technique [0002] Low-cost and high-efficiency solar cells are the development direction of solar power generation in the future, but solar cells made of low-cost materials such as low-cost silicon material cast-mono or UMG often have many defects and impurities, which greatly reduce the efficiency of the cell. Hydrogen passivation has been proven by thousands of research papers to effectively passivate defects and impurities, thereby improving the electrical properties of low-cost silicon materials. However, traditional hydrogen passivation methods (such as heating in hydrogen molecular atmosphere, heating hydrogenated silicon nitride passivation layer, heating in hydrogen plasma, etc.) still face many ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/028
CPCH01L31/028H01L31/1868Y02E10/547Y02P70/50
Inventor 宋立辉
Owner HANGZHOU DIANZI UNIV
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