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Light emitting diode epitaxial structure, growth method thereof and light emitting diode

A technology of light-emitting diodes and growth methods, applied in the field of light-emitting diode epitaxial structures and their growth methods, and light-emitting diodes, can solve the problems of difficulty in improving internal quantum efficiency, easy transition of electrons to the vicinity of dislocation lines, and high dislocation density, and achieve improved Luminous brightness, improving internal quantum efficiency, and avoiding the effect of non-radiative recombination

Active Publication Date: 2016-06-29
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The non-radiative recombination center is the main reason affecting the internal quantum efficiency. The reduction of the non-radiative recombination center helps to improve the internal quantum efficiency, and the dislocation density has a great influence on the non-radiative recombination center, and the reduction of the dislocation density is beneficial to the non-radiative recombination. However, since most epitaxial structures are heterogeneously grown on the substrate layer, electrons can easily jump to the vicinity of the dislocation line, making the dislocation density too high, which makes it difficult to improve the internal quantum efficiency

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  • Light emitting diode epitaxial structure, growth method thereof and light emitting diode

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Embodiment 1

[0035] 1. Buffer growth layer growth:

[0036] On the Veeco MOCVDK465I machine, patterned sapphire is used as the substrate layer, the temperature of the reaction chamber (substrate layer temperature) is controlled at 530°C, the pressure in the reaction chamber is 500 Torr, and 120L of hydrogen and 50L of ammonia are introduced into the reaction chamber. In addition, trimethylgallium was introduced at a flow rate of 60ml / min, and the rotational speed of the reaction chamber was controlled to be 600r / min. After 3min, an amorphous gallium nitride buffer growth layer with a thickness of 20nm was formed.

[0037] 2. Growth of undoped layer

[0038] Raise the temperature of the reaction chamber to 1000°C, maintain the pressure of the reaction chamber at 500 Torr, feed 120L of hydrogen and 50L of ammonia into the reaction chamber, and feed trimethylgallium at a flow rate of 200ml / min, and control the speed of the reaction chamber to 600r / min, grow for 30min, then increase the grow...

Embodiment 2

[0049] 1. Buffer growth layer growth:

[0050] On the Veeco MOCVDK465I machine, patterned sapphire is used as the substrate layer, the temperature of the reaction chamber (substrate layer temperature) is controlled at 500°C, the pressure in the reaction chamber is 550 Torr, and 100L of hydrogen and 50L of ammonia are introduced into the reaction chamber. In addition, trimethylgallium was introduced at a flow rate of 80ml / min, and the rotational speed of the reaction chamber was controlled at 600r / min. After 3min, an amorphous gallium nitride buffer growth layer with a thickness of 30nm was formed.

[0051] 2. Growth of undoped layer

[0052] Raise the temperature of the reaction chamber to 1000°C, maintain the pressure of the reaction chamber at 500 Torr, feed 80L of hydrogen and 50L of ammonia into the reaction chamber, and feed trimethylgallium at a flow rate of 150ml / min, and control the speed of the reaction chamber to 600r / min, grow for 30min, then increase the growth t...

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Abstract

The invention provides a light emitting diode epitaxial structure, a growth method thereof and a light emitting diode. The growth method comprises the following steps of 1) introducing a hydrogen gas, an ammonia gas and a first metal source into a reaction chamber, and growing a buffer growth layer; 2) introducing the hydrogen gas, the ammonia gas and a second metal source into the reaction chamber, wherein the buffer growth layer is grown to a non-doped layer; 3) introducing the ammonia gas, a third metal source and silicon atoms into the reaction chamber, and growing an N-type heavily-doping layer, wherein the concentration of the silicon atoms is 1*10<19>-1*10<20> pieces per cubic centimeters; 4) introducing a nitrogen gas, the ammonia gas, a fourth metal source, the silicon atoms and trimethyl indium into the reaction chamber, and growing a multi-quantum well layer, wherein the concentration of the silicon atoms is 1*10<18> pieces per cubic centimeters; and 5) introducing the hydrogen gas, the nitrogen gas, the ammonia gas, a fifth metal source and magnesium atoms into the reaction chamber, and generating the light emitting diode epitaxial structure. With the growth method provided by the invention, the non-radiation recombination probability is reduced by generating V-shaped defect, and the luminous efficiency of the light emitting diode epitaxial structure is improved.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a light-emitting diode epitaxial structure, a growth method thereof and a light-emitting diode. Background technique [0002] Light-emitting diodes (Lighting Emitting Diode, LED for short) are widely used in electronic devices in many fields due to their small size, long life, fast response speed, and high reliability. [0003] The luminous efficiency of a light-emitting diode is mainly determined by the external quantum efficiency of the epitaxial structure of the light-emitting diode, and the external quantum efficiency is the product of the internal quantum efficiency and the light extraction rate. In terms of light extraction efficiency, the epitaxial structure is mostly formed by gallium nitride, and the refractive index of gallium nitride is 2.4, and the light exit angle is 24.6°, so the light extraction efficiency ratio is only 4.5%. [0004] The non-radiative recombination cen...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02H01L21/02
CPCH01L21/0254H01L21/0262H01L33/007H01L33/025
Inventor 黄小辉米亭亭周德保康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH