Quantum dot sealing method, quantum dot compound particle and applications
A technology of quantum dots and composites, applied in chemical instruments and methods, optics, instruments, etc., can solve the problems of short service life and low efficiency of quantum dots, and achieve expanded range, good air and moisture penetration barrier effect, and prevent The effect of stress damage
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Embodiment 1
[0073] (1) Preparation of CdTe / CdS quantum dots / epoxy resin microspheres:
[0074] CdTe / CdS quantum dots / bisphenol A epoxy resin (E51) microspheres with an average particle size of 100 nm and an emission wavelength of 550 nm were prepared by inverse emulsion polymerization.
[0075] (2) Preparation of barrier layer:
[0076] Use ALD to lay out the non-conductive layer nitride layer, using SiH 2 Cl 2 and remote plasma enhanced NH 3 A silicon nitride layer is arranged. This can be done at low temperatures and does not require the use of reactive oxygen species.
Embodiment 2
[0078] (1) Preparation of CdSe / CdS quantum dots / epoxy resin particles:
[0079] Disperse red and green quantum dots CdSe / CdS with luminous wavelengths of 650nm and 550nm respectively in hydrogenated bisphenol A type epoxy resin diluted with butyl glycidyl ether (red and green quantum dots account for hydrogenated bisphenol A The mass proportions of type epoxy resin are 1% and 5%), and further dispersed and mixed uniformly by mechanical shearing; solidified to obtain quantum dots / epoxy resin block materials; and then mechanically ground to obtain a 3-5um surface containing double CdSe / CdS quantum dots / epoxy resin particles with bonding groups.
[0080] (2) Preparation of barrier layer:
[0081] The multilayer film was deposited by PECVD at 55°C, and its precursor was organosiloxane, and SiOxCy flexible organosilicon cross-connected body (3 , O 2 Prepared under atmosphere, the composition is SiOxNy (100-500GPa).
[0082] In summary, the present invention seals the quantum dot...
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