Unlock instant, AI-driven research and patent intelligence for your innovation.

A laser-assisted III-V group crystal growth device and method

A III-V, crystal growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of slow crystal growth rate, and achieve the effect of improving crystal quality, improving raw material utilization, and accelerating crystal growth

Active Publication Date: 2018-05-22
SINO NITRIDE SEMICON +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in current liquid-phase methods such as the flux method, because it is difficult to dissolve a large amount of reaction gas in the reactant solution, the growth rate of the crystal is relatively slow, and the crystal quality needs to be further improved. How to increase the reaction gas such as nitrogen, in the reactant solution Solubility has become a key technical issue for growing gallium nitride crystals by sodium flux method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A laser-assisted III-V group crystal growth device and method
  • A laser-assisted III-V group crystal growth device and method
  • A laser-assisted III-V group crystal growth device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1, as attached figure 1 As shown, the reactor 10 is provided with a reactant solution 13, the reactor 10 is provided with a seed template 14, the angle between the seed template and the horizontal direction is 0 degrees, the reactor solution 13 is immersed in the seed template 14, and the reactor 10 is provided with a nitrogen gas inlet 12, and a laser incident window 11 is provided on the wall of the reactor. The laser device includes a laser emitting device 15 and a laser receiving device 16; the laser emitting device 15 emits laser light of a specific frequency, and after passing through the laser incident window 11, the reactant solution 13, and the laser exit window 17, it reaches the laser receiving device 16, and is received and output. Feedback signals to adjust the energy and path of the laser. The seed crystal template 14 is located at the bottom of the reactor 10 and is immersed in the reactor solution 13, and the surface of the seed crystal is paral...

Embodiment 2

[0024] Example 2, as attached figure 2 As shown, the reactor 20 is provided with a reactant solution 23, the reactor 20 is provided with a crystal seed template 24, the angle between the seed template and the horizontal direction is 30 degrees, the reactor solution 23 is immersed in the crystal seed template 24, and the reactor 20 is provided with a nitrogen gas inlet 22, and a laser incident window 21 and a laser exit window 27 are provided on the wall of the reactor. The laser device includes a laser emitting device 25 and a laser receiving device 26. The laser emitting device 25 emits a laser of a specific frequency, enters the reactant solution 23 through the laser incident window 21, passes through the reactant solution 23 and passes through the laser exit window 27, and is received by the laser. The device 26 receives and outputs a feedback signal, thereby adjusting the energy and path of the laser light, and the like. The laser is incident on the reactant solution 23 ...

Embodiment 3

[0025] Example three, as attached image 3 As shown, the reactor 30 is provided with a reactant solution 33, the reactor 30 is provided with a crystal seed template 34, the reactor solution 33 is immersed in the seed crystal template 34, the reactor 30 is provided with a nitrogen gas inlet 32, and the reactor wall is provided with a nitrogen gas inlet 32. A laser entrance window 31 and a laser exit window 37 are provided. The laser device includes a laser emitting device 35 and a laser receiving device 36. The laser emitting device 35 emits laser light of a specific frequency, enters the reactant solution 33 through the laser incident window 31, and receives and feedback signals through the laser receiving device 36, thereby adjusting the laser energy and path, etc. In this embodiment, dual lasers are used for assistance, the laser paths converge in the reactant solution 33 , the lasers are incident obliquely into the reactant solution, and the surface of the seed crystal tem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a laser-assisted III-V group crystal growth device which comprises a reaction kettle, a reactant solution contained in the reaction kettle, a seed crystal template impregnated in the reactant solution, a laser emission device, a laser receiving device, a laser incident window and a laser emergent window. The invention also discloses a laser-assisted III-V group crystal growth method which comprises the following steps: placing the seed crystal template at a specific position, i.e. a laser path, in the reactant solution, and assisting a crystal liquid phase in the reactant solution in epitaxial growth by adopting laser of which the frequency is the same as the atomic resonance frequency or molecular resonance frequency of crystals in the crystal growth device or a growth raw material. According to the device and the method, the reaction rate can be effectively increased, the quality of the crystals can be effectively improved, and the controllability is high.

Description

technical field [0001] The present invention relates to the technical field of semiconductor optoelectronics, in particular to a laser-assisted III-V group crystal growth device and method. Background technique [0002] III-V crystals such as gallium nitride have the characteristics of high frequency, low noise, high efficiency and low power consumption. They can be used in commercial and national defense applications such as optical fiber communication, wireless communication, satellite communication, etc., and have larger applications. value. [0003] At present, the preparation of gallium nitride and other crystals is usually carried out by gas-phase synthesis. Although the rate has advantages compared with other methods, the crystal quality needs to be further improved. In contrast, the quality of the crystals synthesized by the liquid phase method is relatively high, and it also has a considerable growth rate, and has gradually become a research hotspot, such as the so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B30/00C30B9/00
CPCC30B9/00C30B29/40C30B30/00
Inventor 巫永鹏罗睿宏陈蛟张国义
Owner SINO NITRIDE SEMICON