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Method for preparing quasi-one-dimensional rare earth hexaboride nanowire

A hexaboride and nanowire technology, applied in the field of preparation of rare earth hexaboride nanowires, can solve the problems of complex preparation process, high preparation temperature, poor controllability of morphology, etc., and achieves important scientific value, simple process, easy The effect of transport

Inactive Publication Date: 2016-07-27
GUIZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for method (1), there is a BCl 3 Strong corrosion, low output, poor shape controllability and other disadvantages; (2) method, due to the solid boron source B 10 h 14 It needs to be transported at high temperature, and the use of noble metals such as Pt and Au as catalysts will increase production costs; method (3), B 2 h 6 It is highly toxic and should not be used as a boron source precursor
[0004] CN105271281A discloses a preparation method of rare earth and alkaline earth hexaboride nanowires, nanorods and nanotubes, which uses a single temperature zone for synchronous temperature rise synthesis, and the prepared nanowires, nanotubes and nanorods have a large lateral distribution scale, Morphology is difficult to control, and the yield is low, there are a lot of nanoparticles
[0005] In the technical scheme disclosed in 201510878324.X, the floating catalyst method used to prepare the lanthanum hexaboride nanostructure array material must adopt two-step heating and heat preservation control, the preparation process is relatively complicated, and the preparation temperature is relatively high

Method used

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  • Method for preparing quasi-one-dimensional rare earth hexaboride nanowire
  • Method for preparing quasi-one-dimensional rare earth hexaboride nanowire
  • Method for preparing quasi-one-dimensional rare earth hexaboride nanowire

Examples

Experimental program
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Effect test

Embodiment 1

[0035] First place the silicon substrate in acetone, ultrasonically clean it for 5 minutes, then place it in absolute ethanol, ultrasonically clean it for 5 minutes, and finally place it in deionized water, ultrasonically clean it for 5 minutes, dry it naturally in the air, and set it aside.

[0036] (1) Add 1.35gKBH 4 Put it into the two straight-through corundum boats, put the corundum boat in the temperature zone 1 of the airflow direction on the corundum tube of the tubular electric furnace, and put 0.2g of anhydrous LaCl 3 Put it into another two-sided corundum boat, put the corundum boat in the temperature zone 2 of the airflow direction under the corundum tube of the tubular electric furnace, and place the silicon substrate in the temperature zone 2 without water LaCl 3 Then vacuum the corundum tube, then fill it with high-purity argon, repeat the gas washing for 3 times, and then continue to vacuum;

[0037] (2) At a flow rate of 60mL / min, pass high-purity argon gas i...

Embodiment 2

[0042] First place the silicon substrate in acetone, ultrasonically clean it for 8 minutes, then place it in absolute ethanol, ultrasonically clean it for 8 minutes, and finally place it in deionized water, ultrasonically clean it for 8 minutes, dry it naturally in the air, and set it aside.

[0043] (1) Add 1.06g NaBH 4 Put it into the two straight-through corundum boats, put the corundum boat in the temperature zone 1 of the airflow direction on the corundum tube of the tubular electric furnace, and put 0.1gCeCl 3 ·7H 2 O is placed in another corundum boat that is straight through at both ends, and the corundum boat is placed in the temperature zone 2 of the airflow direction under the corundum tube of the tubular electric furnace, and the silicon substrate is placed in the temperature zone 2. 3 ·7H 2 In the downflow direction of O, then vacuumize the corundum tube, then fill it with high-purity argon gas, repeat the gas washing for 5 times, and then continue to vacuumize;...

Embodiment 3

[0047] First place the silicon substrate in acetone, ultrasonically clean it for 10 minutes, then place it in absolute ethanol, ultrasonically clean it for 10 minutes, and finally place it in deionized water, ultrasonically clean it for 10 minutes, and let it dry naturally in the air for later use.

[0048] (1) Add 0.47gKBH 4 and 0.85g NaBH 4 Put the mixture of two straight-through corundum boats, put the corundum boat in the temperature zone 1 of the airflow direction on the corundum tube of the tubular electric furnace, and put 0.12g of anhydrous SmCl 3 Put it into another corundum boat with two straight ends, put the corundum boat in the temperature zone 2 of the airflow direction under the corundum tube of the tubular electric furnace, and place the silicon substrate in the temperature zone 2 of SmCl 3 Then vacuum the corundum tube, then fill it with high-purity argon, repeat the gas washing for 3 times, and then continue to vacuum;

[0049] (2) Inject high-purity argon ...

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Abstract

The invention discloses a method for preparing a quasi-one-dimensional rare earth hexaboride nanowire. The method comprises the following steps: (1) placing a boron source in a temperature zone 1 in an upper air flow direction of a tubular electric furnace, placing a rare earth source in a temperature zone 2 in a lower air flow direction, placing a silicon substrate in a lower air flow direction of the rare earth source in the temperature zone 2, and scrubbing repeatedly; (2) introducing a protective atmosphere, directly raising the temperatures of the temperature zone 1 and the temperature zone 2 to 850-1100 DEG C at velocities of 20-30 DEG C / minute and 10-20 DEG C / minute, after the temperature is stabilized, keeping the temperature for 20-180 minutes, and naturally cooling, thereby obtaining the quasi-one-dimensional rare earth hexaboride nanowire. The quasi-one-dimensional rare earth hexaboride nanowire prepared by using the method disclosed by the invention is high in yield, the diameter of a nano structure is about 30-150nm, and the length is about 1-5mu m; by adopting the method disclosed by the invention, large-scale direct controllable growth of the quasi-one-dimensional rare earth hexaboride nanowire which is uniform in morphology is achieved, and the method is simple in process, low in cost and convenient in industrial production.

Description

technical field [0001] The invention relates to a method for preparing rare earth hexaboride nanowires, in particular to a method for preparing quasi-one-dimensional rare earth hexaboride nanowires by catalytic chemical vapor deposition. Background technique [0002] Rare earth hexaboride has a special structure, which makes it have unique properties in magnetism, optics, electricity, etc., especially a series of excellent characteristics that other materials cannot match, such as small work function, high melting point, high hardness, electrical conductivity High, good chemical stability and thermal stability. It is because of the good physical and chemical properties of this material that the field emission cathode material and its array material prepared with it have stable performance, long service life, and very broad application prospects. This series of materials can be widely used in various civil and national defense industries such as field emission flat panel dis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B35/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B35/04C01P2002/72C01P2002/82C01P2004/03C01P2004/16C01P2004/61
Inventor 肖立华唐东升周勇胡明哲冉景榆仇伟刘仪柯
Owner GUIZHOU INST OF TECH
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