Preparation method for cerium oxide crystal and application thereof in chemical mechanical polishing (CMP)

A technology of cerium oxide and crystal, which is applied in the field of preparation of cerium oxide crystal to achieve the effect of high TEOS polishing rate

Inactive Publication Date: 2016-07-27
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few reports on the controlled synthesis of cerium oxide abrasive properties based on the application requirements of STI polishing.

Method used

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  • Preparation method for cerium oxide crystal and application thereof in chemical mechanical polishing (CMP)

Examples

Experimental program
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Effect test

Embodiment 1

[0021] At room temperature, first dissolve 0.05mol of PVP (the average molecular weight is 10000) in 1L of deionized water, weigh 0.05mol of cerium nitrate and dissolve it in the above-mentioned PVP aqueous solution, and add a concentration of 0.05M ammonia water to the above-mentioned mixed solution under stirring conditions, Obtain the precipitated turbid solution, the temperature of the precipitation reaction process is 20°C; the precipitation end point is controlled by detecting the pH value of the turbid solution, and when the pH of the precipitate reaches 8.5, stop adding ammonia water and continue stirring for 30 minutes; heat the above precipitation mixture to 100°C, Add carbon dioxide gas by bubbling into the precipitation mixed solution, and stir the mixed solution at the same time. When the pH of the mixed solution reaches 6.5, stop bubbling, continue to heat and stir for 10 hours for hydrothermal crystallization reaction, and wash the obtained precipitate 3 times wit...

Embodiment 2

[0023] At room temperature, first dissolve 0.1 mol of PVA (average molecular weight of 1000) in 1 L of deionized water, weigh 1.0 mol of cerium acetate and dissolve them in the above PVA aqueous solution, and add ammonia water with a concentration of 1.0 M to the above mixed solution under stirring conditions. , to obtain a precipitated turbid solution, the temperature of the precipitation reaction process is 60°C; the precipitation end point is controlled by detecting the pH value of the turbid solution, and when the pH of the precipitate reaches 12.0, stop adding ammonia water and continue stirring for 30 minutes; heat the above precipitation mixture to 80°C , and add carbon dioxide gas by bubbling into the precipitation mixed solution, and stir the mixed solution at the same time. When the pH of the mixed solution reaches 8.5, stop bubbling, continue to insulate and stir for 10 hours for hydrothermal crystallization reaction, and the resulting precipitate is washed with pure ...

Embodiment 3

[0025] At room temperature, first dissolve 0.25mol PEG (average molecular weight 3000) in 1L deionized water, weigh 0.5mol cerium acetate and dissolve it in the above PEG aqueous solution, and add 0.5M sodium hydroxide to the above mixed solution under stirring , to obtain a precipitated turbid solution, the temperature of the precipitation reaction process is 30 °C; the precipitation end point is controlled by detecting the pH value of the turbid solution, and when the pH of the precipitation reaches 9.5, stop adding the sodium hydroxide solution and continue stirring for 30 minutes; heat the above precipitation mixture to 100°C, and add carbon dioxide gas into the precipitation mixed solution by bubbling, and stir the mixed solution at the same time. When the pH of the mixed solution reaches 7.0, stop bubbling, continue to keep warm and stir for 6.5 hours for hydrothermal crystallization reaction, and the obtained precipitate is purified After washing with water for 3 times, ...

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PUM

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Abstract

The invention aims to provide a preparation method for a cerium oxide crystal. The method comprises the following steps: preparing cerium carbonate through a two-step precipitation process, and subjecting obtained cerium carbonate to high-temperature calcination so as to obtain cerium oxide. The prepared cerium oxide particles have uniform particle size, and are easily dispersed in a liquid phase through mechanical force; and a chemical mechanical polishing (CMP) liquid with the dispersed cerium oxide as a grinding material shows excellent planarization polishing efficiency when applied in polishing through shallow trench isolation (STI).

Description

technical field [0001] The invention discloses a method for preparing cerium oxide crystals, in particular to a method for preparing cerium oxide abrasive particles used in STI polishing slurry. Background technique [0002] Cerium oxide is a kind of chemical mechanical polishing abrasive that has attracted wide attention in recent years, mainly because of its high polishing activity to silicon dioxide, and it can achieve high polishing effect at a low solid content. Therefore, chemical mechanical polishing fluids using cerium oxide as abrasives have greater application prospects and market advantages compared with traditional silicon oxide or aluminum oxide materials in terms of performance and cost. [0003] At present, there have been a lot of reports on the application of cerium oxide as an abrasive in the polishing of shallow trench isolation (STI) process. For example, patent 201310495424.5 reports a chemical mechanical polishing (CMP) composition for shallow trench is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C09G1/02C09K3/14C01F17/235C01F17/247
CPCC09G1/02C09K3/14C01F17/247C01F17/235
Inventor 尹先升贾长征房庆华周仁杰王雨春
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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