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GaN biosensor with integrated-type solid film reference electrode and producing method

A biosensor, reference electrode technology, applied in semiconductor/solid-state device parts, TV system parts, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve difficult portable and miniaturized applications, installation Complicated use, etc., to achieve the effect of easy miniaturization, low production cost, and high precision

Active Publication Date: 2016-07-27
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The purpose of the present invention is to overcome the above-mentioned deficiencies, to provide a GaN biosensor with an integrated solid-state thin-film reference electrode and a manufacturing method, which overcomes the complicated installation and use of the external reference electrode currently used in GaN biosensors, and it is difficult to realize portability and miniaturization application disadvantages

Method used

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  • GaN biosensor with integrated-type solid film reference electrode and producing method
  • GaN biosensor with integrated-type solid film reference electrode and producing method
  • GaN biosensor with integrated-type solid film reference electrode and producing method

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Experimental program
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Effect test

Embodiment 1

[0061] Step 1: On a clean substrate containing a GaN buffer layer, an AlGaN barrier layer and a substrate, the mesa isolation area is developed by photolithography, and the device isolation is formed by etching or ion implantation;

[0062] Step two, lithographically develop the ohmic contact area on the unisolated area, and use the electron beam evaporation method to obtain the ohmic metal layer. The ohmic metal layer adopts a Ti / Al / Ni / Au four-layer structure and is formed by rapid annealing at 830 degrees Alloy to obtain ohmic contact;

[0063] Step 3: Photolithographically develop the device source and drain electrode interconnection area and the reference electrode lead area on the ohmic metal layer and on the substrate, use electron beam evaporation technology to evaporate Ni / Au interconnection metal, and lift-off process , Obtain the interconnection metal of the source and drain electrodes of the GaN device and the external lead of the reference electrode;

[0064] Step 4: lit...

Embodiment 2

[0072] Step 1: On a clean substrate containing a GaN buffer layer, an InAlN barrier layer and a substrate, the mesa isolation area is developed by photolithography, and the device isolation is formed by etching or ion implantation;

[0073] Step two, lithographically develop the ohmic contact area on the unisolated area, and use the electron beam evaporation method to obtain the ohmic metal layer. The ohmic metal layer adopts a Ti / Al / Ni / Au four-layer structure and is formed by rapid annealing at 830 degrees Alloy to obtain ohmic contact;

[0074] Step 3: Photolithographically develop the device source and drain electrode interconnection area and the reference electrode lead area on the ohmic metal layer and on the substrate, use electron beam evaporation technology to evaporate Ni / Au interconnection metal, and lift-off process , Obtain the interconnection metal of the source and drain electrodes of the GaN device and the external lead of the reference electrode;

[0075] Step 4: lit...

Embodiment 3

[0083] Step 1: On a clean substrate containing a GaN buffer layer, an AlN barrier layer and a substrate, the mesa isolation area is developed by photolithography, and the isolation of the device is formed by etching or ion implantation;

[0084] Step two, lithographically develop the ohmic contact area on the unisolated area, and use the electron beam evaporation method to obtain the ohmic metal layer. The ohmic metal layer adopts a Ti / Al / Ni / Au four-layer structure and is formed by rapid annealing at 830 degrees Alloy to obtain ohmic contact;

[0085] Step 3: Photolithographically develop the device source and drain electrode interconnection area and the reference electrode lead area on the ohmic metal layer and on the substrate, use electron beam evaporation technology to evaporate Ni / Au interconnection metal, and lift-off process , Obtain the interconnection metal of the source and drain electrodes of the GaN device and the external lead of the reference electrode;

[0086] Step f...

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Abstract

The invention discloses a GaN biosensor with an integrated-type solid film reference electrode and a producing method.Compared with an existing externally-arranged reference electrode for the GaN biosensor, the integrated-type solid film reference electrode based on the GaN biosensor has the advantages that the electrode is fixed in position, the microelectronics technology is adopted for production, and the accuracy of the reference electrode is higher; as the reference electrode and GaN devices are produced at the same time, preparing cost is low, the integration level is high, and the miniaturized and portable GaN biosensor is easy to achieve.

Description

Technical field [0001] The invention belongs to the field of semiconductor biosensors, and specifically relates to a GaN biosensor with an integrated solid-state thin-film reference electrode and a manufacturing method. Background technique [0002] As the third-generation semiconductor material as a substitute for silicon, GaN has the characteristics of chemical resistance, high temperature and high power, high electron mobility, etc., and is compatible with GaN-based light-emitting diodes, deep ultraviolet detectors, wireless sensor chips, etc., which is very suitable Highly reliable sensor applications. [0003] The conventional structure of GaNHEMT devices, on the heterojunction made of AlGaN / GaN epitaxial materials, due to piezoelectric polarization and spontaneous polarization effects, will be formed at the junction of the barrier layer buffer layer, closer to the buffer layer. A layer of negatively charged two-dimensional electron gas has certain limitations due to the ener...

Claims

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Application Information

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IPC IPC(8): G01N27/327G01N27/26B81C1/00B81B7/02
CPCB81B7/02B81C1/00095B81C1/00349G01N27/26G01N27/3275
Inventor 张鹏张晨阳谢涌马晓华施建章郝跃
Owner XIDIAN UNIV
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