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Thulium and holmium codoping gallium acid barium and lanthanum laser crystal, manufacturing method and application of crystal

A barium lanthanum gallate and laser crystal technology, which is applied in lasers, crystal growth, laser components, etc., can solve the problem of lack of ultra-fast laser gain amplification medium, and achieve the effect of improving laser output efficiency and high-efficiency output

Inactive Publication Date: 2016-08-03
NEW MATERIAL INST OF SHANDONG ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the research on ultra-short and ultra-intense lasers in the 2 μm band, which is widely used, is in its infancy, and there is a lack of gain-amplifying media for ultra-fast lasers in the corresponding bands.

Method used

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  • Thulium and holmium codoping gallium acid barium and lanthanum laser crystal, manufacturing method and application of crystal
  • Thulium and holmium codoping gallium acid barium and lanthanum laser crystal, manufacturing method and application of crystal
  • Thulium and holmium codoping gallium acid barium and lanthanum laser crystal, manufacturing method and application of crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Example 1: BaLa 0.97 T m 0.025 Ho 0.005 Ga 3 o 7 Preparation of crystals (x=0.025, y=0.005)

[0028] Using BaCO 3 , La 2 o 3 , Ga 2 o 3 , Tm 2 o 3 and Ho 2 o 3 High-purity raw materials (purity is 99.999%), according to the chemical equation:

[0029] BaCO 3 +0.485La 2 o 3 +1.5Ga 2 o 3 +0.0125Tm 2 o 3 +0.0025Ho 2 o 3 =BaLa 0.97 T m 0.025 Ho 0.005 Ga 3 o 7 +CO 2 ↑

[0030] Formulated growth Tm according to stoichiometric ratio, Ho:BaLaGa 3 o 7 Crystal raw materials (where Ga 2 o 3 Excess 1wt.%). 1wt.% refers to one percent of the total mass of each raw material. The prepared raw materials are placed in a platinum crucible and sintered at 950°C for 10 hours, then the sintered raw materials are ground, compacted, and then placed in a platinum crucible, sintered in a muffle furnace at 1000°C for 10 hours, and Tm is synthesized by solid state reaction. , Ho:BaLaGa 3 o 7 polycrystalline material. Put Tm, Ho: BaLaGa 3 o7 The polycrystalli...

Embodiment 2

[0032] Example 2: BaLa 0.945 T m 0.05 Ho 0.005 Ga 3 o 7 Preparation of crystals (x=0.05, y=0.005)

[0033] Using BaCO 3 , La 2 o 3 , Ga 2 o 3 , Tm 2 o 3 and Ho 2 o 3 High-purity raw materials (purity is 99.999%), according to the chemical equation:

[0034] BaCO 3 +0.4725La 2 o 3 +1.5Ga 2 o 3 +0.025Tm 2 o 3 +0.0025Ho 2 o 3 =BaLa 0.945 T m 0.05 Ho 0.005 Ga 3 o 7 +CO 2 ↑

[0035] Formulated growth Tm according to stoichiometric ratio, Ho:BaLaGa 3 o 7 Crystal raw materials (where Ga 2 o 3 Excess 1wt.%). The prepared raw materials are placed in a platinum crucible and sintered at 950°C for 10 hours, then the sintered raw materials are ground, compacted, and then placed in a platinum crucible, sintered in a muffle furnace at 1010°C for 10 hours, and Tm is synthesized by solid state reaction. , Ho:BaLaGa 3 o 7 polycrystalline material. Put Tm, Ho: BaLaGa 3 o 7 The polycrystalline material is placed in the iridium crucible, the single crystal fu...

Embodiment 3

[0037] Example 3: BaLa 0.94 T m 0.05 Ho 0.01 Ga 3 o 7 Preparation of crystals (x=0.05, y=0.01)

[0038] Using BaCO 3 , La 2 o 3 , Ga 2 o 3 , Tm 2 o 3 and Ho 2 o 3 High-purity raw materials (purity is 99.999%), according to the chemical equation:

[0039] BaCO 3 +0.47La 2 o 3 +1.5Ga 2 o 3 +0.025Tm 2 o 3 +0.005Ho 2 o 3 =BaLa 0.94 T m 0.05 Ho 0.01 Ga 3 o 7 +CO 2 ↑

[0040] Formulated growth Tm according to stoichiometric ratio, Ho:BaLaGa 3 o 7 Crystal raw materials (where Ga 2 o 3 Excess 1wt.%). The prepared raw materials are placed in a platinum crucible and sintered at 950°C for 10 hours, then the sintered raw materials are ground, compacted, and then placed in a platinum crucible, sintered in a muffle furnace at 1010°C for 10 hours, and Tm is synthesized by solid state reaction. , Ho:BaLaGa 3 o 7 polycrystalline material. Put Tm, Ho: BaLaGa 3 o 7 The polycrystalline material is placed in the iridium crucible, the single crystal furnace is...

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Abstract

A thulium holmium co-doped barium lanthanum gallate laser crystal, manufacturing method and application thereof, the chemical formula of the crystal is: Tm, Ho: BaLaGa 3 o 7 , belonging to the tetragonal crystal system, the space group is The crystals are based on BaCO 3 , La 2 o 3 , Ga 2 o 3 , Tm 2 o 3 and Ho 2 o 3 The raw material is grown according to the pulling method, and the crystal is used in a solid-state laser as a laser working substance, and a laser diode or a Ti:sapphire laser is used as a pump source to generate continuous, tunable and ultrashort pulse laser output in the 2μm band. Thereby realizing 2μm band laser emission.

Description

technical field [0001] The invention relates to the field of ultrafast laser crystal materials, in particular to a thulium holmium co-doped barium lanthanum gallate laser crystal, a manufacturing method and an application thereof. Background technique [0002] As an eye-safe laser, the 2μm band ultrashort pulse light source has shown more and more applications in the fields of medical treatment, laser remote sensing and lidar. 2μm laser, mainly by Tm 3+ or Ho 3+ The laser is directly excited to produce. Ho 3+ The laser is a quasi-three-level system consisting of 5 I 7 → 5 I 8 The 2.0μm band laser produced by the transition has unique advantages of large stimulated emission cross-section and long fluorescence lifetime. However, there is no suitable laser diode pump source at present, and Tm is often used 3+ The ion laser is resonantly pumped to achieve laser output. Using Tm 3+ and Ho 3+ Co-doped system, Tm 3+ ions as sensitizing ions, with the help of Tm 3+ cro...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B15/00H01S3/16
CPCC30B29/22C30B15/00H01S3/161H01S3/1616H01S3/1685
Inventor 张园园王旭平吕宪顺刘冰杨玉国魏磊
Owner NEW MATERIAL INST OF SHANDONG ACADEMY OF SCI
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