Semiconductor device and manufacturing method thereof, and electronic device

Abstract

The invention relates to a semiconductor device and a manufacturing method thereof, and an electronic device. The method comprises steps: S1, a semiconductor substrate is provided, and a plurality of mutually-spaced fins are formed on the semiconductor substrate; S2, a sacrificial layer is formed on the surface of each fin to cover the fin; S3, a method generated by in-situ steam is selected to form an oxide layer on the surface of the sacrificial layer, an in-situ steam generation oxidation process is executed at the same time, the sacrificial layer is converted into an oxide, and a gate oxide is formed on the surface of the fin. The method of the invention has the advantages that an atomic layer deposition or molecular layer deposition method is selected to form the sacrificial layer, and consumption and loss of the fins are reduced; good conformal property is provided by selecting the atomic layer deposition or molecular layer deposition method; and ISSG oxidation happens on the thin sacrificial layer SiN, the SiN is finally converted into SiO2, and oxidation of the fins does not happen.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, in order to improve the performance of the device, the size of integrated circuit devices needs to be continuously reduced. With the continuous reduction of the size of CMOS devices, the development of three-dimensional designs such as fin field effect transistors (FinFET) has been promoted. [0003] Compared with the existing planar transistors, the FinFET device has more superior performance in terms of channel control and reducing shallow channel effects; the planar gate structure is arranged above the channel, and the gate in the FinFET The fins are arranged around the fins, so static electricity can be controlled from three sides, and the performance in static electricity...

AI Technical Summary

Problems solved by technology

However, since oxygen is selected as the process atmosphere and needs to be carried out at high temperature, conventional thermal gate oxide or high-temperature oxidation (high-temperature oxidation, HTO) processes all lead to the consumption of fins, and the 3D structure of fins will aggravate the loss of fins as described above, such as figure 1 shown

Images