Microwave dielectric ceramic material doped with ReAlO3 and preparation method thereof.

A technology of microwave dielectric ceramics and formulations, applied in the field of electronic component materials, can solve the problems of system dielectric constant reduction and achieve the effects of promoting grain growth, performance improvement, and high dielectric constant

Inactive Publication Date: 2016-08-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

Based on the above reports, the direct use of BaNd 2 Ti 4 o 12 Crystalline ceramics use two-phase composites, and a large amount of second ...

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  • Microwave dielectric ceramic material doped with ReAlO3 and preparation method thereof.
  • Microwave dielectric ceramic material doped with ReAlO3 and preparation method thereof.
  • Microwave dielectric ceramic material doped with ReAlO3 and preparation method thereof.

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Embodiment

[0037] The invention provides a kind of adding ReAlO 3 (high temperature pre-fired) high-performance microwave-based dielectric ceramic material, the material formula is Ba 3.75 Nd 9.5 (Ti 1-x C x ) 18 o 54 +y wt%ReAlO 3 , C=MN, where x is the molar content ratio, 0.03≤x≤0.06; 2≤y≤9, y is in Ba 3.75 Nd 9.5 (Ti 1-x C x )18 o 54 Based on the addition of ReAlO 3 The mass percent content (ie y wt% represents every 100 grams of Ba 3.75 Nd 9.5 (Ti 1-x C x ) 18 o 54 Material added y grams of ReAlO 3 ); M represents Nb whose valence is higher than tetravalent, N represents another element (Zn, Mg, Ni, Co, Al) whose valence is lower than tetravalent and whose ionic radius is similar to Ti, M and N are substituted at the same time, Re is a common rare earth element (Re=Nd, Sm, La, Ce).

[0038] N is one of Zn, Co, Ni, Mg and Al. When MN is substituted at the same time, if N is Al, then the molar ratio N:M=1:1, if N is one of Zn, Co, Ni, Mg, then the total molar ratio...

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Abstract

The present invention provides a microwave dielectric ceramic material doped with ReAlO3 and a preparation method thereof. The material has a chemical formula of Ba3.75Nd9.5 (Ti1-xCx) 18O54+y wt%ReAlO3. C equals to MN; x represents molar concentration ratio; x satisfies the relation of 0.03<=x<=0.06; y satisfies the relation of 2<=y<= 9, and y is the mass percent content of ReAlO3 added to the Ba3.75Nd9.5 (Ti1-xCx) 18O54; M represents Nb with valence higher than tetravalence; N represents one element, selected from Zn, Co, Ni, Mg and Al, with valence lower than tetravalence and ionic radius similar to Ti; M and N substitute at the same time; and Re represents one of Nd, replace Sm, La, and Ce. A preparation method comprises: preparing ingredients; conducting ball milling and mixing; pre-sintering the two phases at 1100-1150 DEG C and 1450-1500 DEG C, and then sintering at 1400-1450 DEG C. The prepared material has high dielectric constant and adjustable frequency temperature coefficient and maintains high Q*F value; the formula does not contain Pb, Cd and other volatile or heavy metal, so as to significantly improve the performance; and the raw materials have sufficient domestic supply and low price, so as to make possible the low cost of the high performance microwave ceramics.

Description

technical field [0001] The invention relates to the field of electronic component materials, in particular to a Ba 3.75 Nd 9.5 Ti 18 o 54 , adding ReAlO pre-fired close to its sintering temperature 3 Phase microwave dielectric ceramic material and preparation method thereof. Background technique [0002] With the development of wireless communication technology in the direction of miniaturization and civilian use, and according to the specific needs of Internet of Things technology in daily life, the combination of the two produces radio frequency identification (RFID). This technology is not only one of the core technologies of the sensing layer of the Internet of Things, but also a wireless communication technology. Its system consists of readers, antennas and electronic tags. Generally speaking, whether it is an antenna or a tag, it is often necessary to use microwave dielectric ceramics with a dielectric constant greater than 60. Therefore, microwave dielectric cer...

Claims

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Application Information

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IPC IPC(8): C04B35/50C04B35/622
CPCC04B35/50C04B35/622C04B2235/3206C04B2235/3215C04B2235/3217C04B2235/3222C04B2235/3224C04B2235/3227C04B2235/3229C04B2235/3232C04B2235/3251C04B2235/3275C04B2235/3279C04B2235/3284C04B2235/602C04B2235/96
Inventor 唐斌陈鹤拓熊喆钟朝位张树人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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